Supporting Information
Supporting Information File 1 contains additional figures with an example of Raman maps, the Si mode as a function of the laser power, a comparison between two microscope objectives, other intensity references, atomic force microscopy images, and details of the 2D growth toy model. Supporting Information File 2 is a recording of the growth simulation.
Supporting Information File 1: Additional experimental data. | ||
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Supporting Information File 2: Recording of the growth simulation. | ||
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Cite the Following Article
Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS2 thin films with domains much smaller than the laser spot size
Felipe Wasem Klein, Jean-Roch Huntzinger, Vincent Astié, Damien Voiry, Romain Parret, Houssine Makhlouf, Sandrine Juillaguet, Jean-Manuel Decams, Sylvie Contreras, Périne Landois, Ahmed-Azmi Zahab, Jean-Louis Sauvajol and Matthieu Paillet
Beilstein J. Nanotechnol. 2024, 15, 279–296.
https://doi.org/10.3762/bjnano.15.26
How to Cite
Wasem Klein, F.; Huntzinger, J.-R.; Astié, V.; Voiry, D.; Parret, R.; Makhlouf, H.; Juillaguet, S.; Decams, J.-M.; Contreras, S.; Landois, P.; Zahab, A.-A.; Sauvajol, J.-L.; Paillet, M. Beilstein J. Nanotechnol. 2024, 15, 279–296. doi:10.3762/bjnano.15.26
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Scholarly Works
- Astié, V.; Wasem Klein, F.; Makhlouf, H.; Paillet, M.; Huntzinger, J.-R.; Sauvajol, J.-L.; Zahab, A.-A.; Juillaguet, S.; Contreras, S.; Voiry, D.; Landois, P.; Decams, J.-M. Direct liquid injection pulsed-pressure MOCVD of large area MoS2 on Si/SiO2. Physical chemistry chemical physics : PCCP 2024, 26, 25772–25779. doi:10.1039/d4cp00603h