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Search for "carrier recombination" in Full Text gives 32 result(s) in Beilstein Journal of Nanotechnology.

Two-dimensional carbon-based nanocomposites for photocatalytic energy generation and environmental remediation applications

  • Suneel Kumar,
  • Ashish Kumar,
  • Ashish Bahuguna,
  • Vipul Sharma and
  • Venkata Krishnan

Beilstein J. Nanotechnol. 2017, 8, 1571–1600, doi:10.3762/bjnano.8.159

Graphical Abstract
  • photogenerated charge carrier recombination and facilitate their transfer. As mentioned earlier, g-C3N4 was first investigated as a photocatalyst by Wang et al. [64] in 2009 for visible-light-based water splitting reactions to generate clean, renewable energy in the form of H2. They found and explained the
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Published 03 Aug 2017

High photocatalytic activity of Fe2O3/TiO2 nanocomposites prepared by photodeposition for degradation of 2,4-dichlorophenoxyacetic acid

  • Shu Chin Lee,
  • Hendrik O. Lintang and
  • Leny Yuliati

Beilstein J. Nanotechnol. 2017, 8, 915–926, doi:10.3762/bjnano.8.93

Graphical Abstract
  • of TiO2 is generally restricted by its high charge carrier recombination rate. Therefore, the modification of TiO2 in order to reduce such recombinations remains a critical task. Another important point is the emphasis on using an environmentally safe and sustainable material as the modifier. As one
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Published 24 Apr 2017

Tandem polymer solar cells: simulation and optimization through a multiscale scheme

  • Fanan Wei,
  • Ligang Yao,
  • Fei Lan,
  • Guangyong Li and
  • Lianqing Liu

Beilstein J. Nanotechnol. 2017, 8, 123–133, doi:10.3762/bjnano.8.13

Graphical Abstract
  • carrier recombination is the main cause of energy loss in organic solar cells, both the bimolecular and monomolecular recombination rate were evaluated (defined as in Equation 2 and Equation 3) and related to the domain size and electric field. A monomolecular recombination event was defined as the
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Published 12 Jan 2017

Influence of wide band gap oxide substrates on the photoelectrochemical properties and structural disorder of CdS nanoparticles grown by the successive ionic layer adsorption and reaction (SILAR) method

  • Mikalai V. Malashchonak,
  • Alexander V. Mazanik,
  • Olga V. Korolik,
  • Еugene А. Streltsov and
  • Anatoly I. Kulak

Beilstein J. Nanotechnol. 2015, 6, 2252–2262, doi:10.3762/bjnano.6.231

Graphical Abstract
  • absorption, whereas the IPCE decrease at larger N indicates the rising influence of nonequilibrium charge carrier recombination due to the increase of the distance which the photoelectrons must overcome to reach the substrate surface. The position of the maximum in the IPCE–N curves is noticeably different
  • , the CdS NPs grown on the TiO2 surface possess a minor degree of disorder as compared with the ZnO/CdS and In2O3/CdS heterostructures. Therefore, the charge carrier recombination slightly affects the photocurrent value in the TiO2/CdS system. On the contrary, in the case of the In2O3/CdS
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Published 30 Nov 2015

Current–voltage characteristics of manganite–titanite perovskite junctions

  • Benedikt Ifland,
  • Patrick Peretzki,
  • Birte Kressdorf,
  • Philipp Saring,
  • Andreas Kelling,
  • Michael Seibt and
  • Christian Jooss

Beilstein J. Nanotechnol. 2015, 6, 1467–1484, doi:10.3762/bjnano.6.152

Graphical Abstract
  • electrons, they cannot be easily transferred to solar cells made of oxides with strongly correlated electrons. Another reason to introduce a second diode is given by Giebink et al. [38][39]. They introduce a second diode in organic systems in order to take the voltage dependence of different charge carrier
  • recombination mechanisms into account. Here, hole or electron-type polarons can change their character from trapped to mobile, respectively. In our model system, the last effect is not taken into account, since the mobile carriers in the STNO are always electrons for all voltage ranges. Even if values for the
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Published 07 Jul 2015

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

  • D. J. Lockwood,
  • N. L. Rowell,
  • A. Benkouider,
  • A. Ronda,
  • L. Favre and
  • I. Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2498–2504, doi:10.3762/bjnano.5.259

Graphical Abstract
  • = 0.14. Both of these concentrations values, as determined from PL, are in agreement with the target value. The NWs are too large in diameter for a quantum confinement induced energy shift in the band gap. Nevertheless, NW PL is readily observed, indicating that efficient carrier recombination is
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Published 30 Dec 2014

Inorganic Janus particles for biomedical applications

  • Isabel Schick,
  • Steffen Lorenz,
  • Dominik Gehrig,
  • Stefan Tenzer,
  • Wiebke Storck,
  • Karl Fischer,
  • Dennis Strand,
  • Frédéric Laquai and
  • Wolfgang Tremel

Beilstein J. Nanotechnol. 2014, 5, 2346–2362, doi:10.3762/bjnano.5.244

Graphical Abstract
  • ]. The design of anisotropically shaped semiconductors is limited since the band-edge luminescence is further reduced due to a higher surface-to-volume ratio and the increased carrier delocalization lowering the probability of a radiative carrier recombination [10], but their major drawback, the
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Published 05 Dec 2014
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