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Beilstein J. Nanotechnol. 2017, 8, 539–546, doi:10.3762/bjnano.8.58
Figure 1: a) Glow-discharge peak intensity monitored in the region of 328–367 nm, an energy region in which w...
Figure 2: The color of the plasma corresponding to the six increasing values of the input flux described in Figure 1 ...
Figure 3: 3D plot constructed to optimize sputter deposition. Each point of the grid corresponds to a sample ...
Figure 4: Critical temperature Tc of NbN as a function of the N2 flux and of the of N2/Nb peak ratio. In the ...
Figure 5: Spectrum of the emission lines. Details of AlN for different values of N2 flux (starting from 0 and...
Figure 6: Resistivity of AlN film as a function of N2/Ar gas flux and Ar/N2 peak ratio. The rf power was fixe...
Figure 7: Film voltages as a function of the time obtained varying the current density and compliance voltage...
Figure 8: Optical microscopy images at 100× magnification of a) sample 1 in a) and b) sample 6. The upper par...
Figure 9: Scheme of the oxidized film grown on NbN. The total thickness of the oxide (TEXT + TINT) is higher ...
Figure 10: Auger electron spectroscopy of the initial NbN sample before and after anodization. A soft surface ...
Figure 11: a) Current–voltage characteristic for NbN Josephson junction and b) diffraction pattern obtained me...
Figure 12: A section of our samples indicating the layers of the fabrication steps and their relative thicknes...