Theoretical investigations of oxygen vacancy effects in nickel-doped zirconia from ab initio XANES spectroscopy at the oxygen K-edge

• Dick Hartmann Douma,
• Lodvert Tchibota Poaty,
• Alessio Lamperti,
• Stéphane Kenmoe,
• Abdulrafiu Tunde Raji,
• Alberto Debernardi and
• Bernard M’Passi-Mabiala

Beilstein J. Nanotechnol. 2022, 13, 975–985, doi:10.3762/bjnano.13.85

• electric dipolar selection rule Δl = ±1, and also to the stereochemical arrangement of neighbors around the absorbing atom. By tuning the incident photon energy to the X-ray edge energy of the target atom, it is possible to determine the coordination environment, bonding characteristics, as well as spin

Self-assembly of C₆₀ on a ZnTPP/Fe(001)–p(1 × 1)O substrate: observation of a quasi-freestanding C₆₀ monolayer

• Guglielmo Albani,
• Michele Capra,
• Alessandro Lodesani,
• Alberto Calloni,
• Gianlorenzo Bussetti,
• Marco Finazzi,
• Franco Ciccacci,
• Alberto Brambilla,
• Lamberto Duò and
• Andrea Picone

Beilstein J. Nanotechnol. 2022, 13, 857–864, doi:10.3762/bjnano.13.76

• acquired at normal emission with a 150 mm hemispherical electron analyzer from SPECS GmbH. The probing depth of UPS is a few angstroms [49]. A He lamp has been employed as a source of non-monochromatized unpolarized UV photons. The He-I line, with a photon energy of 21.2 eV, has been used to excite the

Tunable high-quality-factor absorption in a graphene monolayer based on quasi-bound states in the continuum

• Jun Wu,
• Yasong Sun,
• Feng Wu,
• Biyuan Wu and
• Xiaohu Wu

Beilstein J. Nanotechnol. 2022, 13, 675–681, doi:10.3762/bjnano.13.59

• interband contributions and is described by: Here, σintra and σinter are the intraband and interband conductivity, respectively. In the mid-infrared wavelength region considered in this work, the Fermi level is greater than half of the photon energy, that is, ℏω < 2Ef. Thus, the intraband contribution will

Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• the relationship [51][52]: where hν = 21.22 eV is the He (I) photon energy, W = 16.01 eV is the width of the spectrum, that is, the energy difference between the VBM and the photoemission cutoff energy, and Eg = 2.80 eV is the bandgap energy calculated from the transmission spectrum. The work function

• (Wf) was determined to be equal to 4.01 eV and was calculated as the difference between the photon energy of the He (I) line and the position of the cutoff energy of the photoemission (17.21 eV). Cross-sectional analysis The structural investigations included measurements of the material composition

Tin dioxide nanomaterial-based photocatalysts for nitrogen oxide oxidation: a review

• Viet Van Pham,
• Hong-Huy Tran,
• Thao Kim Truong and
• Thi Minh Cao

Beilstein J. Nanotechnol. 2022, 13, 96–113, doi:10.3762/bjnano.13.7

• increasing film thickness [45]. Zhou et al. indicated that the direct bandgap transition of SnO2 has an absorption coefficient α and the optical bandgap (Eg) can be determined by the calculation of α(hν)2 ∝ (hν − Eg)1/2/hν, and the plot of α(hν)2 vs photon energy hν, respectively. For example, the bandgap of

Influence of magnetic domain walls on all-optical magnetic toggle switching in a ferrimagnetic GdFe film

• Rahil Hosseinifar,
• Evangelos Golias,
• Ivar Kumberg,
• Quentin Guillet,
• Karl Frischmuth,
• Sangeeta Thakur,
• Mario Fix,
• Manfred Albrecht,
• Florian Kronast and
• Wolfgang Kuch

Beilstein J. Nanotechnol. 2022, 13, 74–81, doi:10.3762/bjnano.13.5

• magnetic circular dichroism (XMCD) at the Gd M5 absorption edge at 1182.6 eV photon energy was used as magnetic contrast mechanism. A small electromagnet mounted inside the sample holder allows for applying a magnetic field to the sample for demagnetizing or creating domains. Before the start of each

First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications

• Muhammad Atif Sattar,
• Najwa Al Bouzieh,
• Maamar Benkraouda and
• Noureddine Amrane

Beilstein J. Nanotechnol. 2021, 12, 1101–1114, doi:10.3762/bjnano.12.82

• the cubic π-SnSe alloy is presented in Figure 11a as a function of the photon energy. It can be observed that for the π-SnSe system, the static dielectric constant ε1(0) is 12.82, which is positive. The positive value of the real dielectric tensor ε1(ω) suggests that the studied material is a

• semiconductor and transparent. There is only one peak that can be observed for the π-SnSe alloy in the visible energy range. Initially, by increasing the photon energy (ħω), the value of ε1(ω) starts to increase until it reaches its maximum peak value of 19.65 at 1.75 eV. Afterward, ε1(ω) starts to gradually

• decrease and reaches its minimum value of −3.80 at 5.5 eV. Beyond this photon energy value, the value of ε1(ω) shows an increasing trend but stays negative at high energies. The imaginary part ε2(ω) of the dielectric tensor of the studied π-SnSe system as a function of photon energy is presented in Figure

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

• Adem Koçyiğit,
• Adem Sarılmaz,
• Teoman Öztürk,
• Faruk Ozel and
• Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

• from 1200 to 300 nm, which is compatible with the absorbance result. The optical bandgap of thiospinel CuNiCoS4 was calculated from the Tauc and Kubelka–Munk equations. The graph of (F(R∞)hν)2 as function of the photon energy was plotted to estimate the bandgap of nanocrystals with direct band

Rapid controlled synthesis of gold–platinum nanorods with excellent photothermal properties under 808 nm excitation

• Jialin Wang,
• Qianqian Duan,
• Min Yang,
• Boye Zhang,
• Li Guo,
• Pengcui Li,
• Wendong Zhang and
• Shengbo Sang

Beilstein J. Nanotechnol. 2021, 12, 462–472, doi:10.3762/bjnano.12.37

• significant part of the photon energy is absorbed through LSPR [1][2]. The LSPR effect excites the free conduction band electrons and energy is released in the form of heat through nonradiative decay [3][4]. Au, Ag, Pt, and other noble metal nanoparticles all exhibit an obvious LSPR effect and strong spectral

• heating. The Au@Pt NRs solution exhibits a stronger thermal response than AuNRs with the same amount of Au. Due to the fact that the LSPR of Au@Pt NRs is closer to 808 nm and has a wider band, it absorbs more photon energy and releases more heat. Next, to explore the influence of laser power on the

Structural and optical characteristics determined by the sputtering deposition conditions of oxide thin films

• Petronela Prepelita,
• Florin Garoi and
• Valentin Craciun

Beilstein J. Nanotechnol. 2021, 12, 354–365, doi:10.3762/bjnano.12.29

• dielectric constant is: where n is the refractive index and k is the extinction coefficient. Figure 12 shows the variations of real and imaginary parts of the dielectric constants of ZnO and SiO2 films with photon energy. It can be seen that the value of the real part is higher than that of the imaginary

• energy of the incident photons for (a) SiO2 and (b) ZnO samples with different thickness values. Refractive index dependence on the wavelength (dispersion) for (a) SiO2 and (b) ZnO thin films. Photon energy dependence of the (a) real and (b) imaginary parts of permittivity for SiO2 (i) and ZnO (ii) thin

Free and partially encapsulated manganese ferrite nanoparticles in multiwall carbon nanotubes

• Saja Al-Khabouri,
• Salim Al-Harthi,
• Toru Maekawa,
• Mohamed E. Elzain,
• Ashraf Al-Hinai,
• Ahmed D. Al-Rawas,
• Abbsher M. Gismelseed,
• Ali A. Yousif and
• Myo Tay Zar Myint

Beilstein J. Nanotechnol. 2020, 11, 1891–1904, doi:10.3762/bjnano.11.170

• . Here, we estimated the MnFe2O4/MWCNTs work function from the difference in the photon energy of 21.2 eV (He I) and from the energy difference between the secondary cutoff energy (Ecutoff) and the Fermi edge (EF), which is found to be 4.4 eV. This work function value is slightly lower than that of

Unravelling the interfacial interaction in mesoporous SiO₂@nickel phyllosilicate/TiO₂ core–shell nanostructures for photocatalytic activity

• Bridget K. Mutuma,
• Xiluva Mathebula,
• Isaac Nongwe,
• Bonakele P. Mtolo,
• Boitumelo J. Matsoso,
• Rudolph Erasmus,
• Zikhona Tetana and
• Neil J. Coville

Beilstein J. Nanotechnol. 2020, 11, 1834–1846, doi:10.3762/bjnano.11.165

• @NiPS/TiO2 were recorded in the wavelength range of 200 to 800 nm and are presented in the insets of Figure 3. The bandgap energy (Eg) values of the materials were obtained from the plot of the square root of the Kubelka–Munk function, (F(R)·hν)1/2 as a function of the photon energy hν. The bandgap

Nanocasting synthesis of BiFeO₃ nanoparticles with enhanced visible-light photocatalytic activity

• Thomas Cadenbach,
• Maria J. Benitez,
• A. Lucia Morales,
• Cesar Costa Vera,
• Luis Lascano,
• Francisco Quiroz,
• Alexis Debut and
• Karla Vizuete

Beilstein J. Nanotechnol. 2020, 11, 1822–1833, doi:10.3762/bjnano.11.164

• plot of the square root of the Kubelka–Munk function vs the photon energy (Tauc plot, Figure 6). The observed bandgap energy of 2.07 eV is considerably smaller than that of bulk BiFeO3 and comparable to those found in the literature for similarly sized particles [6][23][29][53]. However, we would like

The influence of an interfacial hBN layer on the fluorescence of an organic molecule

• Christine Brülke,
• Oliver Bauer and
• Moritz M. Sokolowski

Beilstein J. Nanotechnol. 2020, 11, 1663–1684, doi:10.3762/bjnano.11.149

• pumped cw semiconductor laser (Coherent Sapphire LP UBB CDRH) with a wavelength of 458 nm (photon energy of 2.698 eV or 21,816 cm−1) and P = 50 mW. To block the laser light from entering the spectrometer, a long-pass filter (cut-off at 475 nm) was positioned in front of the entrance slit of the

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• Tu and Tu with CTAB was calculated by using a Tauc plot. As shown in Figure 5b, the extrapolation of the linear part of the curve to the photon energy axis produces the optical energy gap. The energy gap of Ag2S NPs synthesized in Tu and Tu with CTAB was 1.5 and 2 eV, respectively. The energy gap was

• . Inset is the Raman spectrum of thiourea solution. (a) Optical absorption of Ag2S prepared with and without CTAB, (b) (αhν)2 versus photon energy plot. TEM images of Ag2S NPs synthesized (a) without CTAB and (b) with CTAB surfactant. FTIR spectra of Ag2S NPs prepared without and with CTAB. SEM images of

Controlling the electronic and physical coupling on dielectric thin films

• Philipp Hurdax,
• Michael Hollerer,
• Larissa Egger,
• Georg Koller,
• Xiaosheng Yang,
• Anja Haags,
• Serguei Soubatch,
• Frank Stefan Tautz,
• Mathias Richter,
• Alexander Gottwald,
• Peter Puschnig,
• Martin Sterrer and
• Michael G. Ramsey

Beilstein J. Nanotechnol. 2020, 11, 1492–1503, doi:10.3762/bjnano.11.132

• (c). (d) Multilayer 6P islands, Tdep,6P = 30 °C, size: 60 nm × 60 nm, Ub = +1.7 V, it = 30 pA. All STM images were recorded at 80 K. Photoemission momentum maps of 6P on MgO(100)/Ag(100) at energies of (a) 0.5 eV and (b) 2.5 eV below EF, measured with a photon energy of 35 eV and at an incidence

Impact of fluorination on interface energetics and growth of pentacene on Ag(111)

• Qi Wang,
• Meng-Ting Chen,
• Antoni Franco-Cañellas,
• Bin Shen,
• Thomas Geiger,
• Holger F. Bettinger,
• Frank Schreiber,
• Ingo Salzmann,
• Alexander Gerlach and
• Steffen Duhm

Beilstein J. Nanotechnol. 2020, 11, 1361–1370, doi:10.3762/bjnano.11.120

• the photon energy, which allowed to determine the coherent position (PH) and the coherent fraction (fH) of the adsorbate atoms [66][69]. The former gave the adsorption distance in terms of the lattice spacing of the silver substrate: dH = d0(n + PH) (typical precision < 0.05 Å), with n being an

• corrections associated with it [82]. For HR-XPS, the photon energy was 800 eV, and the angle between the incoming beam and the substrate normal was 60°. Thickness-dependent UPS and XPS experiments were carried out at Soochow University in an ultrahigh vacuum system consisting of three interconnected chambers

• ) Reflectivity and photoelectron yield (Yp) as a function of the photon energy (hυ) relative to the Bragg energy (EBragg = 2630 eV) for a (sub)monolayer (<2 Å) F4PEN thin film on Ag(111). For each element, the coherent position (PH) and the coherent fraction (fH) are given. (d) Chemical structure of F4PEN. (e

Microwave photon detection by an Al Josephson junction

• Leonid S. Revin,
• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Anton A. Yablokov,
• Igor V. Rakut,
• Victor O. Zbrozhek and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2020, 11, 960–965, doi:10.3762/bjnano.11.80

• fit of the lifetime below). In this case, the potential barrier height is 1.3 × 10−24 J, while the photon energy at 9 GHz is 6 × 10−24 J. Thus, we are in the range where few-photon detection is possible. Results and Discussion In this section, we present preliminary results of the first measurements

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• the alloy. Moreover, the luminescence is excited by the photon energy (3.81 eV) much lower than the bandgap for the thin film with the x value of 0.40 (4.28 eV). The same is true for the luminescence measured at low temperature (Table 2). The bandgap of the alloy at low temperature was recalculated

• coating and aerosol spray pyrolysis, measured at low temperature (20 K) and room temperature. One can see that the PL band in the film prepared by spay pyrolysis is much narrower as compared to the band in the film prepared by spin coating, and it is shifted to higher photon energy, i.e., closer to the

Effect of Ag loading position on the photocatalytic performance of TiO₂ nanocolumn arrays

• Jinghan Xu,
• Yanqi Liu and
• Yan Zhao

Beilstein J. Nanotechnol. 2020, 11, 717–728, doi:10.3762/bjnano.11.59

• , transfer to the conduction band of TiO2, or directly participate in the catalytic reaction [39]. Because of the wide bandgap, TiO2 can only absorb UV light. After the valence band electron absorbs the photon energy, it transitions from the valence band to the conduction band, and it takes part in the

Semitransparent Sb₂S₃ thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Lothar Weinhardt,
• Monika Blum,
• Clemens Heske,
• Wanli Yang,
• Ilona Oja Acik and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

• Laboratory (LBNL). The Sb2S3 films were excited with a photon energy of 180 eV, and the emitted X-rays at the S L2,3 edge were recorded as a function of energy. The reference chemicals for XES measurements were purchased from Alfa Aesar (Sb2S3 and Sb2O3 powders, both 99.999% w/w) and Sb2(SO4)3 powder (99.91

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

• Petronela Prepelita,
• Ionel Stavarache,
• Doina Craciun,
• Florin Garoi,
• Catalin Negrila,
• Beatrice Gabriela Sbarcea and
• Valentin Craciun

Beilstein J. Nanotechnol. 2019, 10, 1511–1522, doi:10.3762/bjnano.10.149

• for the as-deposited and RTA-treated ITO samples. Photon energy dependence of the a) real and b) imaginary part of the complex dielectric permittivity for the as-deposited and RTA-treated ITO samples. Parameters and conditions for the production of ITO thin films. XRD results for as-deposited and RTA

BiOCl/TiO₂/diatomite composites with enhanced visible-light photocatalytic activity for the degradation of rhodamine B

• Minlin Ao,
• Kun Liu,
• Xuekun Tang,
• Zishun Li,
• Qian Peng and
• Jing Huang

Beilstein J. Nanotechnol. 2019, 10, 1412–1422, doi:10.3762/bjnano.10.139

• edges of TiO2/diatomite and BTD show a small red shift compared with BiOCl and TiO2. The band gap energy (Eg) of the samples was calculated by the Kubelka–Munk equation [44]: αhν = A(hν − Eg)n/2, and the absorption coefficient, photon energy, a constant and band gap of the sample are expressed by α, hν

Gas sensing properties of individual SnO₂ nanowires and SnO₂ sol–gel nanocomposites

• Alexey V. Shaposhnik,
• Dmitry A. Shaposhnik,
• Sergey Yu. Turishchev,
• Olga A. Chuvenkova,
• Stanislav V. Ryabtsev,
• Alexey A. Vasiliev,
• Xavier Vilanova,
• Francisco Hernandez-Ramirez and
• Joan R. Morante

Beilstein J. Nanotechnol. 2019, 10, 1380–1390, doi:10.3762/bjnano.10.136

• compact packing of SnO2 lattices in powder particles. The XANES and XPS results do not contradict each other. The analysis depth of Sn M4,5 XANES is ≈10 nm, which is much larger than the Sn 3d5/2 XPS analysis depth (<2 nm at 800 eV synchrotron photon energy). It is clear that the inner parts of the SnO2

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112

• irrespective of treatment temperature. NBIS-induced critical instability occurs in the high-temperature-annealed TFT. Keywords: metal oxide; photo-induced instabilities; photon energy; thermal annealing; thin-film transistor (TFT) device; Introduction The rapid process of industrialization and

• adjacent interfaces. The incident photon energy (>2.7 eV) excites the defect generation and the leakage current increases in the devices regardless of heating temperature. By means of the double-scan mode and a positive gate pulse, the NBIS-caused hysteresis of the TFTs annealed at different temperatures

• irradiation; (g) photo-leakage current (VGS= −10V and VDS= 10 V) of a-IGZO TFTs in the reverse measurement as a function of photon energy of the incident light. Transfer characteristics in the forward measurement for the devices annealed at (a) 300 °C, (b) 350 °C, and (c) 400 °C, and in the reverse