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Cite the Following Article
Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride
Daniel Hiller, Julian López-Vidrier, Keita Nomoto, Michael Wahl, Wolfgang Bock, Tomáš Chlouba, František Trojánek, Sebastian Gutsch, Margit Zacharias, Dirk König, Petr Malý and Michael Kopnarski
Beilstein J. Nanotechnol. 2018, 9, 1501–1511.
https://doi.org/10.3762/bjnano.9.141
How to Cite
Hiller, D.; López-Vidrier, J.; Nomoto, K.; Wahl, M.; Bock, W.; Chlouba, T.; Trojánek, F.; Gutsch, S.; Zacharias, M.; König, D.; Malý, P.; Kopnarski, M. Beilstein J. Nanotechnol. 2018, 9, 1501–1511. doi:10.3762/bjnano.9.141
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Scholarly Works
- Perego, M.; Pulici, A.; Kuschlan, S.; Seguini, G.; Taglietti, F.; Fanciulli, M.; Chiarcos, R.; Laus, M. Phosphorus Deactivation and Electron Mobility Enhancement in Ultrathin Silicon Nanosheets. In 2023 Silicon Nanoelectronics Workshop (SNW), IEEE, 2023; pp 77–78. doi:10.23919/snw57900.2023.10183976
- Hiller, D.; König, D.; Nagel, P.; Merz, M.; Schuppler, S.; Smith, S. C. On the Location of Boron in SiO 2 ‐Embedded Si Nanocrystals—An X‐ray Absorption Spectroscopy and Density Functional Theory Study. physica status solidi (b) 2021, 258, 2000623. doi:10.1002/pssb.202000623
- König, D.; Frentzen, M.; Wilck, N.; Berghoff, B.; Píš, I.; Nappini, S.; Bondino, F.; Müller, M.; Gonzalez, S.; Di Santo, G.; Petaccia, L.; Mayer, J.; Smith, S. C.; Knoch, J. Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO2 Coating. ACS applied materials & interfaces 2021, 13, 20479–20488. doi:10.1021/acsami.0c22360
- Perego, M.; Seguini, G.; Mascheroni, E.; Arduca, E.; Gianotti, V.; Laus, M. Doping of silicon with phosphorus end-terminated polymers: source characterization and dopant diffusion in SiO2. Journal of Materials Chemistry C 2021, 9, 4020–4028. doi:10.1039/d0tc06015a
- König, D.; Wilck, N.; Hiller, D.; Berghoff, B.; Meledin, A.; Di Santo, G.; Petaccia, L.; Mayer, J.; Smith, S. C.; Knoch, J. Electronic Structure Shift of Deeply Nanoscale Silicon by Si O 2 versus Si 3 N 4 Embedding as an Alternative to Impurity Doping. Physical Review Applied 2019, 12, 054050. doi:10.1103/physrevapplied.12.054050
- Popelář, T.; Ondič, L.; Pelant, I.; Kůsová, K.; Hiller, D. Energy transfer channel between silicon nanocrystals and an optical center emitting above their bandgap. Journal of Luminescence 2019, 215, 116685. doi:10.1016/j.jlumin.2019.116685
- Limpens, R.; Sugimoto, H.; Neale, N. R.; Fujii, M. Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy. ACS Photonics 2018, 5, 4037–4045. doi:10.1021/acsphotonics.8b00671
