Many-body effects in semiconducting single-wall silicon nanotubes

• Wei Wei and
• Timo Jacob

Beilstein J. Nanotechnol. 2014, 5, 19–25, doi:10.3762/bjnano.5.2

• results shed some light on understanding the physical properties of SiNTs and potential applications in silicon-based nanoscale device components. It should be pointed out that many-body effects have also been highlighted in silicon nanowires [24][42] and carbon nanotubes due to the reduced dimensionality

Dimer/tetramer motifs determine amphiphilic hydrazine fibril structures on graphite

• Loji K. Thomas,
• Nadine Diek,
• Uwe Beginn and
• Michael Reichling

Beilstein J. Nanotechnol. 2012, 3, 658–666, doi:10.3762/bjnano.3.75

• successful in studying films of strands [22][23][24] and innate graphitic structures [25][26][27], but less so with isolated organic strands. Some reports of STM imaging to obtain high-quality images of strands include those of polypropylene [28], molecular chains of magnetic molecules [29], silicon

• nanowires [30], and DNA/biomolecules [31][32]. With regard to STM imaging of 1-D structures on HOPG, one should be wary of innate graphitic artefacts and 1-D fibre-like structures present on bare HOPG surface, mostly occurring as a result of cleaving [25][26][27]. Although, graphitic artefacts may show

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• doped NWs appeared to be [112] oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation. Keywords: chemical vapour deposition; field-effect transistor; oligosilanes; radiation-induced nanostructures; silicon

• nanowires; vapor–liquid–solid mechanism; Introduction As potential building blocks for nanoelectronics [1][2], bio-chemical sensors [3][4], light-emitting devices with extremely low power consumption, and solar cells [5], nanotubes [6] and NWs [7] have drawn a lot of interest during the last two decades

Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst

• Britta Kämpken,
• Verena Wulf,
• Norbert Auner,
• Marcel Winhold,
• Michael Huth,
• Daniel Rhinow and
• Andreas Terfort

Beilstein J. Nanotechnol. 2012, 3, 535–545, doi:10.3762/bjnano.3.62

• Frankfurt am Main, Germany Department of Structural Biology, Max Planck Institute of Biophysics, Max-von-Laue-Straße 3, 60438 Frankfurt am Main, Germany 10.3762/bjnano.3.62 Abstract In this work the applicability of neopentasilane (Si(SiH3)4) as a precursor for the formation of silicon nanowires by using

• gold nanoparticles as a catalyst has been explored. The growth proceeds via the formation of liquid gold/silicon alloy droplets, which excrete the silicon nanowires upon continued decomposition of the precursor. This mechanism determines the diameter of the Si nanowires. Different sources for the gold

• deposited as a thin film and thermally annealed, but can also be patterned by using UV irradiation, providing access to laterally structured layers of silicon nanowires. Keywords: chemical vapor deposition; gold; nanoparticle; patterning; radiation-induced nanostructures; vapor-liquid-solid mechanism