Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

• 1.79 eV and an increase of the solar cell performance (Figure 3c) from 8.25% for the undoped Pb-HP to 11.33% for the CsSn0.1Pb0.9IBr2-based device [69]. The latter cell also exhibited a record Voc of 1.26 V amounting to ≈70% of the optical bandgap and vividly showing a high potential of such

Sb₂S₃ grown by ultrasonic spray pyrolysis and its application in a hybrid solar cell

• Erki Kärber,
• Atanas Katerski,
• Ilona Oja Acik,
• Arvo Mere,
• Valdek Mikli and
• Malle Krunks

Beilstein J. Nanotechnol. 2016, 7, 1662–1673, doi:10.3762/bjnano.7.158

• between the Sb/S ratio in the films and the corresponding values of Eg suggest that values around 1.6 eV are expected for crystalline and stoichiometric Sb2S3 (S/Sb = 1.5) films [60]. Thus, based on the low optical bandgap of 1.6 eV, along with the S/Sb ratio of 1.53 obtained by EDX, we can deduce that

Optical absorption signature of a self-assembled dye monolayer on graphene

• Tessnim Sghaier,
• Sylvain Le Liepvre,
• Céline Fiorini,
• Ludovic Douillard and
• Fabrice Charra

Beilstein J. Nanotechnol. 2016, 7, 862–868, doi:10.3762/bjnano.7.78

• changes of the optical bandgap. However, alkyl chains present here should reduce such interactions by maintaining the conjugated moiety at a larger distance from graphene. This is substantiated by the preservation of the absorption line-shape and the balance between vibronic contributions. This also means

An insight into the mechanism of charge-transfer of hybrid polymer:ternary/quaternary chalcopyrite colloidal nanocrystals

• Parul Chawla,
• Son Singh and
• Shailesh Narain Sharma

Beilstein J. Nanotechnol. 2014, 5, 1235–1244, doi:10.3762/bjnano.5.137

• in Figure 3C(a–c), which shows the enhancement of the optical bandgap (as calculated from the Tauc’s plot involving the absorption coefficient, α and the photon energy hν) from CISe to CZTSe. The bandgap values of pristine CISe, CIGSe and CZTSe are ≈1.03 eV, 1.1 eV and 1.15 eV, respectively (Figure

Surface passivation and optical characterization of Al₂O₃/a-SiC_x stacks on c-Si substrates

• Gema López,
• Pablo R. Ortega,
• Cristóbal Voz,
• Isidro Martín,
• Mónica Colina,
• Anna B. Morales,
• Albert Orpella and
• Ramón Alcubilla

Beilstein J. Nanotechnol. 2013, 4, 726–731, doi:10.3762/bjnano.4.82

• and glass respectively. The results of the absorbance measurements are shown in Figure 2. Other works have previously reported an optical bandgap of Eopt = 6.4 ± 0.1 eV for as-deposited and annealed ALD Al2O3 films [18]. This means that this material is transparent for wavelengths above 200 nm

Photoelectrochemical and Raman characterization of In₂O₃ mesoporous films sensitized by CdS nanoparticles

• Mikalai V. Malashchonak,
• Sergey K. Poznyak,
• Eugene A. Streltsov,
• Anatoly I. Kulak,
• Olga V. Korolik and
• Alexander V. Mazanik

Beilstein J. Nanotechnol. 2013, 4, 255–261, doi:10.3762/bjnano.4.27

• optical bandgap of bulk CdS. The observed increase in Eg with the decreasing number of SILAR cycles can be explained by the well-known quantum-confinement effect related to the discretization of energy levels in nanoparticles and the increase in the energy gap between LUMO and HOMO levels with the