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Search for "eutectic" in Full Text gives 33 result(s) in Beilstein Journal of Nanotechnology.

From lithium to sodium: cell chemistry of room temperature sodium–air and sodium–sulfur batteries

  • Philipp Adelhelm,
  • Pascal Hartmann,
  • Conrad L. Bender,
  • Martin Busche,
  • Christine Eufinger and
  • Juergen Janek

Beilstein J. Nanotechnol. 2015, 6, 1016–1055, doi:10.3762/bjnano.6.105

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Published 23 Apr 2015

Effects of swift heavy ion irradiation on structural, optical and photocatalytic properties of ZnO–CuO nanocomposites prepared by carbothermal evaporation method

  • Sini Kuriakose,
  • D. K. Avasthi and
  • Satyabrata Mohapatra

Beilstein J. Nanotechnol. 2015, 6, 928–937, doi:10.3762/bjnano.6.96

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  • Cu mixture led to the deposition of ZnO–CuO nanocomposite film with excess Zn onto the substrate. When this as-deposited film is annealed at 600 °C for 1 h in oxygen atmosphere, it led to the formation of Cu–Zn eutectic nanodroplets at the film surface. Since the melting point of Zn is low (419 °C
  • ), during annealing at 600 °C a fraction of the excess Zn atoms evaporates by forming Zn vapor, which dissolves into the Cu–Zn eutectic nanodroplets and oxidizes forming ZnO nanoparticles. These ZnO nanoparticles formed by the catalytic action of Cu–Zn eutectic nanodroplets on the film surface combine
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Published 10 Apr 2015

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

  • D. J. Lockwood,
  • N. L. Rowell,
  • A. Benkouider,
  • A. Ronda,
  • L. Favre and
  • I. Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2498–2504, doi:10.3762/bjnano.5.259

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  • transformation from the small Au nanoclusters located within the SiO2-cover-free nanopits to the Au0.18Si0.82 eutectic alloy is obtained by thermal annealing at 550 °C for 30 min. The annealing and growth experiments were performed in the MBE growth chamber of a Riber SIVA32 system with a base pressure of 10−11
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Published 30 Dec 2014

The influence of molecular mobility on the properties of networks of gold nanoparticles and organic ligands

  • Edwin J. Devid,
  • Paulo N. Martinho,
  • M. Venkata Kamalakar,
  • Úna Prendergast,
  • Christian Kübel,
  • Tibebe Lemma,
  • Jean-François Dayen,
  • Tia. E. Keyes,
  • Bernard Doudin,
  • Mario Ruben and
  • Sense Jan van der Molen

Beilstein J. Nanotechnol. 2014, 5, 1664–1674, doi:10.3762/bjnano.5.177

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  • molecularly interconnected arrays. Complementary future experiments may use conducting-probe AFM or eutectic GaIn methods. In that case, monolayers of S-BPP formed at both electrodes could be gently brought into mechanical contact, after which temperature-dependent I(V) measurements can be done. Conclusion
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Published 29 Sep 2014

Review of nanostructured devices for thermoelectric applications

  • Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

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  • ][79][80], and rapidly diffused and applied by several other groups [81][82][83][84][85]. The VLS growth is based on the catalytic effect of metal (gold or iron) nanoparticles, deposited on a silicon substrate. At high temperatures, an eutectic alloy is formed among metal and Si, supplied by a silane
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Published 14 Aug 2014

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

  • Wolfgang Molnar,
  • Alois Lugstein,
  • Tomasz Wojcik,
  • Peter Pongratz,
  • Norbert Auner,
  • Christian Bauch and
  • Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

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  • straight, crystalline, nanometre-sized wires. During VLS growth a Si precursor is introduced, which is cracked and dissolved into the catalytic liquid phase. Generally Au is used as the catalyst on Si substrates, forming a liquid alloy with a eutectic temperature of 364 °C, which, upon supersaturation
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Published 31 Jul 2012

Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst

  • Britta Kämpken,
  • Verena Wulf,
  • Norbert Auner,
  • Marcel Winhold,
  • Michael Huth,
  • Daniel Rhinow and
  • Andreas Terfort

Beilstein J. Nanotechnol. 2012, 3, 535–545, doi:10.3762/bjnano.3.62

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  • eutectic point of the silicon–gold alloy at 363 °C. However, the best results are achieved at temperatures of 450 °C or higher [19]. Typical deposition methods for the metal include sputtering [20], or its adsorption in the form of nanoclusters [21] or nanoparticles [22]. The sputtering process requires no
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Published 25 Jul 2012

An MCBJ case study: The influence of π-conjugation on the single-molecule conductance at a solid/liquid interface

  • Wenjing Hong,
  • Hennie Valkenier,
  • Gábor Mészáros,
  • David Zsolt Manrique,
  • Artem Mishchenko,
  • Alexander Putz,
  • Pavel Moreno García,
  • Colin J. Lambert,
  • Jan C. Hummelen and
  • Thomas Wandlowski

Beilstein J. Nanotechnol. 2011, 2, 699–713, doi:10.3762/bjnano.2.76

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  • ) [13][15][16][33][34][35][36], crossed-wire geometry [37], nanoparticle junctions [38][39], mechanically controlled break junctions (MCBJ) [40][41][42][43][44][45], electromigration setups [46][47], nanopores [48], and liquid metal junctions employing mercury [49][50] or eutectic alloys of gallium and
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Published 18 Oct 2011
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