Supporting Information
Supporting Information features the comparison of h-DFT results to experimental data, further information on the interface impact on Si nanocrystal electronic structure and its connection to quantum-chemical nature of N and O, details of UPS scans with further reference data, the derivation of charge carrier densities for nonequilibrium Green’s function (NEGF) transport simulation of undoped Si-nanowire MISFET devices and details on NEGF device simulations.
| Supporting Information File 1: Further discussion and data of h-DFT, UPS, and NEGF simulations. | ||
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Cite the Following Article
Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating
Dirk König, Daniel Hiller, Noël Wilck, Birger Berghoff, Merlin Müller, Sangeeta Thakur, Giovanni Di Santo, Luca Petaccia, Joachim Mayer, Sean Smith and Joachim Knoch
Beilstein J. Nanotechnol. 2018, 9, 2255–2264.
https://doi.org/10.3762/bjnano.9.210
How to Cite
König, D.; Hiller, D.; Wilck, N.; Berghoff, B.; Müller, M.; Thakur, S.; Di Santo, G.; Petaccia, L.; Mayer, J.; Smith, S.; Knoch, J. Beilstein J. Nanotechnol. 2018, 9, 2255–2264. doi:10.3762/bjnano.9.210
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Scholarly Works
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- Knoch, J.; Richstein, B.; Han, Y.; Frentzen, M.; Rainer Schreiber, L.; Klos, J.; Raffauf, L.; Wilck, N.; König, D.; Zhao, Q.-T. Toward Low‐Power Cryogenic Metal‐Oxide Semiconductor Field‐Effect Transistors. physica status solidi (a) 2023, 220. doi:10.1002/pssa.202300069
- König, D.; Frentzen, M.; Hiller, D.; Wilck, N.; Santo, G. D.; Petaccia, L.; Píš, I.; Bondino, F.; Magnano, E.; Mayer, J.; Knoch, J.; Smith, S. C. Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures. Advanced Physics Research 2023, 2. doi:10.1002/apxr.202200065
- König, D.; Smith, S. C. Analytic description of nanowires II: morphing of regular cross sections for zincblende- and diamond-structures to match arbitrary shapes. Acta crystallographica Section B, Structural science, crystal engineering and materials 2022, 78, 643–664. doi:10.1107/s2052520622004942
- König, D.; Hiller, D.; Smith, S. C. Absorption and Photoluminescence of Silicon Nanocrystals Investigated by Excited State DFT: Role of Embedding Dielectric and Defects. physica status solidi (b) 2022, 259. doi:10.1002/pssb.202100549
- Hiller, D.; König, D.; Nagel, P.; Merz, M.; Schuppler, S.; Smith, S. C. On the Location of Boron in SiO 2 ‐Embedded Si Nanocrystals—An X‐ray Absorption Spectroscopy and Density Functional Theory Study. physica status solidi (b) 2021, 258, 2000623. doi:10.1002/pssb.202000623
- König, D.; Frentzen, M.; Wilck, N.; Berghoff, B.; Píš, I.; Nappini, S.; Bondino, F.; Müller, M.; Gonzalez, S.; Di Santo, G.; Petaccia, L.; Mayer, J.; Smith, S. C.; Knoch, J. Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO2 Coating. ACS applied materials & interfaces 2021, 13, 20479–20488. doi:10.1021/acsami.0c22360
- König, D.; Tilley, R. D.; Smith, S. C. Design guidelines for transition metals as interstitial emitters in silicon nanocrystals to tune photoluminescence properties: zinc as biocompatible example. Nanoscale 2020, 12, 19340–19349. doi:10.1039/d0nr05156j
- Hiller, D.; Markevich, V. P.; De Guzman, J. A. T.; König, D.; Prucnal, S.; Bock, W.; Julin, J.; Peaker, A. R.; Macdonald, D.; Grant, N. E.; Murphy, J. D. Kinetics of Bulk Lifetime Degradation in Float-Zone Silicon: Fast Activation and Annihilation of Grown-In Defects and the Role of Hydrogen versus Light. physica status solidi (a) 2020, 217, 2000436. doi:10.1002/pssa.202000436
- König, D.; Yao, Y.; Puthen-Veettil, B.; Smith, S. C. Non-equilibrium dynamics, materials and structures for hot carrier solar cells: a detailed review. Semiconductor Science and Technology 2020, 35, 073002. doi:10.1088/1361-6641/ab8171
- Geck, L.; Kruth, A.; Bluhm, H.; van Waasen, S.; Heinen, S. Control electronics for semiconductor spin qubits. Quantum Science and Technology 2019, 5, 015004. doi:10.1088/2058-9565/ab5e07
- König, D.; Wilck, N.; Hiller, D.; Berghoff, B.; Meledin, A.; Di Santo, G.; Petaccia, L.; Mayer, J.; Smith, S. C.; Knoch, J. Electronic Structure Shift of Deeply Nanoscale Silicon by Si O 2 versus Si 3 N 4 Embedding as an Alternative to Impurity Doping. Physical Review Applied 2019, 12, 054050. doi:10.1103/physrevapplied.12.054050
- König, D.; Smith, S. C. Analytical description of nanowires. I. Regular cross sections for zincblende and diamond structures. Acta crystallographica Section B, Structural science, crystal engineering and materials 2019, 75, 788–802. doi:10.1107/s2052520619009351
- König, D.; Yao, Y.; Smith, S. C. Bridge- and Double-Bonded O and NH on Fully OH- and NH 2 -Terminated Silicon Nanocrystals: Ground and Excited State Properties. physica status solidi (b) 2019, 256, 1800336. doi:10.1002/pssb.201800336
- König, D.; Hiller, D.; Smith, S. C. SiO2 Modulation Doping for Si: Acceptor Candidates. Physical Review Applied 2018, 10, 054034. doi:10.1103/physrevapplied.10.054034
