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Search for "chemical bath deposition" in Full Text gives 27 result(s) in Beilstein Journal of Nanotechnology.

Effect of deposition temperature on the structural and optical properties of chemically prepared nanocrystalline lead selenide thin films

  • Anayara Begum,
  • Amir Hussain and
  • Atowar Rahman

Beilstein J. Nanotechnol. 2012, 3, 438–443, doi:10.3762/bjnano.3.50

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  • Anayara Begum Amir Hussain Atowar Rahman Department of Physics, Gauhati University, Guwahati-781014, Assam, India 10.3762/bjnano.3.50 Abstract Nanocrystalline lead selenide (PbSe) thin films were prepared on glass substrates by a chemical bath deposition method, using sodium selenosulfate
  • crystallite size. The optical absorption spectra of the nanocrystalline PbSe films showed a blue shift, and the optical band gap (Eg) was found to increase from 1.96 to 2.10 eV with the decrease in crystallite size. Keywords: chemical bath deposition; lattice parameter; lead selenide; Nelson–Riley plot
  • ], microwave heating [9], pulsed laser deposition [10], electrochemical atomic layer epitaxy [11], and electrodeposition [12], the chemical bath deposition method [13][14] is relatively simple and cost-effective, and has the advantage that it allows control over deposition parameters such as the pH, the
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Published 06 Jun 2012

Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements

  • Fredy Mesa,
  • William Chamorro,
  • William Vallejo,
  • Robert Baier,
  • Thomas Dittrich,
  • Alexander Grimm,
  • Martha C. Lux-Steiner and
  • Sascha Sadewasser

Beilstein J. Nanotechnol. 2012, 3, 277–284, doi:10.3762/bjnano.3.31

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  • in a combination of chemical bath deposition and a sputtering process [3][4]. The band gap of these Cu3BiS3 thin films was shown to be ~1.4 eV [3], which makes them an excellent candidate for application in solar cells. It was also shown that thin films prepared by a coevaporation process present
  • photovoltaic active interface with a SPV of ~130 mV [7]. It is well known from the Cu(In,Ga)Se2 solar cells that a buffer layer is required between the n-ZnO window and the p-type absorber layer to reach high efficiency values [8]. Traditionally, CdS deposited by chemical bath deposition (CBD) has been used as
  • , such as chemical bath deposition, atomic layer deposition, ion layer gas reaction (ILGAR) deposition, evaporation, and spray deposition [9]. One interesting aspect of the above mentioned solar cell materials CdTe and Cu(In,Ga)Se2 is their high efficiency despite the abundance of grain boundaries (GBs
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Published 23 Mar 2012
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