Carrier multiplication in silicon nanocrystals: ab initio results

Scholarly Works

• Marri, I.; Grillo, S.; Amato, M.; Ossicini, S.; Pulci, O. Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core-Shell Nanocrystals. The journal of physical chemistry. C, Nanomaterials and interfaces 2023, 127, 1209–1219. doi:10.1021/acs.jpcc.2c07024
• Marri, I.; Ossicini, S. Multiple exciton generation in isolated and interacting silicon nanocrystals. Nanoscale 2021, 13, 12119–12142. doi:10.1039/d1nr01747k
• Ossicini, S.; Marri, I.; Amato, M.; Palummo, M.; Canadell, E.; Rurali, R. Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase. Faraday discussions 2020, 222, 217–239. doi:10.1039/c9fd00085b
• Marri, I.; Amato, M.; Guerra, R.; Ossicini, S. First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications. physica status solidi (b) 2018, 255, 1700627. doi:10.1002/pssb.201700627
• Marri, I.; Ossicini, S. First-Principle Investigations of Carrier Multiplication in Si Nanocrystals: a Short Review. In AIP Conference Proceedings, Author(s), 2018; pp 020002 ff. doi:10.1063/1.5047756
• Bertocchi, M.; Amato, M.; Marri, I.; Ossicini, S. Tuning the Work Function of Si(100) Surface by Halogen Absorption: A DFT Study. physica status solidi c 2017, 14, 1700193. doi:10.1002/pssc.201700193
• Marri, I.; Degoli, E.; Ossicini, S. Doped and codoped silicon nanocrystals: The role of surfaces and interfaces. Progress in Surface Science 2017, 92, 375–408. doi:10.1016/j.progsurf.2017.07.003
• Marri, I.; Govoni, M.; Ossicini, S. Carrier Multiplication in Silicon Nanocrystals: Theoretical Methodologies and Role of the Passivation. physica status solidi c 2017, 14, 1700198. doi:10.1002/pssc.201700198
• Mazzaro, R.; Romano, F.; Ceroni, P. Long-lived luminescence of silicon nanocrystals: from principles to applications. Physical chemistry chemical physics : PCCP 2017, 19, 26507–26526. doi:10.1039/c7cp05208a
• Gert, A. V.; Nestoklon, M.; Prokofiev, A. A.; Yassievich, I. Tight-binding simulation of silicon and germanium nanocrystals. Semiconductors 2017, 51, 1274–1289. doi:10.1134/s1063782617100098
• Marri, I.; Degoli, E.; Ossicini, S. First Principle Studies of B and P Doped Si Nanocrystals. physica status solidi (a) 2017, 215, 1700414. doi:10.1002/pssa.201700414
• Kryjevski, A.; Gifford, B. J.; Kilina, S.; Kilin, D. S. Theoretical predictions on efficiency of bi-exciton formation and dissociation in chiral carbon nanotubes. The Journal of chemical physics 2016, 145, 154112. doi:10.1063/1.4963735
• Ossicinia, S.; Govonia, b. M.; Guerraa, R.; Marria, I. Silicon Nanophotonics: Basic Principles, Present Status, and Perspectives, 2nd Ed - Chapter 2 Silicon Nanocrystals for Photonics and Photovoltaics: Ab initio Results. Silicon Nanophotonics: Basic Principles, Present Status, and Perspectives, 2nd Ed; Pan Stanford Publishing Pte. Ltd., 2016; pp 27–60. doi:10.1201/9781315364797-3
• Marri, I.; Govoni, M.; Ossicini, S. First-principles calculations of electronic coupling effects in silicon nanocrystals: Influence on near band-edge states and on carrier multiplication processes. Solar Energy Materials and Solar Cells 2016, 145, 162–169. doi:10.1016/j.solmat.2015.07.013
• Kryjevski, A.; Kilin, D. Enhanced multiple exciton generation in amorphous silicon nanowires and films. Molecular Physics 2015, 1–15. doi:10.1080/00268976.2015.1076580
• Kryjevski, A.; Kilin, D. S. Enhanced multiple exciton generation in amorphous silicon nanowires and films. Molecular Physics 2015, 114, 365–379.
• ́nek, P. M. ́ F. T. Excited-State Relaxation in Group IV Nanocrystals Investigated Using Optical Methods. Nanotechnology and Photovoltaic Devices; Jenny Stanford Publishing, 2015; pp 159–190. doi:10.1201/b18090-7

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