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Beilstein J. Nanotechnol. 2014, 5, 1999–2006, doi:10.3762/bjnano.5.208
Figure 1: Schematic image of the two device layouts used: single face sample (SFS) and double face sample (DF...
Figure 2: TEM micrographs of CNTs dispersion spray obtained by means of: the ultrasonic atomizer a); the airb...
Figure 3: SEM image of the MWCNT film on a semi-insulating gallium arsenide substrate.
Figure 4: Dark-current–voltage characteristics for the SFS, DFS and ITO/GaAs/Ti/Au photodetector configuratio...
Figure 5: Absolute quantum efficiency trend in the visible light range, calculated at a bias voltage of −6 V ...
Figure 6: Absolute quantum efficiency trend in the UV range, calculated at a bias voltage of −6 V for the dev...
Figure 7: Responsivity trend of GaAs and CNTs based photodetectors.
Figure 8: Normalized photocurrent spectra measured at: (a) negative voltages, (b) positive voltages applied t...
Figure 9: Photocurrent as a function of the relative monochromatic light intensity at λ = 800 and 890 nm for ...