Cite the Following Article
Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography
Siti Noorhaniah Yusoh and Khatijah Aisha Yaacob
Beilstein J. Nanotechnol. 2016, 7, 1461–1470.
https://doi.org/10.3762/bjnano.7.138
How to Cite
Yusoh, S. N.; Yaacob, K. A. Beilstein J. Nanotechnol. 2016, 7, 1461–1470. doi:10.3762/bjnano.7.138
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- Abdullah, A. M.; Yaacob, K. A.; Lockman, Z.; Hutagalung, S. D. Important Parameter Related to AFM Lithography for Fabrication of Silicon Nanowires. Lecture Notes in Mechanical Engineering; Springer Singapore, 2019; pp 239–253. doi:10.1007/978-981-15-0002-2_25
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- Lu, Z.; Yuan, G.; Wang, Q.; Kechao, W.; Ruiwei, W.; Liu, Z.; Li, J.; Wang, J. Effects of etching conditions on surface morphology of periodic inverted trapezoidal patterned Si(100) substrate. Optoelectronics Letters 2017, 13, 45–49. doi:10.1007/s11801-017-6242-3
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