Design aspects of Bi₂Sr₂CaCu₂O_8+δ THz sources: optimization of thermal and radiative properties

• Mikhail M. Krasnov,
• Natalia D. Novikova,
• Roger Cattaneo,
• Alexey A. Kalenyuk and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 1392–1403, doi:10.3762/bjnano.12.103

• photolithography and argon-ion etching. Mesa structures are formed at the overlap between the line and the electrodes, as indicated in Figure 1a. Figure 2a,b shows current–voltage (I–V) characteristics of mesas of whisker- and crystal-based devices, respectively. The I–V curves are fairly similar. They contain

• of both devices. Current–voltage characteristics of mesa structures on (a) whisker- and (b) crystal-based devices. (c, d) On-chip generation–detection experiment for (c) whisker- and (d) crystal-based devices. Here, the ac resistance of the detector mesa is shown as function of the total dc

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• with the Ga+ focused ion beam (FIB), gas injection system (GIS), and nanomanipulator OmniProbe 400 (Oxford Instruments) with a tungsten tip. The nanomanipulator enabled a direct contact of single as-grown NWs. The current–voltage (I–V) characteristics were measured using a Keithley 237 source

Nonmonotonous temperature dependence of Shapiro steps in YBCO grain boundary junctions

• Leonid S. Revin,
• Dmitriy V. Masterov,
• Alexey E. Parafin,
• Sergey A. Pavlov and
• Andrey L. Pankratov

Beilstein J. Nanotechnol. 2021, 12, 1279–1285, doi:10.3762/bjnano.12.95

• depends on the characteristic frequency ωc = 2eIcRN/ℏ of the JJ. Results First, the current–voltage characteristics (IVCs) were measured, and the value of the critical current as a function of temperature was found, see Figure 1. The Ic(T) dependence is similar to the experimental observations for other

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• , EML, ETL, and cathode) is analyzed. Subsequently, various characteristics of LED containing carbon nanostructures and plasmonic NP are discussed in terms of EQE, internal quantum efficiency, luminance, EL, and current–voltage (I–V) characteristics. A list of various abbreviations employed in this

In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures

• Olena M. Kapran,
• Roman Morari,
• Taras Golod,
• Evgenii A. Borodianskyi,
• Vladimir Boian,
• Andrei Prepelita,
• Nikolay Klenov,
• Anatoli S. Sidorenko and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 913–923, doi:10.3762/bjnano.12.68

• ) transition occurs with Tc(S) = 8 K and T′c(S′) = 7.8 K and the shape of Rxx(T) remains the same. This indicates that the current–voltage characteristics at low bias are almost linear and resistance is almost bias-independent. However, at high bias, Iac = 500 μA, Rxx(T) is significantly smeared out and the

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• . The obtained solar cell shows response in a wide spectral range from ultraviolet to infrared. Current–voltage and current–voltage–temperature measurements were performed to evaluate basic photovoltaic parameters. At room temperature, the cells efficiency equals to 9.1% for textured structures and 5.4

• the light-trapping effect. The impact of light-trapping on the operation of solar cells is presented by means of current–voltage curves. In contrast, sample B showed a flat surface morphology. The average RMS roughness value was 9 nm. Therefore, interference peaks in external quantum efficiency (EQE

• solar cells. Figure 5b presents the current–voltage characteristics of the textured and planar ZnO/Si solar cells. Both types of the samples were investigated under standard test conditions (100 mW·cm−2, AM 1.5G, 25 °C). A better performance was observed for sample A. Short-circuit current values were

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• introduction of lattice vacancy defects, and with an increase in the average interatomic distances due to swelling, that is, a magnetovolume effect. And in a recent report implementing in situ current–voltage characterization, site-selective helium ion irradiation of cobalt-based magnetic multilayer structures

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

• Piotr Caban,
• Rafał Pietruszka,
• Jarosław Kaszewski,
• Monika Ożga,
• Bartłomiej S. Witkowski,
• Krzysztof Kopalko,
• Piotr Kuźmiuk,
• Katarzyna Gwóźdź,
• Ewa Płaczek-Popko,
• Krystyna Lawniczak-Jablonska and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

• lamp. The slit used in the measurements was 0.7 mm which corresponds to an analyzed area spot of 1 mm2. In the function of changing the excitation wavelength for 5 nm within the range of 300–950 nm, the number of generated carriers in the examined devices was calculated. Current–voltage light

• sample. Current–voltage characteristics Current–voltage characteristics are presented in Figure 9 for the samples A1–A4 (Figure 9a) and B1–B4 (Figure 9b). The corresponding values of PV parameters were collected in Table 4. First it can be noticed that the values of current density for particular samples

Absorption and photoconductivity spectra of amorphous multilayer structures

• Oxana Iaseniuc and
• Mihail Iovu

Beilstein J. Nanotechnol. 2020, 11, 1757–1763, doi:10.3762/bjnano.11.158

• upper one was transparent to the incident light, have been used for electrical and photoelectrical measurements. Figure 3 and Figure 4 show the current–voltage (I–V) characteristics of the amorphous thin-film HS Al–As0.40S0.30Se0.30/Ge0.09As0.09Se0.82/Ge.0.30As0.04S0.66–Al with positive or negative

• : Ge0.09As0.09Se0.82, 3: As0.40S0.30Se0.30, 4: As0.40S0.30Se0.30/Ge0.09As0.09Se0.82/Ge0.30As0.04S0.66). Current–voltage characteristics of the amorphous thin-film HS with a positive voltage applied to the top Al electrode, in the dark (1) and under illumination (2). Current–voltage characteristics of the amorphous

Selective detection of complex gas mixtures using point contacts: concept, method and tools

• Alexander P. Pospelov,
• Victor I. Belan,
• Dmytro O. Harbuz,
• Volodymyr L. Vakula,
• Lyudmila V. Kamarchuk,
• Yuliya V. Volkova and
• Gennadii V. Kamarchuk

Beilstein J. Nanotechnol. 2020, 11, 1631–1643, doi:10.3762/bjnano.11.146

• point-contact resistance. These changes are displayed in the dependencies of the Yanson point contact parameters. In the case of classical Yanson point-contact spectroscopy studies of electron–phonon interaction in metals, the energy-related processes are described by the current–voltage characteristic

• the second derivative of the current–voltage characteristic of the point contact and Vpc is the decrease in contact voltage. (b) A typical time dependence of the point-contact sensor conductance based on TCNQ compounds as a result of its interaction with the human breath (i.e., the breath point

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• monodisperse Ag2S NPs when using the CTAB surfactant. The optoelectronic properties of α-Ag2S/p-Si photodetector, such as current–voltage characteristics and responsivity in the dark and under illumination, were also improved after using the CTAB surfactant. The responsivity of the photodetector increases from

• . The current–voltage (I–V) characteristics of Ag2S/Si under dark and illuminated conditions were investigated at room temperature using a digital power supply, an electrometer, and a tungsten lamp. The spectral responsivity of the photodetector was measured using a calibrated monochromator in the

Excitonic and electronic transitions in Me–Sb₂Se₃ structures

• Nicolae N. Syrbu,
• Victor V. Zalamai,
• Ivan G. Stamov and
• Stepan I. Beril

Beilstein J. Nanotechnol. 2020, 11, 1045–1053, doi:10.3762/bjnano.11.89

• (In–Sb2Se3) contacts, the structures were obtained by either thermal sputtering under vacuum or electrochemical deposition onto the cleaved faces of single crystals (Figure 3A). Current–voltage characteristics suggest that the contacts have an ohmic behavior. The impedance has a frequency dependence

A new photodetector structure based on graphene nanomeshes: an ab initio study

• Babak Sakkaki,
• Hassan Rasooli Saghai,
• Ghafar Darvish and
• Mehdi Khatir

Beilstein J. Nanotechnol. 2020, 11, 1036–1044, doi:10.3762/bjnano.11.88

• electronic and optical characteristics of various GNM structures. To investigate the device-level properties of GNMs, their current–voltage characteristics are explored by DFT-based tight-binding (DFTB) in combination with non-equilibrium Green’s function (NEGF) methods. Band structure analysis shows that

• the current transport in the device channel. The effect of the finite bias voltage on the channel potential is calculated using the Poisson equation with the NEGF method. Figure 4 shows the current–voltage characteristics of the three types of studied devices. Figure 4a shows that 6-AGNR and 7-AGNR

• spectra of different GNM materials. (a) A4A4-6, Z6Z6-6 and A4Z6-6 and (b) A4A4-24, Z12Z12-24 and A4Z6-24. Current–voltage (I–V) characteristics of (a) different GNR devices and (b) GNM and graphene devices. Calculated energy gaps for GNMs with hydrogen passivation of carbon atoms in proximity to the holes

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• ). According to Li and co-workers [17], the anodization of GaAs with a carrier concentration of about 1018 cm−3 in a KOH electrolyte can be categorized into three etching modes, deduced from the analysis of the current–voltage plot at a scan rate of 5 mV·s−1. Practically no etching occurs when the applied

• light. The current–voltage characteristics measured with and without illumination reveal a good ohmic quality of the prepared Cr/Au contacts (Figure 8). Therefore, one can conclude that the detector works in the photoconductor mode. The responsivity of the detector is defined as where Iphoto is the

• in (A) shows a photo of five contacted GaAs nanowires on the same glass substrate. (B) Photocurrent build-up and relaxation of the photodetector measured for an IR illumination density of 800 mW·cm−2. Current–voltage characteristics measured in dark (curve 1) and under IR illumination with power

Microwave photon detection by an Al Josephson junction

• Leonid S. Revin,
• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Anton A. Yablokov,
• Igor V. Rakut,
• Victor O. Zbrozhek and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2020, 11, 960–965, doi:10.3762/bjnano.11.80

• Following the line proposed in [4], an aluminium Al/AlOx/Al tunnel junction 0.4 × 2 µm2 was fabricated using a self-aligned shadow evaporation technique. Its current–voltage characteristic shown in the inset of Figure 1 (see below) has a well-defined hysteresis. The double voltage gap of the junction is

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• contact on the p-type Si substrate. Figure 9 and Figure 10 compare the current–voltage characteristics of p-Si/n-Zn1−xMgxO heterojunctions for two films deposited by spin coating with x values of 0.10 (Figure 9) and 0.40 (Figure 10). One can see from Figure 9b and Figure 10b that in both cases the current

• , the investigated heterojunctions work as photodetectors at forward bias, while a classical p–n junction should function as a photodetector at reverse bias. Since the current–voltage characteristics are fit to straight lines in the log–log coordinates, it means that they correspond to a power function

• heterojunction with a Zn0.6Mg0.4O film, the current–voltage characteristics fit to the MG law both in the dark and under illumination (see Figure 10c). These observations suggest that the investigated heterojunctions work at forward bias as injection photodiodes [53][54]. A more detailed investigation of

A Josephson junction based on a highly disordered superconductor/low-resistivity normal metal bilayer

• Pavel M. Marychev and
• Denis Yu. Vodolazov

Beilstein J. Nanotechnol. 2020, 11, 858–865, doi:10.3762/bjnano.11.71

• of a single S layer at zero temperature). Our calculations show, that the proper choice of the thickness of the N layer leads both to nonhysteretic current–voltage characteristics even at low temperatures and a relatively large product IcRn. Keywords: normal metal–superconductor bilayer; Josephson

• achieve high noise immunity. Also many of these applications require to have a nonhysteretic current–voltage characteristic (IVC) and a large characteristic voltage Vc = IcRn, where Rn is the normal-state resistance of the junction. Tunnel superconductor–insulator–superconductor (SIS) Josephson junctions

• -thickness SN-N-SN bilayer in which the superconducting layer is partially (or entirely) etched by means of a focused ion beam. A sufficiently thick normal metal layer act as a good thermal bath, which yields a nonhysteretic current–voltage characteristic even at low temperatures. However, the increase of

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

• Majid Sanaeepur

Beilstein J. Nanotechnol. 2020, 11, 688–694, doi:10.3762/bjnano.11.56

• rather high transmission probabilities. Electrons with other energies have an extremely small chance of passing through. This causes RTDs to exhibit NDR in their current–voltage characteristic. Conventionally, RTDs are made by vertical stacking of bulk semiconductor materials with different bandgap

• the effect of CB and NC substitutional defects at the interface between the left ABNNR barrier and the well on the current–voltage characteristic of the proposed RTD. Both defects lower the on-site energy at the place of the substituted atom due to the n-type character, which shifts all energy levels

• compares the current–voltage characteristic of RTDs including BC and CN defects at the interface between the left barrier and the left spacer with that of a defect-free RTD. If there is no defect in the left spacer, by increasing the bias voltage a quantum well is formed in this region, which localizes

Current measurements in the intermittent-contact mode of atomic force microscopy using the Fourier method: a feasibility analysis

• Berkin Uluutku and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2020, 11, 453–465, doi:10.3762/bjnano.11.37

• collection of lock-in amplifiers [30][31]. More recently, Borgani et al. used Fourier analysis to investigate non-linear conductance in C-AFM measurements, acquiring current–voltage responses at every scan point without sacrificing scanning speed [32]. In order to explore the various phenomena involved in

Anomalous current–voltage characteristics of SFIFS Josephson junctions with weak ferromagnetic interlayers

• Tairzhan Karabassov,
• Anastasia V. Guravova,
• Aleksei Yu. Kuzin,
• Elena A. Kazakova,
• Shiro Kawabata,
• Boris G. Lvov and
• Andrey S. Vasenko

Beilstein J. Nanotechnol. 2020, 11, 252–262, doi:10.3762/bjnano.11.19

• Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia 10.3762/bjnano.11.19 Abstract We present a quantitative study of the current–voltage characteristics (CVC) of SFIFS Josephson junctions (S = bulk superconductor, F = metallic ferromagnet, I = insulating barrier) with weak ferromagnetic

• interlayers, which we attribute to DOS energy dependencies in the case of small exchange fields in the F layers. Keywords: current–voltage characteristics; Josephson junctions; proximity effect, superconductivity; superconductor/ferromagnet hybrid nanostructures; Introduction It is well known that

• attention and have been extensively studied both experimentally [32][33][34][35][36][37][38][39][40][41] and theoretically [23][45][76][77][78][79][80]. For instance, the current–voltage characteristics (CVC) of SIFS Josephson junctions with a strong insulating layer were studied in [45]. They exhibit

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• –matrix multiplication [10][11][12]. An access to a continuum of resistance states exhibiting highly linear current–voltage [I(V)] characteristics were exploited to achieve a numerical precision up to 8 bits. Ag-based filamentary resistive switches [13][14][15][16][17][18][19][20][21][22][23][24][25][26

Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• vertical charge transport through individual molecules of aromatic SAMs by using conductive atomic force microscope (c-AFM) [12][13][14][15] and scanning tunneling microscope (STM) techniques [16][17]. Using these methods, current–voltage (I–V-) curves on the SAM-forming organothiolates has been determined

Semitransparent Sb₂S₃ thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Lothar Weinhardt,
• Monika Blum,
• Clemens Heske,
• Wanli Yang,
• Ilona Oja Acik and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

• % w/w) from Chemsavers. Solar cell characterization The current–voltage (I–V) curves of the solar cells were measured by using a factory-calibrated solar simulator (Newport Oriel Sol3A class AAA) that provided AM1.5G, 100 mA cm−2 light intensity, a metal mask with adjustable aperture area, and a

Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

• Wanli Yang,
• Shuaiqi Fan,
• Yuxing Liang and
• Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

• non-equilibrium minority carriers under the influence of a piezo potential and to calculate the corresponding current–voltage (I–V) characteristics of a piezoelectric p–n junction exposed to mechanical loading. An effective solution to describe this non-equilibrium process has been put forward

A biomimetic nanofluidic diode based on surface-modified polymeric carbon nitride nanotubes

• Kai Xiao,
• Baris Kumru,
• Lu Chen,
• Lei Jiang,
• Bernhard V. K. J. Schmidt and
• Markus Antonietti

Beilstein J. Nanotechnol. 2019, 10, 1316–1323, doi:10.3762/bjnano.10.130

• CNNMs. Modification of the carbon nitride nanotube membrane The current–voltage (I–V) measurements of the bare carbon nitride nanotubes showed that ion transport across the CNNM is symmetric. The CNNM shows no ion rectification because of its symmetric structure and surface-charge distribution (Figure

• CNNM after unilateral AHPA group modification. (c) FTIR spectra before and after the unilateral modification with AHPA and AA groups. (a) Current–voltage curves before and after unilateral modification with AHPA. (b) Current–voltage curves before and after unilateral modification with AA. Supporting