Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

Scholarly Works

• Gao, S.; Ju, C.; Nie, G.; Liu, J.; Chen, W. Indentation response characteristics of a piezoelectric semiconductor layer. International Journal of Mechanical Sciences 2024, 109809. doi:10.1016/j.ijmecsci.2024.109809
• Guo, X.; Wang, Y.; Xu, C.; Wei, Z.; Ding, C. Influence of Homo- and Hetero-Junctions on the Propagation Characteristics of Love Waves in a Piezoelectric Semiconductor Semi-Infinite Medium. Mathematics 2024, 12, 1075. doi:10.3390/math12071075
• Liujx, J.; Gao, S.; Ju, C.; Nie, G.; Chen, W. Response Characteristics of a Piezoelectric Semiconductor Layer Under a Rigid Spherical Indenter. Elsevier BV 2024. doi:10.2139/ssrn.4832650
• Xiao, Z.; Li, S.; Zhang, C. Analysis of Piezoelectric Semiconductor Structures Considering Both Physical and Geometric Nonlinearities. Acta Mechanica Solida Sinica 2023, 37, 72–81. doi:10.1007/s10338-023-00448-2
• Xu, C.; Wei, P.; Wei, Z.; Guo, X. Shear horizontal wave in a p-type Si substrate covered with a piezoelectric semiconductor n-type ZnO layer with consideration of PN heterojunction effects. Acta Mechanica 2023, 235, 735–750. doi:10.1007/s00707-023-03771-4
• Xu, C.; Wei, P.; Wei, Z.; Guo, X. Rayleigh wave in layered piezoelectric semiconductor with consideration of PN junction effects. Mathematics and Mechanics of Solids 2022, 28, 1817–1833. doi:10.1177/10812865221133742
• Xu, C.; Wei, P.; Wei, Z.; Guo, X. Shear horizontal wave in a piezoelectric semiconductor substrate covered with a metal layer with consideration of Schottky junction effects. Applied Mathematical Modelling 2022, 109, 509–518. doi:10.1016/j.apm.2022.05.004
• Yang, W.; Wang, Y.; Hu, Y. A Tuning Mode of Asymmetric Deformations on the Electric Characteristics of Piezoelectric PN Junctions. International Journal of Applied Mechanics 2022, 14. doi:10.1142/s1758825122500351
• Yang, W.; Liang, Y. Typical transient effects in a piezoelectric semiconductor nanofiber under a suddenly applied axial time-dependent force. Applied Mathematics and Mechanics 2021, 42, 1095–1108. doi:10.1007/s10483-021-2761-9
• Yang, W.; Liu, J.; Hu, Y. Mechanical tuning methodology on the barrier configuration near a piezoelectric PN interface and the regulation mechanism on I–V characteristics of the junction. Nano Energy 2021, 81, 105581. doi:10.1016/j.nanoen.2020.105581
• Yang, W.; Liu, J.; Xu, Y.; Yuantai, H. A full-coupling model of PN junctions based on the global-domain carrier motions with inclusion of the two metal/semiconductor contacts at endpoints. Applied Mathematics and Mechanics 2020, 41, 845–858. doi:10.1007/s10483-020-2617-9

Explore citations to this article at