Supporting Information
The Supporting Information contains 1) ID–VDS and ID–VG plots of different functionalization steps, 2) ID–VG plots comparing the response to cDNA and ncDNA in channel-exposed FETs, 3) the variation in the conductance response of channel and junction exposed devices with L and 4) plots of Δφ and K variation with L in the linear and near-threshold regimes for the reverse sweep.
| Supporting Information File 1: Additional experimental data. | ||
| Format: PDF | Size: 299.6 KB | Download |
Cite the Following Article
Effect of channel length on the electrical response of carbon nanotube field-effect transistors to deoxyribonucleic acid hybridization
Hari Krishna Salila Vijayalal Mohan, Jianing An, Yani Zhang, Chee How Wong and Lianxi Zheng
Beilstein J. Nanotechnol. 2014, 5, 2081–2091.
https://doi.org/10.3762/bjnano.5.217
How to Cite
Salila Vijayalal Mohan, H. K.; An, J.; Zhang, Y.; Wong, C. H.; Zheng, L. Beilstein J. Nanotechnol. 2014, 5, 2081–2091. doi:10.3762/bjnano.5.217
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