Annealing Effects on ZrO2 Thin Films: Characterization and Gas Sensing Applications

Submitting author affiliation:
UNAM, Ensenada, Mexico

Beilstein Arch. 2024, 202450. https://doi.org/10.3762/bxiv.2024.50.v1

Published 22 Jul 2024

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Abstract

This study investigates the effects of annealing on the structural, optical, and gas-sensing properties of ZrO2 thin films deposited by atomic layer deposition (ALD). The films were annealed in a nitrogen atmosphere at 700, 800, and 900 °C. Surface morphology, chemical composition, optical properties, and the film´s response to O2 were evaluated. Results showed that annealing improves surface homogeneity and oxygen sensitivity, highlighting the role of oxygen vacancies in gas sensing efficiency. Photoluminescence and cathodoluminescence spectra revealed that specific color centers, such as oxygen vacancies with trapped electrons, enhance the ZrO2 surface's sensitivity to oxygen. These findings emphasize the relationship between defect structures and material performance in gas sensing applications, offering insights for optimizing ZrO2-based sensors.

Keywords: ZrO2 films; ALD films; Annealing; Thin film sensors; Optical properties

How to Cite

When a peer-reviewed version of this preprint is available, this information will be updated in the information box above. If no peer-reviewed version is available, please cite this preprint using the following information:

Bohórquez, C.; Vazquez-Arce, J. L.; Cuentas-Gallegos, A. K.; Tiznado, H. Beilstein Arch. 2024, 202450. doi:10.3762/bxiv.2024.50.v1

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