Supporting Information
The Supporting Information contains three sections. Section S1 provides more detailed information on the sidewall modification simulation, section S2 addresses the influence of the electron current on FEBIE, and section S3 discusses the influence of the gas flux on FEBIE.
| Supporting Information File 1: Additional experimental data. | ||
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Cite the Following Article
Sidewall angle tuning in focused electron beam-induced processing
Sangeetha Hari, Willem F. van Dorp, Johannes J. L. Mulders, Piet H. F. Trompenaars, Pieter Kruit and Cornelis W. Hagen
Beilstein J. Nanotechnol. 2024, 15, 447–456.
https://doi.org/10.3762/bjnano.15.40
How to Cite
Hari, S.; van Dorp, W. F.; Mulders, J. J. L.; Trompenaars, P. H. F.; Kruit, P.; Hagen, C. W. Beilstein J. Nanotechnol. 2024, 15, 447–456. doi:10.3762/bjnano.15.40
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