Supporting Information
Comprehensive Hall effect analysis data and ECV of annealing variation experiments on bulk silicon.
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Cite the Following Article
Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates
Noel Kennedy, Ray Duffy, Luke Eaton, Dan O’Connell, Scott Monaghan, Shane Garvey, James Connolly, Chris Hatem, Justin D. Holmes and Brenda Long
Beilstein J. Nanotechnol. 2018, 9, 2106–2113.
https://doi.org/10.3762/bjnano.9.199
How to Cite
Kennedy, N.; Duffy, R.; Eaton, L.; O’Connell, D.; Monaghan, S.; Garvey, S.; Connolly, J.; Hatem, C.; Holmes, J. D.; Long, B. Beilstein J. Nanotechnol. 2018, 9, 2106–2113. doi:10.3762/bjnano.9.199
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- Sgarbossa, F.; Levarato, A.; Carturan, S.; Rizzi, G. A.; Tubaro, C.; Ciatto, G.; Bondino, F.; Píš, I.; Napolitani, E.; De Salvador, D. Phosphorus precursors reactivity versus hydrogenated Ge surface: towards a reliable self-limited monolayer doping. Applied Surface Science 2021, 541, 148532. doi:10.1016/j.apsusc.2020.148532
- Bai, R.; Du, Y.; Xu, A.; Hu, Y.; Erickson, J. R.; Hui, L.; Chen, J.; Xiong, F.; Liu, H. DNA‐Based Strategies for Site‐Specific Doping. Advanced Functional Materials 2020, 31, 2005940. doi:10.1002/adfm.202005940
- Kennedy, N.; Garvey, S.; Maccioni, B.; Eaton, L.; Nolan, M.; Duffy, R.; Meaney, F.; Kennedy, M. A.; Holmes, J. D.; Long, B. Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation. Langmuir : the ACS journal of surfaces and colloids 2020, 36, 9993–10002. doi:10.1021/acs.langmuir.0c00408
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- MacHale, J.; Meaney, F.; Kennedy, N.; Eaton, L.; Mirabelli, G.; White, M.; Thomas, K.; Pelucchi, E.; Petersen, D. H.; Lin, R.; Petkov, N.; Connolly, J. P.; Hatem, C.; Gity, F.; Ansari, L.; Long, B.; Duffy, R. Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nm. Journal of Applied Physics 2019, 125, 225709. doi:10.1063/1.5098307
- Wang, K.; Wang, H.; Zhang, M.; Liu, Y.; Zhao, W. Electronic and magnetic properties of doped black phosphorene with concentration dependence. Beilstein journal of nanotechnology 2019, 10, 993–1001. doi:10.3762/bjnano.10.100
- MacHale, J.; Meaney, F.; Sheehan, B.; Duffy, R.; Kennedy, N.; Long, B. Electrical Evaluation of Ion Implant, Liquid, and Gas Sources for Doping of Ultra-Thin Body SOI and Si Nanowire Structures. In 2018 22nd International Conference on Ion Implantation Technology (IIT), IEEE, 2018; pp 82–85. doi:10.1109/iit.2018.8807918
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