Effect of Anderson localization on light emission from gold nanoparticle aggregates

• Mohamed H. Abdellatif,
• Marco Salerno,
• Gaser N. Abdelrasoul,
• Ioannis Liakos,
• Alice Scarpellini,
• Sergio Marras and
• Alberto Diaspro

Beilstein J. Nanotechnol. 2016, 7, 2013–2022, doi:10.3762/bjnano.7.192

• effect, which helps in accelerating the electron–electron scattering. This is one reason for emission by hot carriers of particle plasmons, which induces emission from the collective oscillation of conduction electrons. Hence, the enhancement cannot be due to the slowing down of nonradiative relaxation

Electric field induced structural colour tuning of a silver/titanium dioxide nanoparticle one-dimensional photonic crystal

• Eduardo Aluicio-Sarduy,
• Simone Callegari,
• Diana Gisell Figueroa del Valle,
• Andrea Desii,
• Ilka Kriegel and
• Francesco Scotognella

Beilstein J. Nanotechnol. 2016, 7, 1404–1410, doi:10.3762/bjnano.7.131

• ) the pump excitation strongly perturbs the Fermi distribution and creates electrons that are not in thermal equilibrium, called energetic electrons; via electron–electron scattering, within a few tens to hundreds of fs, a new Fermi distribution of hot electrons is obtained. ii) Within a few ps, the hot

• electrons release their energy to the lattice via electron–phonon scattering. iii) The hot lattice releases its energy to the environment within hundreds of ps. With the temporal resolution of our setup, which is about 150 fs, we could not observe the electron–electron scattering, but the dynamic of the

Thermoelectricity in molecular junctions with harmonic and anharmonic modes

• Bijay Kumar Agarwalla,
• Jian-Hua Jiang and
• Dvira Segal

Beilstein J. Nanotechnol. 2015, 6, 2129–2139, doi:10.3762/bjnano.6.218

• (infinite) of diagrams (ring type) in the perturbative series, taking into account all electron scattering processes that are facilitated by the absorption or emission of a single quantum ω0. Physically, this summation collects not only sequential tunneling electrons, but all coordinated multi-tunneling

• function for the AH model was reached from a master equation calculation [7][43]. Both treatments are perturbative to second order in the electron–vibration interaction. We take into account all electron scattering processes that are facilitated by the absorption or emission of a single quantum ω0. It is

Fabrication of high-resolution nanostructures of complex geometry by the single-spot nanolithography method

• Alexander Samardak,
• Margarita Anisimova,
• Aleksei Samardak and
• Alexey Ognev

Beilstein J. Nanotechnol. 2015, 6, 976–986, doi:10.3762/bjnano.6.101

• not far away from the point where they penetrate into the Au film. As result, the outer edge of a ring patterned on a Au film has a smaller diameter than that on a Si substrate and becomes blurred. In contrast, for a single-crystal Si substrate, the electron scattering occurs with less variation

• Si substrate at a dose of 0.25 pC (left) and 0.35 pC (right); (b) the ring patterned on a polycrystalline Au film at a dose of 0.25 pC (left) and 2.5 pC (right). (a,c) Monte Carlo simulation of 250 electron scattering trajectories at 10 keV incident energy in a 75 nm thick PMMA layer on bulk Si and

Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

• Brett B. Lewis,
• Michael G. Stanford,
• Jason D. Fowlkes,
• Kevin Lester,
• Harald Plank and
• Philip D. Rack

Beilstein J. Nanotechnol. 2015, 6, 907–918, doi:10.3762/bjnano.6.94

• incorporates the O2 1) surface adsorption, 2) permeation/diffusion, 3) preferential O2–Pt adsorption, 4) electron stimulated reaction, and 5) subsequent COx out-diffusion. Purification experiments were simulated using a hybrid numerical approximation consisting of (1) a Monte Carlo electron scattering

• –corrector method and is second order accurate with a cubed truncation error. Adsorbed, immobile atomic oxygen COim is available for electron-induced dissociation as represented by Equation 3 and provides the coupling between the Monte Carlo electron scattering simulation and the transport calculations

Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature

• Mykola Telychko,
• Jan Berger,
• Zsolt Majzik,
• Pavel Jelínek and
• Martin Švec

Beilstein J. Nanotechnol. 2015, 6, 901–906, doi:10.3762/bjnano.6.93

• topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not

• accompanied by any out-of-plane relaxations of carbon atoms. Keywords: AFM; electron scattering; graphene; SiC; STM; Introduction Graphene epitaxially grown on a substrate differs in many aspects from free-standing graphene or graphene exfoliated onto insulating surfaces. The influence of the substrate

Electrical contacts to individual SWCNTs: A review

• Wei Liu,
• Christofer Hierold and
• Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

• , the additional barriers caused by the deformation of the SWCNT were avoided [26]. Transmission line model: CNFETs with longer channel lengths exhibit a higher on-resistance due to the electron scattering effect along the channels [46]. This could be caused by intrinsic structural defects or by the

Optical properties and electrical transport of thin films of terbium(III) bis(phthalocyanine) on cobalt

• Peter Robaschik,
• Pablo F. Siles,
• Daniel Bülz,
• Peter Richter,
• Manuel Monecke,
• Michael Fronk,
• Svetlana Klyatskaya,
• Daniel Grimm,
• Oliver G. Schmidt,
• Mario Ruben,
• Dietrich R. T. Zahn and
• Georgeta Salvan

Beilstein J. Nanotechnol. 2014, 5, 2070–2078, doi:10.3762/bjnano.5.215

• exhibit a higher hole mobility as compared to the porphyrins [25], which could lead to a higher current. When comparing the topographic characteristics of TbPc2 samples with 20 nm and 80 nm (see Figures 4 and 5), the variation with grain size would induce more grain boundaries for electron scattering in

Challenges in realizing ultraflat materials surfaces

• Takashi Yatsui,
• Wataru Nomura,
• Fabrice Stehlin,
• Olivier Soppera,
• Makoto Naruse and
• Motoichi Ohtsu

Beilstein J. Nanotechnol. 2013, 4, 875–885, doi:10.3762/bjnano.4.99

• topic in the field of laser-machining processes, in which a flattened mirror can increase the laser durability [3]. The electron scattering losses must also be reduced for various industrial and scientific applications. To realize high-power light-emitting diodes (LEDs), the surface roughness of the

Characterization and properties of micro- and nanowires of controlled size, composition, and geometry fabricated by electrodeposition and ion-track technology

• Maria Eugenia Toimil-Molares

Beilstein J. Nanotechnol. 2012, 3, 860–883, doi:10.3762/bjnano.3.97

• investigations of the electrical transport properties of metal and semiconductor nanowires are necessary in order to better understand classical size effects such as electron scattering at surfaces and grain boundaries. These effects lead to an increase of the specific resistivity of the wire under study

Review and outlook: from single nanoparticles to self-assembled monolayers and granular GMR sensors

• Alexander Weddemann,
• Inga Ennen,
• Anna Regtmeier,
• Camelia Albon,
• Annalena Wolff,
• Katrin Eckstädt,
• Nadine Mill,
• Michael K.-H. Peter,
• Jochen Mattay,
• Carolin Plattner,
• Norbert Sewald and
• Andreas Hütten

Beilstein J. Nanotechnol. 2010, 1, 75–93, doi:10.3762/bjnano.1.10

• may result in various features. The GMR ratio of such a magnetic pattern may be calculated according to V. Wiser as [87] where the constant C is a measure for the spin dependence of electron