Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• can greatly simplify the circuit volume of traditional PN junctions and increase the circuit integration. NWs-NEM switches Single-crystal nanowires are excellent candidates for NEM switches due to their uniform chemical and physical structure, and good reproducibility of structure and composition

• to the removal of grain boundaries, the single-crystal GR devices are four times more capable of handling current than polycrystalline GR devices. Shen et al. [71] prepared GR ESD switches and analyzed their electrical characteristics and reliability. The switch did work only once. Therefore, ESD

Controllable two- and three-state magnetization switching in single-layer epitaxial Pd_1−xFe_x films and an epitaxial Pd_0.92Fe_0.08/Ag/Pd_0.96Fe_0.04 heterostructure

• Igor V. Yanilkin,
• Amir I. Gumarov,
• Gulnaz F. Gizzatullina,
• Roman V. Yusupov and
• Lenar R. Tagirov

Beilstein J. Nanotechnol. 2022, 13, 334–343, doi:10.3762/bjnano.13.28

• epitaxial thin-film heterostructure Pd0.92Fe0.08(20 nm)/Ag(20 nm)/Pd0.96Fe0.04(20 nm) were grown in an ultrahigh-vacuum (UHV) apparatus (SPECS, Germany) by molecular beam deposition. Epi-polished MgO(100) single-crystal plates (Crystal GmbH, Germany) were used as substrates. The deposition routine and

Topographic signatures and manipulations of Fe atoms, CO molecules and NaCl islands on superconducting Pb(111)

• Carl Drechsel,
• Philipp D’Astolfo,
• Jung-Ching Liu,
• Thilo Glatzel,
• Rémy Pawlak and
• Ernst Meyer

Beilstein J. Nanotechnol. 2022, 13, 1–9, doi:10.3762/bjnano.13.1

• Sample preparation The Pb(111) single crystal, purchased from Mateck GmbH, was cleaned by several sputtering and annealing cycles in ultra-high vacuum (UHV). CO dosing on the cold substrate was done in the microscope chamber by increasing the pressure via a leak valve up to p ≈ 1 × 10−7 mbar for one

Design aspects of Bi₂Sr₂CaCu₂O_8+δ THz sources: optimization of thermal and radiative properties

• Mikhail M. Krasnov,
• Natalia D. Novikova,
• Roger Cattaneo,
• Alexey A. Kalenyuk and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 1392–1403, doi:10.3762/bjnano.12.103

• sources. In this work we analyze thermal and radiative properties of such devices based on mesa structures of a layered high-temperature superconductor Bi2Sr2CaCu2O8+δ. Two types of devices are considered containing either a conventional large single crystal or a whisker. We perform numerical simulations

• , to handle self-heating, and impedance matching microwave antennas, to improve RPE. In this work we analyze design aspects of THz sources based on Bi-2212 mesa structures. Thermal and radiative properties are studied for two types of devices containing either a conventional large single crystal or a

• using a conventional single crystal. Figure 1c shows sketches of both devices. Bi-2212 whiskers have typical aspect ratios of 100:10:1 in the a, b, and c crystallographic directions, respectively [42]. Our whiskers have typical dimensions of several hundreds of micrometers along a, 20–40 μm along b, and

Morphology-driven gas sensing by fabricated fractals: A review

• Vishal Kamathe and
• Rupali Nagar

Beilstein J. Nanotechnol. 2021, 12, 1187–1208, doi:10.3762/bjnano.12.88

• of ZnO dendrites and single-crystal ZnO dendrites up to the macroscale [77]. These were synthesized via a vapor-phase transport method at 930 °C using a copper catalyst. Figure 16a and Figure 16b show, respectively, a schematic and a SEM image of the ZnO dendrite gas sensor device. The ZnO dendrites

First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications

• Muhammad Atif Sattar,
• Najwa Al Bouzieh,
• Maamar Benkraouda and
• Noureddine Amrane

Beilstein J. Nanotechnol. 2021, 12, 1101–1114, doi:10.3762/bjnano.12.82

• the next generation of electronic and photonic systems [35][36]. The orthorhombic α-SnSe, an indirect bandgap (0.9 eV) semiconductor, has been an immense research topic in the TE field since the highest ZT value of ≈2.6 at 923 K was reported in the p-type single crystal along the b axis [1]. The n

• -type Bi-doped SnSe single crystal also gives a high ZT value of 2.2 (along the b axis) at 773 K [37]. Motivated by these prominent TE performances, which were due to ultra-low thermal conductivity along with modest electrical transport properties, SnSe-based TE alloys have drawn considerable attention

An overview of microneedle applications, materials, and fabrication methods

• Zahra Faraji Rad,
• Philip D. Prewett and
• Graham J. Davies

Beilstein J. Nanotechnol. 2021, 12, 1034–1046, doi:10.3762/bjnano.12.77

• complex multistep processes and expensive tools developed for the microelectronics industry [74][85], as introduced already. Subtractive technologies, in the form of wet and dry etching, are most frequently used. In wet etching, a single crystal silicon wafer is immersed in baths of various chemical

• after 2–3 weeks [95]. In other work, hollow pyramidal silicon dioxide microneedle arrays, with heights of 150–200 μm, were made by oxidising microporous silicon produced by a combination of wet etching and electrochemistry [96]. Porous silicon microneedles may overcome the brittle properties of single

• crystal silicon and provide a degree of biodegradability, but their fabrication methods are relatively complex and involve the use of toxic and corrosive chemicals like HF. In addition, the mechanical properties of materials, including Young’s modulus, significantly degrade with increasing porosity. (Note

The role of convolutional neural networks in scanning probe microscopy: a review

• Ido Azuri,
• Irit Rosenhek-Goldian,
• Neta Regev-Rudzki,
• Georg Fantner and
• Sidney R. Cohen

Beilstein J. Nanotechnol. 2021, 12, 878–901, doi:10.3762/bjnano.12.66

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• properties of helium ion-irradiated silicon nanopillars have since been investigated as well, observing a softening behavior upon amorphization and swelling [89]. Helium ion irradiation of single-crystal diamond nanopillars has revealed an orientation dependence of the irradiation damage and associated

• the beam energy and current, the growth of single-crystal nanowires was also shown. This is reminiscent of nanowire growth by the vapor–solid–liquid mechanism, except here the process was performed at room temperature and without the flow of a gaseous precursor. In the HIM case it was proposed that

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

• Piotr Caban,
• Rafał Pietruszka,
• Jarosław Kaszewski,
• Monika Ożga,
• Bartłomiej S. Witkowski,
• Krzysztof Kopalko,
• Piotr Kuźmiuk,
• Katarzyna Gwóźdź,
• Ewa Płaczek-Popko,
• Krystyna Lawniczak-Jablonska and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

• for aluminum-doped zinc oxide). Experimental GaAs surface treatment We used lightly Zn-doped GaAs single-crystal (100) wafer (p = 6.8 × 1016 cm−3, ρ = 3.2 × 10−1 Ω·cm, μ ≤ 225 cm2/Vs, d = 400 μm) (fabricated at the Institute of Electronic Materials Technology, ITME) as the substrate. Before starting

Local stiffness and work function variations of hexagonal boron nitride on Cu(111)

• Abhishek Grewal,
• Yuqi Wang,
• Matthias Münks,
• Klaus Kern and
• Markus Ternes

Beilstein J. Nanotechnol. 2021, 12, 559–565, doi:10.3762/bjnano.12.46

• acquisition. Sample preparation: A Cu(111) single crystal (MaTeck GmbH) is cleaned via repeated cycles of Ar-ion sputtering at room temperature followed by annealing to 1020 K in an ultrahigh-vacuum preparation chamber. A partial layer of h-BN is grown by chemical vapour deposition by heating the Cu(111

Interface interaction of transition metal phthalocyanines with strontium titanate (100)

• Reimer Karstens,
• Thomas Chassé and
• Heiko Peisert

Beilstein J. Nanotechnol. 2021, 12, 485–496, doi:10.3762/bjnano.12.39

• be driven by the ionization potential difference between substrate and adsorbate. In addition, fluorination may affect significantly the adsorption geometry on surfaces as well as the single-crystal structure and arrangement in thin films [34][35][36][37]. Furthermore, local chemical interactions

• , we will apply two different, well-characterized preparation procedures. For preparation I, the STO single crystal was cleaned in vacuo as described above. Routinely, the cleanliness is checked by X-ray photoelectron spectroscopy and the quality of the surface structure by LEED. Examples of LEED

Reconstruction of a 2D layer of KBr on Ir(111) and electromechanical alteration by graphene

• Zhao Liu,
• Antoine Hinaut,
• Stefan Peeters,
• Sebastian Scherb,
• Ernst Meyer,
• Maria Clelia Righi and
• Thilo Glatzel

Beilstein J. Nanotechnol. 2021, 12, 432–439, doi:10.3762/bjnano.12.35

• . Methods Sample preparation The Ir(111) single crystal (MaTeck GmbH, Germany) was cleaned by alternating cycles of Ar+ sputtering and annealing at 1400 K under ultrahigh vacuum (UHV) conditions with a base pressure of less than 1 × 10−10 mbar. Graphene was prepared by dosing ethylene with a chamber

TiO_x/Pt₃Ti(111) surface-directed formation of electronically responsive supramolecular assemblies of tungsten oxide clusters

• Marco Moors,
• Yun An,
• Agnieszka Kuc and
• Kirill Yu. Monakhov

Beilstein J. Nanotechnol. 2021, 12, 203–212, doi:10.3762/bjnano.12.16

• interaction. Both characteristics are implemented by atomically ordered titanium oxide ultrathin films grown on a bimetallic Pt3Ti(111) single crystal surface. More importantly, the use of this material has already proven successful in supporting the self-organization of Pd clusters [21]. Exposing the Pt3Ti

• , the Pt3Ti(111) single crystal surface (purchased by MaTecK) was cleaned by several cycles of neon sputtering (p(Ne) = 1 × 10−5 mbar) for 10 min and subsequently annealed at 1200 K for 25 min until a sharp p(2×2) pattern was visible by LEED. This procedure led to a clean alloy surface with a single Pt

A review on the green and sustainable synthesis of silver nanoparticles and one-dimensional silver nanostructures

• Sina Kaabipour and
• Shohreh Hemmati

Beilstein J. Nanotechnol. 2021, 12, 102–136, doi:10.3762/bjnano.12.9

Molecular dynamics modeling of the influence forming process parameters on the structure and morphology of a superconducting spin valve

• Alexander Vakhrushev,
• Aleksey Fedotov,
• Vladimir Boian,
• Roman Morari and
• Anatolie Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1776–1788, doi:10.3762/bjnano.11.160

• structure of each layer does not form an ideal single crystal, but rather a polycrystalline system is formed. The influence of the interface quality on the spin valve functionality is an especially important issue, which has been experimentally investigated in previous works [16][17][18][19] where the

• nanosystem contains about 20 layers. In this work, we consider the deposition of only the first four layers of cobalt and niobium. The general problem statement for the multilayer nanosystem formation process modeling is presented in Figure 4. The first material layer formed by atoms of single-crystal

The influence of an interfacial hBN layer on the fluorescence of an organic molecule

• Christine Brülke,
• Oliver Bauer and
• Moritz M. Sokolowski

Beilstein J. Nanotechnol. 2020, 11, 1663–1684, doi:10.3762/bjnano.11.149

Oxidation of Au/Ag films by oxygen plasma: phase separation and generation of nanoporosity

• Abdel-Aziz El Mel,
• Said A. Mansour,
• Mujaheed Pasha,
• Atef Zekri,
• Janarthanan Ponraj,
• Akshath Shetty and
• Yousef Haik

Beilstein J. Nanotechnol. 2020, 11, 1608–1614, doi:10.3762/bjnano.11.143

• % of silver and gold, respectively, as determined by EDS. The deposition time was 15 min, the deposition pressure was fixed at 10 mTorr and the distance between the substrate and the targets was ≈10 cm. All deposition processes were carried out on single crystal silicon wafers at a 30 rpm rotation

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• Optics, Germany). An Ag2S/Si photodetector was prepared by depositing a Ag2S layer on the front side of a silicon substrate through a mask by drop-casting. A single-crystal p-type silicon (111) substrate with an electrical resistivity of 3–5 Ω·cm and a thickness of 300 μm was used. As shown in Figure 2

Fabrication of nano/microstructures for SERS substrates using an electrochemical method

• Jingran Zhang,
• Tianqi Jia,
• Xiaoping Li,
• Junjie Yang,
• Zhengkai Li,
• Guangfeng Shi,
• Xinming Zhang and
• Zuobin Wang

Beilstein J. Nanotechnol. 2020, 11, 1568–1576, doi:10.3762/bjnano.11.139

• ] fabricated micro/nanostructures on the surface of Au-coated single crystal silicon. By changing the etching time and current, micro/nanostructures with different size scales and geometric shapes (such as hexagons and pentagons) were obtained. Compared with other geometries, the hexagonal micro/nanostructure

Adsorption and self-assembly of porphyrins on ultrathin CoO films on Ir(100)

• Feifei Xiang,
• Tobias Schmitt,
• Marco Raschmann and
• M. Alexander Schneider

Beilstein J. Nanotechnol. 2020, 11, 1516–1524, doi:10.3762/bjnano.11.134

• molecules were carefully outgassed for 2 to 5 h prior to deposition at ±10 K of the evaporation temperature. CoO was prepared on an Ir(100) single crystal surface cleaned by ion sputtering and annealing. The Ir(100)-(1 × 1) surface was prepared according to [31]. We employ thin films of two distinct

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

• Santiago H. Andany,
• Gregor Hlawacek,
• Stefan Hummel,
• Charlène Brillard,
• Mustafa Kangül and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111

• probes with boron-doped 1 kΩ sensing elements, connected in a Wheatstone bridge configuration with aluminum tracks [20][21] and with single crystal diamond (SCD) tips that are commercially available (SCL-SensorTech Fabrication GMBH, Vienna, Austria). The SCD tips (tip radius below 15 nm, height 12–16 µm

Magnetic-field-assisted synthesis of anisotropic iron oxide particles: Effect of pH

• Andrey V. Shibaev,
• Petr V. Shvets,
• Darya E. Kessel,
• Roman A. Kamyshinsky,
• Anton S. Orekhov,
• Sergey S. Abramchuk,
• Alexei R. Khokhlov and
• Olga E. Philippova

Beilstein J. Nanotechnol. 2020, 11, 1230–1241, doi:10.3762/bjnano.11.107

• bind to each other and position themselves in a column-like orientation, which gives a rod-like shape to the aggregate. Further recrystallization of the aggregates leads to the formation of single-crystal nanorods (Figure 7). The formation of single-crystal nanorods may be facilitated by the hexagonal

• shape of the primary nanocrystals, so that the adjacent nanocrystals can mutually orient along their facets that is along the same crystal plane {220}. The attachment of the single-crystal nanorods releases the interfacial tension [22], thus reducing the free energy. However, if the bound nanocrystals

• are oriented along different crystal planes within the aggregates, the crystalline structure should be reorganized in order to give a single-crystal rod. The presence of primary nanocrystals building the rod-like particles (shown in Figure 7c) favors the proposed model of particle growth by

Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111)

• Maximilian Schaal,
• Takumi Aihara,
• Marco Gruenewald,
• Felix Otto,
• Jari Domke,
• Roman Forker,
• Hiroyuki Yoshida and
• Torsten Fritz

Beilstein J. Nanotechnol. 2020, 11, 1168–1177, doi:10.3762/bjnano.11.101

• (111). Therefore, h-BN on Ni(111) can potentially be used as n-type contact in molecular electronic devices with the advantage to minimize the metal–organic hybridization. Experimental Sample preparation The Ni(111) single crystal (MaTecK GmbH, Germany, purity 99.99%) was prepared by several cycles of

Excitonic and electronic transitions in Me–Sb₂Se₃ structures

• Nicolae N. Syrbu,
• Victor V. Zalamai,
• Ivan G. Stamov and
• Stepan I. Beril

Beilstein J. Nanotechnol. 2020, 11, 1045–1053, doi:10.3762/bjnano.11.89

• absorption spectra of the Sb2Se3 single crystal with a 13 μm thickness measured at room temperature under E||c and E⟂c polarization conditions. The spectra show the high absorption coefficients with maxima at 1.162 eV (marked as A, E||c) and 1.185 eV (marked as B, E⟂c) at the absorption level of 2 × 104 cm−1