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Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62
Figure 1: SEM images of the films surface prior to (left) and after exposure of the indicated area to an elec...
Figure 2: The C 1s peaks in high-resolution XPS spectra of as-grown films (left) and processed using the HT+R...
Figure 3: SEM and AFM images of the surface of the as-grown, 1×, 2×, and 3× samples, as well as topography pr...
Figure 4: (A) Diffractograms and (B) variations in crystallite sizes and dislocation density determined for a...
Figure 5: Raman spectra of as-grown (B), 2× (C), and 3× (D) CuO/Si structures along with that of a reference ...
Figure 6: (A) Exemplary maps (1 × 1 μm2) of the contact potential difference (VCPD) for each sample. (B) Summ...
Figure 7: The dC/dV signal maps of the analyzed samples with the SCM data and height profiles recorded along ...
Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60
Figure 1: Schematic images of final PV structures studied in this work: (a) SC with ZnONR, (b) planar SC.
Figure 2: Scanning electron microscopy images of zinc oxide nanorods on the silicon surface: (a) top view, (b...
Figure 3: SEM images of ZnO/Si solar cells: (a) modified with nanorods, (b) planar.
Figure 4: Surface morphology of (a, c) textured and (b, d) planar solar cells studied by SEM (top row) and AF...
Figure 5: (a) External quantum efficiency and (b) current voltage characteristics of ZnO/Si solar cells.
Figure 6: Current–voltage–temperature characteristics of (a) textured and (b) planar ZnO/Si solar cells.
Figure 7: Temperature dependence of basics solar cell parameters.
Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48
Figure 1: Detailed sequence of GaAs surface-processing steps before the application of the ALD process (the p...
Figure 2: The PV structure used in the experiment.
Figure 3: AFM (left panels), SEM top views (right panels), and cross-sections (insets) of A-type samples (the...
Figure 4: AFM (left panels), SEM top views (right panels), and cross-sections (insets) of B-type samples (the...
Figure 5: (a–h) A2 spectra after 58 (a–d) and 76 min (e–h) of sputtering. (i–p) B1 spectra after 35 (i–l) and...
Figure 6: (a) PL spectra (RT) of the samples of the A series. (b) PL spectra (RT) of the samples of the B ser...
Figure 7: Energy band diagram of the fabricated AZO/Al2O3/p-GaAs devices.
Figure 8: (a) EQE of sulfur-passivated samples (A series). (b) EQE of non-passivated samples (B series).
Figure 9: I–V characteristics of the measured samples of A series (a) and B series (b).