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Search for "tunneling" in Full Text gives 305 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

Induced electric conductivity in organic polymers

  • Konstantin Y. Arutyunov,
  • Anatoli S. Gurski,
  • Vladimir V. Artemov,
  • Alexander L. Vasiliev,
  • Azat R. Yusupov,
  • Danfis D. Karamov and
  • Alexei N. Lachinov

Beilstein J. Nanotechnol. 2022, 13, 1551–1557, doi:10.3762/bjnano.13.128

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  • films can be obtained by centrifugation from a solution in cyclohexanone on a metal surface with a thickness from several nanometers up to micrometers. High homogeneity and defect-free surfaces on nanoscopic scales have been repeatedly confirmed by various methods, including scanning tunneling and
  • described in terms of the injection current model limited by the space charge. At low temperatures, the tunneling mechanism is the predominant mechanism. Figure 3 shows the current–voltage characteristics of Pb–PDP–Pb structures with different PDP film thicknesses. With increase of the polymer film
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Published 19 Dec 2022

Density of states in the presence of spin-dependent scattering in SF bilayers: a numerical and analytical approach

  • Tairzhan Karabassov,
  • Valeriia D. Pashkovskaia,
  • Nikita A. Parkhomenko,
  • Anastasia V. Guravova,
  • Elena A. Kazakova,
  • Boris G. Lvov,
  • Alexander A. Golubov and
  • Andrey S. Vasenko

Beilstein J. Nanotechnol. 2022, 13, 1418–1431, doi:10.3762/bjnano.13.117

Graphical Abstract
  • superconducting hybrid structures. For example, the DOS calculation is essential for the quasiparticle current computation in SIFS (where I denotes an insulating layer) [29][51][53][54][55][56][57] or SFIFS tunneling Josephson junctions [58]. Therefore, computation of the DOS is also needed for many actively
  • description of the corresponding scattering effects on the DOS structure. It should not be forgotten that the linearized solution of the form in Equation 20 is quite limited in its application. In our case, it is valid when γB ≫ 1 and df ≪ min(ξf,), which is true for γB = 50. This tunneling limit is
  • features is the examination of the current–voltage characteristics. Utilizing the Werthamer expression for the quasiparticle current in tunneling junctions, we can calculate the I–V curves for an SFIFS junction. The current then reads Here, Nf1,2(E) is the density of states (DOS) in the corresponding
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Published 01 Dec 2022

Studies of probe tip materials by atomic force microscopy: a review

  • Ke Xu and
  • Yuzhe Liu

Beilstein J. Nanotechnol. 2022, 13, 1256–1267, doi:10.3762/bjnano.13.104

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  • shown to be removed one by one from the sample surface by tip indentation of the scanning tunneling microscope (STM). The probing of the interaction forces by AFM and thus the analysis of van der Waals (vdW) forces can provide valuable information on the evolution of the tip size. Carbon nanotube probes
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Published 03 Nov 2022

Design of surface nanostructures for chirality sensing based on quartz crystal microbalance

  • Yinglin Ma,
  • Xiangyun Xiao and
  • Qingmin Ji

Beilstein J. Nanotechnol. 2022, 13, 1201–1219, doi:10.3762/bjnano.13.100

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  • expose chiral surfaces even with high symmetry and low Miller index surface orientations [131][132][133]. Therefore, metals with chiral surfaces may have enantiospecific interactions with chiral molecules [134][135][136][137][138]. Scanning tunneling microscopy (STM) studies and simulations indicated
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Published 27 Oct 2022

A cantilever-based, ultrahigh-vacuum, low-temperature scanning probe instrument for multidimensional scanning force microscopy

  • Hao Liu,
  • Zuned Ahmed,
  • Sasa Vranjkovic,
  • Manfred Parschau,
  • Andrada-Oana Mandru and
  • Hans J. Hug

Beilstein J. Nanotechnol. 2022, 13, 1120–1140, doi:10.3762/bjnano.13.95

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  • scanning tunneling microscope (STM) can be transformed into a tuning fork-based AFM simply by replacing the rigid STM tip by a tuning fork with an attached tip and by adding an extra pre-amplifier and a PLL to drive the tuning fork oscillation and measure shifts in its resonance frequency arising from the
  • . We further demonstrate that this instrument can be used for multimodal AFM operation, for example, to simultaneously map vertical and lateral forces and tunneling current signals with atomic resolution. It also permits the measurement of weak forces with high measurement bandwidths permitting the
  • grain boundaries [69] of the rather thick metallic coating applied to the tip side of the cantilever. Note that a nominally 20 nm thick Pt coating is required to permit tunneling, but the coating thickness along the cantilever could presumably be minimized using masking procedures similar to those used
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Published 11 Oct 2022

Efficiency of electron cooling in cold-electron bolometers with traps

  • Dmitrii A. Pimanov,
  • Vladimir A. Frost,
  • Anton V. Blagodatkin,
  • Anna V. Gordeeva,
  • Andrey L. Pankratov and
  • Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 896–901, doi:10.3762/bjnano.13.80

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  • just a refrigerator. One of the possible solutions of the problem is the on-chip electron cooling, which creates a drain of thermal energy from small detecting elements with the help of tunneling electrons. Cold-electron bolometers (CEBs) [1][2][3] have high potential to improve the electron cooling
  • , and the coefficient β shows how much of PS comes back to the absorber. PA = IAV is the power due to Andreev heating current, V is the voltage drop across the NIS junction, and Pleak = V2/Rleak is the power associated with the leakage current. The quasi-particle tunneling current is written as: where V
  • is the NIS junction voltage, Te and Ts are the electron temperatures in the normal metal and the superconductor, is the density of states in the superconductor, Δ is the superconducting gap, and kB is the Boltzmann constant. Using the integral of the tunneling current through the NIS junction
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Published 07 Sep 2022

Numerical modeling of a multi-frequency receiving system based on an array of dipole antennas for LSPE-SWIPE

  • Alexander V. Chiginev,
  • Anton V. Blagodatkin,
  • Dmitrii A. Pimanov,
  • Ekaterina A. Matrozova,
  • Anna V. Gordeeva,
  • Andrey L. Pankratov and
  • Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 865–872, doi:10.3762/bjnano.13.77

Graphical Abstract
  • help reaching better noise characteristics than those of CEBs with two SIN tunnel junctions due to several reasons. First, the responsivity is increased by a factor of two due to hot electrons tunneling only through one SIN junction. Second, the bolometer resistance is decreased twice, which helps in
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Published 01 Sep 2022

Self-assembly of C60 on a ZnTPP/Fe(001)–p(1 × 1)O substrate: observation of a quasi-freestanding C60 monolayer

  • Guglielmo Albani,
  • Michele Capra,
  • Alessandro Lodesani,
  • Alberto Calloni,
  • Gianlorenzo Bussetti,
  • Marco Finazzi,
  • Franco Ciccacci,
  • Alberto Brambilla,
  • Lamberto Duò and
  • Andrea Picone

Beilstein J. Nanotechnol. 2022, 13, 857–864, doi:10.3762/bjnano.13.76

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  • tunneling microscopy/spectroscopy and ultraviolet photoemission spectroscopy. C60 nucleates compact and well-ordered hexagonal domains on top of the ZnTPP buffer layer, suggesting a high surface diffusivity of C60 and a weak coupling between the overlayer and the substrate. Accordingly, work function
  • fullerene films stabilized directly on metal surfaces. Our results unveil a model system that could be useful in applications in which a quasi-freestanding monolayer of C60 interfaced with a metallic electrode is required. Keywords: fullerene; scanning tunneling microscopy; ultraviolet photoemission
  • W tips. Scanning tunneling spectroscopy (STS) data, that is, dI/dV curves for the investigation of the sample density of states (DOS), have been collected at room temperature, using a lock-in amplifier with a modulation amplitude of 60 mV. All STM and STS measurements have been carried out while
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Published 30 Aug 2022

Direct measurement of surface photovoltage by AC bias Kelvin probe force microscopy

  • Masato Miyazaki,
  • Yasuhiro Sugawara and
  • Yan Jun Li

Beilstein J. Nanotechnol. 2022, 13, 712–720, doi:10.3762/bjnano.13.63

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  • (HF2LI with PID option, Zurich Instruments) to generate and control the AC bias. The typical sensitivity of our measurements was estimated to be δV = 1 mV (see Appendix). We simultaneously measured the tunneling current through the I/V converter as scanning tunneling microscopy (STM) [34] to consider the
  • of the rutile TiO2(110) surface. Terrace and step structures were observed, and the surface was flat within a single step height of 325 pm [50]. Figure 3b shows the SPV image obtained simultaneously with the AFM image. No tunneling current was detected in the AC-KPFM measurement. The SPV profile is
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Published 25 Jul 2022

Experimental and theoretical study of field-dependent spin splitting at ferromagnetic insulator–superconductor interfaces

  • Peter Machon,
  • Michael J. Wolf,
  • Detlef Beckmann and
  • Wolfgang Belzig

Beilstein J. Nanotechnol. 2022, 13, 682–688, doi:10.3762/bjnano.13.60

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  • ; tunneling; Introduction The proximity effect between superconductors and ferromagnets has been investigated intensively in recent years [1][2], giving rise to the field of superconducting spintronics [3][4]. Among the emergent phenomena are π-junctions [5][6], reentrant and multiperiodic reentrant
  • an oxide layer. The normal layer acts as the tunnel probe to measure the differential conductance of the superconductor and is assumed not to influence the system properties. Since the size of the detector electrode is not small (unlike the tip of a scanning tunneling microscope) and the FI affects
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Published 20 Jul 2022

A superconducting adiabatic neuron in a quantum regime

  • Marina V. Bastrakova,
  • Dmitrii S. Pashin,
  • Dmitriy A. Rybin,
  • Andrey E. Schegolev,
  • Nikolay V. Klenov,
  • Igor I. Soloviev,
  • Anastasiya A. Gorchavkina and
  • Arkady M. Satanin

Beilstein J. Nanotechnol. 2022, 13, 653–665, doi:10.3762/bjnano.13.57

Graphical Abstract
  • rate of state localisation. Due to the tunneling effect, the wave function is redistributed from the left to the right local minimum of the potential profile (see Figure 2). Figure 7b,c clearly shows that the Wigner function has negative values due to the formation of a superposition state during
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Published 14 Jul 2022

Approaching microwave photon sensitivity with Al Josephson junctions

  • Andrey L. Pankratov,
  • Anna V. Gordeeva,
  • Leonid S. Revin,
  • Dmitry A. Ladeynov,
  • Anton A. Yablokov and
  • Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 582–589, doi:10.3762/bjnano.13.50

Graphical Abstract
  • counter can be made on their basis. We use the metastable quasi-equilibrium state of a Josephson junction, which, at low temperatures, is stable enough for thermal fluctuations and quantum tunneling, but can be easily destroyed by absorption of a single photon. We demonstrate few-photon sensitivity of our
  • , we used constant attenuators from 2 dB to 30 dB and a voltage-controlled room-temperature attenuator, preliminarily calibrated with a spectrum analyzer. We altered the power of the signal from high power, at which the photon-assisted tunneling steps are well pronounced in the I/V curve [23], to low
  • underestimated lifetime compared to a more accurate numerical calculation. Thus, the critical current at a temperature of 50 mK was determined as 8.586 μA. For this Ic value, the tunneling time as a function of the bias current was calculated, which is believed to be the reason that, below the crossover
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Published 04 Jul 2022

Investigation of electron-induced cross-linking of self-assembled monolayers by scanning tunneling microscopy

  • Patrick Stohmann,
  • Sascha Koch,
  • Yang Yang,
  • Christopher David Kaiser,
  • Julian Ehrens,
  • Jürgen Schnack,
  • Niklas Biere,
  • Dario Anselmetti,
  • Armin Gölzhäuser and
  • Xianghui Zhang

Beilstein J. Nanotechnol. 2022, 13, 462–471, doi:10.3762/bjnano.13.39

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  • with a scanning tunneling microscope. As the irradiation dose was increased, the cross-linked regions continued to grow and a large number of subnanometer voids appeared. Their equivalent diameter is 0.5 ± 0.2 nm and the areal density is ≈1.7 × 1017 m−2. Supported by classical molecular dynamics
  • simulations, we propose that these voids may correspond to free volumes inside a cross-linked monolayer. Keywords: carbon nanomembranes; electron-induced cross-linking; scanning tunneling microscopy; self-assembled monolayers; subnanometer pores; Introduction Electron-induced chemistry plays an essential
  • collision, rotational or vibrational transitions, electron attachment, electronic excitation, and ionization [4][5]. Oriented molecular layers on surfaces are particularly well suited for such studies as surface analytical tools, such as scanning tunneling microscopy (STM), allow for detailed observations
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Published 25 May 2022

Plasma modes in capacitively coupled superconducting nanowires

  • Alex Latyshev,
  • Andrew G. Semenov and
  • Andrei D. Zaikin

Beilstein J. Nanotechnol. 2022, 13, 292–297, doi:10.3762/bjnano.13.24

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  • term describes QPS effects in the first wire and γ1 defines the QPS amplitude (per unit wire length) in this wire. In simple terms, the last term in Equation 11 can be treated as a linear combination of creation () and annihilation () operators for the flux quantum Φ0 and accounts for tunneling of such
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Published 04 Mar 2022

Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes

  • Max Mennicken,
  • Sophia Katharina Peter,
  • Corinna Kaulen,
  • Ulrich Simon and
  • Silvia Karthäuser

Beilstein J. Nanotechnol. 2022, 13, 219–229, doi:10.3762/bjnano.13.16

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  • mechanism, that is, thermally activated hopping conduction in the case of Ru-terpyridine wire devices or sequential tunneling in nanoparticle-based devices. Furthermore, the conductance switching of nanoparticle-based devices upon 530 nm irradiation was attributed to plasmon-induced metal-to-ligand charge
  • current vs voltage behavior at voltages above 1 V pointing to a tunneling mechanism. Besides the obviously different conductance values, no electrical switching could be observed for the Ru(TP)2-complex wire devices and the multiple-Ru(MPTP)2–AuNP devices in contrast to the single-Ru(MPTP)2–AuNP devices
  • Fermi–Dirac distribution, and indicates a tunneling mechanism [33][34][35]. A tunneling mechanism has been observed for single-Ru(MPTP)2–AuNP devices as well [15]. TEM images of Ru(MPTP)2–AuNP assemblies point to a nanoparticle separation of about 4 nm corresponding to slightly intercalating ligand
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Published 15 Feb 2022

Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

  • Hiroya Tanaka,
  • Shinya Ohno,
  • Kazushi Miki and
  • Masatoshi Tanaka

Beilstein J. Nanotechnol. 2022, 13, 172–181, doi:10.3762/bjnano.13.12

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  • Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan 10.3762/bjnano.13.12 Abstract Thermal oxidation of Si(113) in a monolayer regime was investigated using high-temperature scanning tunneling microscopy (STM). Dynamic processes during thermal oxidation were examined in three
  • the literature. Initial oxidation processes were identified based on high-resolution STM images. Keywords: high-index Si surface; in situ measurement; oxidation; scanning tunneling microscopy (STM); Introduction High-index silicon surfaces have drawn considerable interest for their usefulness in
  • experimental challenge toward elucidating the dynamic processes in oxidation. For example, the formation processes of iron oxide nanoparticles have been studied in detail using state-of-the-art X-ray scattering methods [4]. As a complementary method, variable-temperature scanning tunneling microscopy (VT-STM
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Published 03 Feb 2022

Effect of lubricants on the rotational transmission between solid-state gears

  • Huang-Hsiang Lin,
  • Jonathan Heinze,
  • Alexander Croy,
  • Rafael Gutiérrez and
  • Gianaurelio Cuniberti

Beilstein J. Nanotechnol. 2022, 13, 54–62, doi:10.3762/bjnano.13.3

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  • situation becomes very different since a continuum description of the materials might not be sufficient. The development of the atomic force microscope (AFM) [19] and the scanning tunneling microscope (STM) [20][21] has allowed for visualization and manipulation of nanoscale gears [22]. Those gears can be
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Published 05 Jan 2022

Topographic signatures and manipulations of Fe atoms, CO molecules and NaCl islands on superconducting Pb(111)

  • Carl Drechsel,
  • Philipp D’Astolfo,
  • Jung-Ching Liu,
  • Thilo Glatzel,
  • Rémy Pawlak and
  • Ernst Meyer

Beilstein J. Nanotechnol. 2022, 13, 1–9, doi:10.3762/bjnano.13.1

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  • with functionalized tips. We report on the topographic signatures observed by scanning tunneling microscopy (STM) of carbon monoxide (CO) molecules, iron (Fe) atoms and sodium chloride (NaCl) islands deposited on superconducting Pb(111). For the CO adsorption a comparison with the Pb(110) substrate is
  • of iron atoms on top of the prototypical Pb(111) superconducting surface. Keywords: carbon monoxide (CO); lateral manipulation; NaCl; scanning tunneling microscopy; superconductivity; Introduction The most exciting manifestation of topological superconductivity [1][2][3] is the Majorana zero mode
  • scanning tunneling spectroscopy (STS) is a zero-bias conductance peak occurring at boundaries and defects. Unfortunately, other structural peculiarities can also mimic such zero-bias anomalies, which eventually leads to severe misinterpretations. Therefore, the latest advances in scanning tunneling
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Published 03 Jan 2022

Impact of electron–phonon coupling on electron transport through T-shaped arrangements of quantum dots in the Kondo regime

  • Patryk Florków and
  • Stanisław Lipiński

Beilstein J. Nanotechnol. 2021, 12, 1209–1225, doi:10.3762/bjnano.12.89

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  • ultrafast sensors, actuators, and signal processing components. Of special interest are molecular systems because molecules due to their softness easily deform during tunneling processes, giving rise to excitation of local phonon modes. The polaronic transport through molecular systems has been recently
  • studied in a number of papers [39][40][41][42][43][44]. Due to participation of localized phonons in single electron tunneling the phonon side bands appear in the spectral function of the dot. Interestingly, similar effects have been also observed in the rigid structures of semiconductor quantum dots
  • not only in sequential tunneling, but also in the Kondo regime where vibrational sidebands have been also observed [45][50][51][52][53][54]. The interplay of electron–phonon coupling and Kondo effect has been also studied theoretically [55][56][57][58][59][60]. In the present paper we analyze the
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Published 12 Nov 2021

Morphology-driven gas sensing by fabricated fractals: A review

  • Vishal Kamathe and
  • Rupali Nagar

Beilstein J. Nanotechnol. 2021, 12, 1187–1208, doi:10.3762/bjnano.12.88

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  • resulting in more interaction sites at which analyte and sensor can interact. The authors termed the mechanism “random tunneling junction network”. Here, electron transport across the fractal structures is assumed to occur via tunneling. Different fractal dimensions lead to different Schottky barrier
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Published 09 Nov 2021

Open-loop amplitude-modulation Kelvin probe force microscopy operated in single-pass PeakForce tapping mode

  • Gheorghe Stan and
  • Pradeep Namboodiri

Beilstein J. Nanotechnol. 2021, 12, 1115–1126, doi:10.3762/bjnano.12.83

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  • (PFT) mode. The topographical and electrical components were combined in a single pass by applying the electrical modulation only in between the PFT tip–sample contacts, when the AFM probe separates from the sample. In this way, any contact and tunneling discharges are avoided and, yet, the location of
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Published 06 Oct 2021

A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization

  • Adem Koçyiğit,
  • Adem Sarılmaz,
  • Teoman Öztürk,
  • Faruk Ozel and
  • Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

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  • -Si. The interfacial layer might increase the barrier height between the Au and p-Si. Characterization XRD patterns of the thiospinel CuNiCoS4 nanocrystals were recorded with a Bruker D8 diffractometer, Cu Kα radiation (λ = 0.15418 nm). A FEI TALOS F200S tunneling electron microscope (TEM) was used to
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Published 02 Sep 2021

Molecular assemblies on surfaces: towards physical and electronic decoupling of organic molecules

  • Sabine Maier and
  • Meike Stöhr

Beilstein J. Nanotechnol. 2021, 12, 950–956, doi:10.3762/bjnano.12.71

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  • these decoupling layers to the organic molecules and vice versa. This has the great advantage that these systems can still be examined by scanning tunneling microscopy (STM) and spectroscopy (STS), which gives insight into structural and electronic properties of individual molecules. For applications
  • such vertical tunneling through the interfacial layers can be undesirable since it prevents the current from flowing across electrode–molecule–electrode junctions [43] or leads to the charging of physisorbed molecules on top of such layers [18]. Hence, ultrathin insulating layers are often not
  • decoupling strategies mentioned above. Electronic decoupling significantly increases the lifetime of excited molecular states and improves the effective energy resolution (down to a few millielectronvolts) of molecular resonances observed in tunneling spectroscopy since the hybridization of molecular states
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Published 23 Aug 2021

Modification of a SERS-active Ag surface to promote adsorption of charged analytes: effect of Cu2+ ions

  • Bahdan V. Ranishenka,
  • Andrei Yu. Panarin,
  • Irina A. Chelnokova,
  • Sergei N. Terekhov,
  • Peter Mojzes and
  • Vadim V. Shmanai

Beilstein J. Nanotechnol. 2021, 12, 902–912, doi:10.3762/bjnano.12.67

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  • because of possible quantum tunneling effects [2]. The SERS in the “hot spots” suffers from those undesired effects even more because the analyte molecules have to be localized in a small volume in gaps between the NPs [4]. Thus, a principal challenge in using SERS for sensitive and nondestructive
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Published 16 Aug 2021

The role of convolutional neural networks in scanning probe microscopy: a review

  • Ido Azuri,
  • Irit Rosenhek-Goldian,
  • Neta Regev-Rudzki,
  • Georg Fantner and
  • Sidney R. Cohen

Beilstein J. Nanotechnol. 2021, 12, 878–901, doi:10.3762/bjnano.12.66

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  • was trained on simulated STEM images. Then, scanning tunneling microscopy (STM) images of the same sample were used to characterize the defects. STM images, which give the local density of states, measure not only the Si lattice, but also defect areas where this well-ordered lattice disappears. Such
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Published 13 Aug 2021
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