Cite the Following Article
Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires
Elena I. Monaico, Eduard V. Monaico, Veaceslav V. Ursaki, Shashank Honnali, Vitalie Postolache, Karin Leistner, Kornelius Nielsch and Ion M. Tiginyanu
Beilstein J. Nanotechnol. 2020, 11, 966–975.
https://doi.org/10.3762/bjnano.11.81
How to Cite
Monaico, E. I.; Monaico, E. V.; Ursaki, V. V.; Honnali, S.; Postolache, V.; Leistner, K.; Nielsch, K.; Tiginyanu, I. M. Beilstein J. Nanotechnol. 2020, 11, 966–975. doi:10.3762/bjnano.11.81
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- MONAICO, E. V. MICRO- AND NANO-ENGINEERING OF SEMICONDUCTOR COMPOUNDS AND METAL STRUCTURES BASED ON ELECTROCHEMICAL TECHNOLOGIES. Annals of the Academy of Romanian Scientists Series on Physics and Chemistry 2024, 9, 85–107. doi:10.56082/annalsarsciphyschem.2024.1.85
- Tiginyanu, I. M.; Monaico, E. V. Self-organized porous semiconductor compounds. Encyclopedia of Condensed Matter Physics; Elsevier, 2024; pp 350–374. doi:10.1016/b978-0-323-90800-9.00105-0
- Suchikova, Y.; Bohdanov, I.; Kovachov, S.; Lazarenko, A.; Popov, A. A.; Tsebriienko, T.; Karipbayev, Z.; Popov, A. I. Formation mechanism of chained and crystallographically oriented pores on n-InP surfaces. Applied Nanoscience 2023, 14, 231–239. doi:10.1007/s13204-023-02973-5
- Suchikova, Y.; Kovachov, S.; Karipbaev, Z.; Zhydachevskyy, Y.; Lysak, A.; Popov, A. I. Express Technology of Electrochemical Etching of Gallium Arsenide for the Formation of Massive Island Pores. In 2023 IEEE 4th KhPI Week on Advanced Technology (KhPIWeek), IEEE, 2023; pp 1–5. doi:10.1109/khpiweek61412.2023.10312896
- Ramle, M. R.; Radzali, R.; Abd Rahim, A. F.; Mahmood, A.; Abu Bakar, A.; Mohd Daud, A. N.; Abdullah, M. H. Study of Porous III-V Surface Structure via Etching Process: Effect of Pore Depth. Key Engineering Materials 2023, 946, 87–92. doi:10.4028/p-v731ho
- Monaico, E. V.; Monaico, E. I.; Ursaki, V. V.; Tiginyanu, I. M. Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications. physica status solidi (RRL) – Rapid Research Letters 2023, 17. doi:10.1002/pssr.202300039
- Dikusar, A.; Cuharuc, A.; Tsyntsaru, N. Input of Moldova in shaping modern electrochemical science and technology. Journal of Solid State Electrochemistry 2023, 27, 1661–1673. doi:10.1007/s10008-023-05428-7
- Moise, C. C.; Mihai, G. V.; Anicăi, L.; Monaico, E. V.; Ursaki, V. V.; Enăchescu, M.; Tiginyanu, I. M. Electrochemical Deposition of Ferromagnetic Ni Nanoparticles in InP Nanotemplates Fabricated by Anodic Etching Using Environmentally Friendly Electrolyte. Nanomaterials (Basel, Switzerland) 2022, 12, 3787. doi:10.3390/nano12213787
- Suchikova, Y.; Kovachov, S.; Bohdanov, I. Formation of oxide crystallites on the porous GaAs surface by electrochemical deposition. Nanomaterials and Nanotechnology 2022, 12, 184798042211273. doi:10.1177/18479804221127307
- Monaico, E. V.; Morari, V.; Kutuzau, M.; Ursaki, V. V.; Nielsch, K.; Tiginyanu, I. M. Magnetic Properties of GaAs/NiFe Coaxial Core-Shell Structures. Materials (Basel, Switzerland) 2022, 15, 6262. doi:10.3390/ma15186262
- Ursaki, V. V.; Lehmann, S.; Zalamai, V. V.; Morari, V.; Nielsch, K.; Tiginyanu, I. M.; Monaico, E. V. Core–Shell Structures Prepared by Atomic Layer Deposition on GaAs Nanowires. Crystals 2022, 12, 1145. doi:10.3390/cryst12081145
- Monaico, E. V.; Morari, V.; Ursaki, V. V.; Nielsch, K.; Tiginyanu, I. M. Core-Shell GaAs-Fe Nanowire Arrays: Fabrication Using Electrochemical Etching and Deposition and Study of Their Magnetic Properties. Nanomaterials (Basel, Switzerland) 2022, 12, 1506. doi:10.3390/nano12091506
- Suchikova, Y.; Lazarenko, A.; Kovachov, S.; Usseinov, A.; Karipbaev, Z.; Popov, A. I. Formation of porous Ga<sub>2</sub>O<sub>3</sub>/GaAs layers for electronic devices. In 2022 IEEE 16th International Conference on Advanced Trends in Radioelectronics, Telecommunications and Computer Engineering (TCSET), IEEE, 2022; pp 1–4. doi:10.1109/tcset55632.2022.9766890
- Monaico, E. V.; Busuioc, S.; Tiginyanu, I. M. Controlling the Degree of Hydrophilicity/Hydrophobicity of Semiconductor Surfaces via Porosification and Metal Deposition. IFMBE Proceedings; Springer International Publishing, 2022; pp 62–69. doi:10.1007/978-3-030-92328-0_9
- Monaico, E. I.; Monaico, E. V.; Ursaki, V.; Tiginyanu, I. Evolution of Pore Growth in GaAs in Transitory Anodization Regime from One Applied Voltage to Another. Surface Engineering and Applied Electrochemistry 2021, 57, 165–172. doi:10.3103/s106837552102006x