Current–voltage characteristics of manganite–titanite perovskite junctions

• Benedikt Ifland,
• Patrick Peretzki,
• Birte Kressdorf,
• Philipp Saring,
• Andreas Kelling,
• Michael Seibt and
• Christian Jooss

Beilstein J. Nanotechnol. 2015, 6, 1467–1484, doi:10.3762/bjnano.6.152

• barriers in the conduction and valence band. Furthermore, there are no influences of interface states taken into account that might give rise to additional space charges and barriers. If we consider a narrow band gap, p-type semiconductor 1, and a wide gap, n-type semiconductor 2, the J–V characteristics

Highly NO₂ sensitive caesium doped graphene oxide conductometric sensors

• Carlo Piloto,
• Marco Notarianni,
• Mahnaz Shafiei,
• Elena Taran,
• Dilini Galpaya,
• Cheng Yan and
• Nunzio Motta

Beilstein J. Nanotechnol. 2014, 5, 1073–1081, doi:10.3762/bjnano.5.120

• . Both responses are approximately linear and proportional to the gas concentration. Since NO2 is an oxidative gas with strong electron-withdrawing ability, the decrease in resistance confirms the p-type semiconductor behaviour of the sensors, like the one observed for carbon nanotubes [64]. For GO-Cs

Integration of ZnO and CuO nanowires into a thermoelectric module

• Dario Zappa,
• Simone Dalola,
• Guido Faglia,
• Elisabetta Comini,
• Matteo Ferroni,
• Caterina Soldano,
• Vittorio Ferrari and
• Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2014, 5, 927–936, doi:10.3762/bjnano.5.106

• at 30 min [23]. Copper oxide is a p-type semiconductor with a narrow band-gap of 1.2 eV with monoclinic crystal structure [38]. In the present work, copper oxide nanowires have been grown by thermal oxidation of metallic Cu thin-film layer, previously deposited by RF sputtering on 20 mm × 20 mm

An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH₃ gas sensor applications

• Elnaz Akbari,
• Vijay K. Arora,
• Aria Enzevaee,
• Mohamad. T. Ahmadi,
• Mehdi Saeidmanesh,
• Mohsen Khaledian,
• Hediyeh Karimi and
• Rubiyah Yusof

Beilstein J. Nanotechnol. 2014, 5, 726–734, doi:10.3762/bjnano.5.85

• be formed for implementation by applying positive or negative gate voltage and can be useful from the application perspective [35]. Gas molecules can modulate the electronic structure of graphene in diverse ways. The adsorption of CO2 and O2 converts the system to p-type semiconductor while the

One-step synthesis of high quality kesterite Cu₂ZnSnS₄ nanocrystals – a hydrothermal approach

• Vincent Tiing Tiong,
• John Bell and
• Hongxia Wang

Beilstein J. Nanotechnol. 2014, 5, 438–446, doi:10.3762/bjnano.5.51

• significant concerns over their production scale [1]. In the process of developing new PV materials that do not have the above problems, the compound Cu2ZnSnS4 (CZTS) is emerging as a promising new sustainable light absorbing material for PV technologies. As a direct band p-type semiconductor material, CZTS

Preparation of NiS/ZnIn₂S₄ as a superior photocatalyst for hydrogen evolution under visible light irradiation

• Liang Wei,
• Yongjuan Chen,
• Jialin Zhao and
• Zhaohui Li

Beilstein J. Nanotechnol. 2013, 4, 949–955, doi:10.3762/bjnano.4.107

• [34], can be an effective co-catalyst in promoting photocatalytic hydrogen evolution over ZnIn2S4 and MoS2/ZnIn2S4 show even superior performance for hydrogen evolution than Pt/ZnIn2S4 [35]. NiS, a p-type semiconductor, is also reported to be a good electrocatalyst for cathodic hydrogen evolution in

Nanostructure-directed chemical sensing: The IHSAB principle and the dynamics of acid/base-interface interaction

• James L. Gole and
• William Laminack

Beilstein J. Nanotechnol. 2013, 4, 20–31, doi:10.3762/bjnano.4.3

• electrons, decreases the conductometric resistance and increases conductance. The removal of electrons, as would occur with an acidic analyte, decreases the majority charge carrier concentration and the conductance and increases resistance. The opposite behavior will be observed for a p-type semiconductor