Cite the Following Article
Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES
Markus Tautz, Maren T. Kuchenbrod, Joachim Hertkorn, Robert Weinberger, Martin Welzel, Arno Pfitzner and David Díaz Díaz
Beilstein J. Nanotechnol. 2020, 11, 41–50.
https://doi.org/10.3762/bjnano.11.4
How to Cite
Tautz, M.; Kuchenbrod, M. T.; Hertkorn, J.; Weinberger, R.; Welzel, M.; Pfitzner, A.; Díaz Díaz, D. Beilstein J. Nanotechnol. 2020, 11, 41–50. doi:10.3762/bjnano.11.4
Download Citation
Citation data can be downloaded as file using the "Download" button or used for copy/paste from the text window
below.
Citation data in RIS format can be imported by all major citation management software, including EndNote,
ProCite, RefWorks, and Zotero.
Presentation Graphic
Picture with graphical abstract, title and authors for social media postings and presentations. | ||
Format: PNG | Size: 476.7 KB | Download |
Citations to This Article
Up to 20 of the most recent references are displayed here.
Scholarly Works
- Kolenda, M.; Kadys, A.; Malinauskas, T.; Radiunas, E.; Ritasalo, R.; Tomašiūnas, R. The importance of nucleation layer for the GaN N-face purity on the annealed Al2O3 layers deposited by atomic layer deposition. Materials Science and Engineering: B 2022, 284, 115850. doi:10.1016/j.mseb.2022.115850
- Alias, E. A.; Ibrahim, N.; Chanlek, N.; Md Taib, M. I.; Yusuf, Y.; Zainal, N. Effect of annealing temperature and ambience on roughened GaN substrate. Materials Science in Semiconductor Processing 2022, 148, 106777. doi:10.1016/j.mssp.2022.106777
- Tautz, M.; Díaz Díaz, D. Neue Wege: LED effizienter machen. Nachrichten aus der Chemie 2022, 70, 69–71. doi:10.1002/nadc.20224102342
- Alias, E. A.; Ibrahim, N.; DenBaars, S. P.; Chanlek, N.; Taib, M. I. M.; Zainal, N. Improving backside (N-face) GaN substrate roughening by pre-annealing for GaN-on-GaN LED. Optical Materials 2021, 121, 111570. doi:10.1016/j.optmat.2021.111570
- Alias, E. A.; Samsudin, M.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.; Zainal, N. N-face GaN substrate roughening for improved performance GaN-on-GaN LED. Microelectronics International 2021, 38, 93–98. doi:10.1108/mi-02-2021-0011
- Tautz, M.; Weimar, A.; Graßl, C.; Welzel, M.; Díaz, D. D. Anisotropy and Mechanistic Elucidation of Wet-Chemical Gallium Nitride Etching at the Atomic Level. physica status solidi (a) 2020, 217, 2000221. doi:10.1002/pssa.202000221