Analytical development and optimization of a graphene–solution interface capacitance model

• Hediyeh Karimi,
• Rasoul Rahmani,
• Reza Mashayekhi,
• Leyla Ranjbari,
• Amir H. Shirdel,
• Niloofar Haghighian,
• Parisa Movahedi,
• Moein Hadiyan and
• Razali Ismail

Beilstein J. Nanotechnol. 2014, 5, 603–609, doi:10.3762/bjnano.5.71

• -based devices, graphene with its outstanding properties such as consuming less energy and faster heat dissipating show a great promise in electrolyte-gated graphene field-effect transistors (EGFETs) [20]. An EGFET fabricated on a SiO2/Si substrate with gold source and drain electrodes and a graphene

Effect of contaminations and surface preparation on the work function of single layer MoS₂

• Oliver Ochedowski,
• Kolyo Marinov,
• Nils Scheuschner,
• Artur Poloczek,
• Benedict Kleine Bussmann,
• Janina Maultzsch and
• Marika Schleberger

Beilstein J. Nanotechnol. 2014, 5, 291–297, doi:10.3762/bjnano.5.32

• measurements were performed under ambient conditions using amplitude modulated KPFM, both having a great impact on the results. In this work we study the work function of SLM on a standard SiO2/Si substrate using non-contact atomic force microscopy (NC-AFM) and Kelvin probe force microscopy in situ. In our

Fabrication of carbon nanomembranes by helium ion beam lithography

• Xianghui Zhang,
• Henning Vieker,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2014, 5, 188–194, doi:10.3762/bjnano.5.20

• cross-linked SAM is transferred onto another substrate, e.g., SiO2/Si. Figure 1e demonstrates a successful transfer of structured CNMs in Chinese characters which means nanomembranes: the grey background is SiO2/Si substrate and the darker features are transferred CNMs. For the fabrication of

• been transferred onto a SiO2/Si substrate. Interestingly, the first step is the formation of circular shaped nuclei, which is analogous to the nucleation for thin films or polymer crystallization [23]. After a dose of 176 µC/cm2 (Figure 3a), the average diameter of the nuclei is 9.0 ± 1.7 nm, which

• were transferred onto another substrate for further investigations again with the HIM. For the transfer of NBPT CNMs onto a SiO2/Si substrate the samples were spin-coated with a layer of poly(methyl methacrylate) (PMMA) for stabilization and baked on a hotplate at 90 °C for 5 min. The separation of the

Ordered arrays of nanoporous gold nanoparticles

• Dong Wang,
• Ran Ji,
• Arne Albrecht and
• Peter Schaaf

Beilstein J. Nanotechnol. 2012, 3, 651–657, doi:10.3762/bjnano.3.74

• samples in a 65 wt % HNO3 solution at 21 °C for 5 min. A reference sample (15 nm Au/20 nm Ag bilayers on a flat SiO2/Si substrate) was processed by annealing at 900 °C in Ar for 15 min and then submerging in a 65 wt % HNO3 solution at 21 °C for 5 min. The SiO2 thickness of the reference sample is 100 nm

Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism

• Gregor Hlawacek,
• Vasilisa Veligura,
• Stefan Lorbek,
• Tijs F. Mocking,
• Antony George,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2012, 3, 507–512, doi:10.3762/bjnano.3.58

• surface layer of the relevant material (SiO2, PFS, or MS). As a consequence of the identical strip width for PFS and MS strips, we do not know a priori which stripe is which. However, we assign the bright structureless areas to the uncovered SiO2/Si substrate. It is understood that because of the

Formation of precise 2D Au particle arrays via thermally induced dewetting on pre-patterned substrates

• Dong Wang,
• Ran Ji and
• Peter Schaaf

Beilstein J. Nanotechnol. 2011, 2, 318–326, doi:10.3762/bjnano.2.37

• symmetry (substrate B). SEM images of induced particles on the flat SiO2/Si substrate after dewetting of the 5 nm (a) and 60 nm (b) thick Au films. (c) Histograms of particle size distributions produced by the dewetting of the 5 nm, 10 nm, 20 nm, 30 nm, 40 nm, and 60 nm thick Au films on the flat SiO2/Si

• substrate A have a spatial period of 513 nm and a depth of 150 nm. The holes in the substrate B have the same spatial period of 513 nm, a diameter of about 490 nm, and a depth of 120 nm. Figure 2 shows the SEM images of the Au particles formed from the 5 nm and 60 nm thick Au films on a flat SiO2/Si

• substrate. Usually, flat substrates lead to a broad distribution of particle size and spacing of the dewetted particles. Figure 2c shows the particle size distributions produced by dewetting of Au films with thicknesses from 5 nm to 60 nm on the flat substrates. Both, mean particle size and the width