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Beilstein J. Nanotechnol. 2024, 15, 1153–1169, doi:10.3762/bjnano.15.94
Figure 1: Optoelectronic property investigation of a group IV–VI dichalcogenide monolayer (Ge2Se2), and its a...
Figure 2: Geometry and stability of Ge2Se2 monolayers. (a) Side view with the corresponding structural parame...
Figure 3: The electronic band structure of monolayer Ge2Se2, revealing a direct bandgap of 1.12 eV, and the c...
Figure 4: Macroscopic potential distribution vs lattice vector in the normal direction for monolayer Ge2Se2. ...
Figure 5: Optical responses of monolayer Ge2Se2; real (solid) and imaginary (dashed) part of the dielectric c...
Figure 6: Schematic of the proposed PSC using Ge2Se2 as HTL; (a) device setup consisting of stacked layers of...
Figure 7: PSC performance parameters as functions of (a) HTL thickness, (b) ETL thickness, (c) absorber thick...
Figure 8: Variation of PSC performance parameters with interface defects between (a) ETL and active layer, an...
Figure 9: (a) Current density vs voltage curve for the proposed PSC, demonstrating a short-circuit current de...
Figure 10: Computational pathway to estimate the materials’ behavior and application in a PSC. First step – DF...