Sublattice asymmetry of impurity doping in graphene: A review

• James A. Lawlor and
• Mauro S. Ferreira

Beilstein J. Nanotechnol. 2014, 5, 1210–1217, doi:10.3762/bjnano.5.133

• of over 8%, where impurities are all on the same sublattice, will produce a band gap of around 550 meV far surpassing the minimum required for a CMOS [14][36] and finding that the band gap scales with concentration to the power 3/4, as shown in Figure 3. Even with a 4:1 doping ratio between

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

• Denis E. Presnov,
• Sergey V. Amitonov,
• Pavel A. Krutitskii,
• Valentina V. Kolybasova,
• Igor A. Devyatov,
• Vladimir A. Krupenin and
• Igor I. Soloviev

Beilstein J. Nanotechnol. 2013, 4, 330–335, doi:10.3762/bjnano.4.38

• , Moscow 119991, Russia Keldysh Institute of Applied Mathematics, Moscow 125047, Russia 10.3762/bjnano.4.38 Abstract Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented. Results: A maximum

• Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode. Conclusion: The sensitivity obtained for our sensor built in the CMOS-compatible top-down

• approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip. Keywords: charge/field sensor; field-effect transistor; nanowire; pH sensor; silicon-on-insulator

High-resolution electrical and chemical characterization of nm-scale organic and inorganic devices

• Pierre Eyben

Beilstein J. Nanotechnol. 2013, 4, 318–319, doi:10.3762/bjnano.4.35

• increase in “More than Moore” developments targeting energy (photovoltaic, energy storage), imaging (e.g., quantitative medical imaging), sensor/actuators linked to CMOS-base circuitry, biochips, etc. The utilization of graphene in order to process high mobility (both for holes and electrons) field-effect

Magnetic nanoparticles for biomedical NMR-based diagnostics

• Huilin Shao,
• Tae-Jong Yoon,
• Monty Liong,
• Ralph Weissleder and
• Hakho Lee

Beilstein J. Nanotechnol. 2010, 1, 142–154, doi:10.3762/bjnano.1.17

• generation and AD604 for NMR signal amplification; Analog Devices) and off-the-shelf RF components (e.g., ZAD-1 mixer, ZMSC-2 power splitter, and ZYSWA-2 RF switch; Mini-Circuits) [14]. In newer versions, these functionalities have been integrated onto a single CMOS IC chip [17][19]. This chip was designed

• the smaller magnet, this device incorporates a new RF transceiver fully integrated in the 0.18 μm CMOS. (Reproduced with permission from [14]. Copyright 2008 Nature Publishing Group. Reproduced with permission from [15]. Copyright 2009 National Academy of Sciences, USA. Reproduced with permission from