Routes to rupture and folding of graphene on rough 6H-SiC(0001) and their identification

• M. Temmen,
• O. Ochedowski,
• B. Kleine Bussmann,
• M. Schleberger,
• M. Reichling and
• T. R. J. Bollmann

Beilstein J. Nanotechnol. 2013, 4, 625–631, doi:10.3762/bjnano.4.69

• mechanically exfoliated under ambient conditions on 6H-SiC(0001) are modified by (i) swift heavy ion (SHI) irradiation, (ii) by a force microscope tip and (iii) by severe heating. The resulting surface topography and the surface potential are investigated with non-contact atomic force microscopy (NC-AFM) and

• ) measured by KPFM. Keywords: graphene; Kelvin probe force microscopy (KPFM), local contact potential difference (LCPD); non-contact atomic force microscopy (NC-AFM); SiC; Introduction Since its discovery in 2004 [1], graphene, the 2D crystal with a honeycomb lattice of sp2-bonded carbon atoms, has been

• various ways. The growth of graphene on metals followed by transfer to another substrate as well as epitaxial growth on SiC, both have a potential for mass production if technological shortcomings can be overcome. However, exfoliation from graphite still results in graphene flakes of highest quality [1][2

High-resolution electrical and chemical characterization of nm-scale organic and inorganic devices

• Pierre Eyben

Beilstein J. Nanotechnol. 2013, 4, 318–319, doi:10.3762/bjnano.4.35

• technology has exhibited some fundamental limitations in tackling the increasingly challenging issues of miniaturization and improvements in processing speed and power consumption. Hence, new inorganic semiconductor materials (Ge, InGaAs, InP, InSb, GaN, GaSb, SiC, etc.) and new architectures (multiple-gate

A look underneath the SiO₂/4H-SiC interface after N₂O thermal treatments

• Patrick Fiorenza,
• Filippo Giannazzo,
• Lukas K. Swanson,
• Alessia Frazzetto,
• Simona Lorenti,
• Mario S. Alessandrino and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2013, 4, 249–254, doi:10.3762/bjnano.4.26

• di Catania - Università degli Studi di Catania, Via Valdisavoia 9, 95123, Catania, Italy STMicroelectronics, Stadale Primosole 50, 95121, Catania, Italy 10.3762/bjnano.4.26 Abstract The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal

• treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). SSRM measurements on p-type 4H-SiC areas selectively exposed to N2O at 1150 °C showed an increased resistance compared to the unexposed ones; this indicates the

• incorporation of electrically active nitrogen-related donors, which compensate the p-type doping in the SiC surface region. Cross-sectional SCM measurements on SiO2/4H-SiC metal/oxide/semiconductor (MOS) devices highlighted different active carrier concentration profiles in the first 10 nm underneath the

Electronic and transport properties of kinked graphene

• Jesper Toft Rasmussen,
• Tue Gunst,
• Peter Bøggild,
• Antti-Pekka Jauho and
• Mads Brandbyge

Beilstein J. Nanotechnol. 2013, 4, 103–110, doi:10.3762/bjnano.4.12

• period and height on the order of 10 nm [12]. Recently, Hicks et al. [13] demonstrated how arrays of 1D large band gap, semiconducting graphene nanoribbons corresponding to a width of ≈1.4 nm can be formed in graphene on a step-patterned SiC substrate. The substrate interactions can clamp a graphene

• trenches by using heat treatment [15]. Thus, the sheet can obtain significant bends at certain places induced by the substrate interaction, substrate nanostructuring, and subsequent treatments [16]. Calculations by Low et al. [17] showed how a sharp step of height 1 nm in a SiC substrate, comparable to

Nanostructure-directed chemical sensing: The IHSAB principle and the dynamics of acid/base-interface interaction

• James L. Gole and
• William Laminack

Beilstein J. Nanotechnol. 2013, 4, 20–31, doi:10.3762/bjnano.4.3

• diameters varying from 0.8 to 1.5 µm and pore depths varying from 10 to 30 µm. The micropores provide a medium for Fickian diffusion to the surface nanoporous layer. Before the anodizations, an insulation layer of SiC (≈1000 angstroms) is coated onto the c-Si substrate by PEVCD methods. Windows of size 2

• × 5 mm are opened in this layer by Reactive Ion Etching (RIE). The SiC layer serves two purposes: SiC makes it possible to form the hybrid micro/nanoporous PS structure in the 2 × 5 mm windows during electrochemical anodization because of its resistance to HF. The SiC also aids the placement of gold

Nanotribology at high temperatures

• Saurav Goel,
• Alexander Stukowski,
• Gaurav Goel,
• Xichun Luo and
• Robert L. Reuben

Beilstein J. Nanotechnol. 2012, 3, 586–588, doi:10.3762/bjnano.3.68

• cycle” shown in Figure 1. This cycle involves the four elements carbon (C), boron (B), silicon (Si) and nitrogen (N). The combination of any two chemical species from this composition cycle produces a compound exhibiting ultra-high hardness, e.g., CBN, SiC, Si3N4, B4C and the recently recognized C3N4

Nano-FTIR chemical mapping of minerals in biological materials

• Sergiu Amarie,
• Paul Zaslansky,
• Yusuke Kajihara,
• Erika Griesshaber,
• Wolfgang W. Schmahl and
• Fritz Keilmann

Beilstein J. Nanotechnol. 2012, 3, 312–323, doi:10.3762/bjnano.3.35

• high rarefaction. We finally note that the observed particles are crystalline for two more reasons: (i) Their near-field scattering amplitude is about 10−3 as with calcite (Figure 3b and Figure 4), and not much smaller than 3 × 10−3 as known for two strongly polar crystals, SiC and SiO2 [3]; and (ii

• longitudinal phonon frequency amounts to 62 cm−1 for SiO2 [3], and even to 120 cm−1 for the exceptionally strong phonon of SiC [46]. For fluorapatite, infrared-active modes are known to be at 1030 cm−1 (strong), 1042.5 cm−1 (weak), and 1091 cm−1 (medium) [49], while nano-FTIR registers a strong resonance at

Graphite, graphene on SiC, and graphene nanoribbons: Calculated images with a numerical FM-AFM

• Fabien Castanié,
• Laurent Nony,
• Sébastien Gauthier and
• Xavier Bouju

Beilstein J. Nanotechnol. 2012, 3, 301–311, doi:10.3762/bjnano.3.34

• substrate, a graphene surface on a SiC substrate, and the edges of graphene nanoribbons, in frozen-atom and free-atom modes. Technical details of the numerical AFM (n-AFM) n-AFM in frequency-modulation mode The n-AFM simulates the behavior of a frequency-modulation AFM with parameters compatible with an

• graphene sheet on a Si-terminated 6H-SiC surface (5284 C atoms for the graphene sheet and three SiC layers for the substrate with 1332 Si and 1332 C atoms each giving in total a system of 13276 atoms). First, one has to consider the relaxation of the graphene layer with respect to the atomic structure of

• the substrate. By performing a full energy minimization of the system with DL_POLY-4 using periodic boundary conditions and with a Tersoff potential to connect the graphene and the SiC substrate, we found a buckling of the graphene sheet that is due to the incommensurability between the graphene and

Quantitative multichannel NC-AFM data analysis of graphene growth on SiC(0001)

• Christian Held,
• Thomas Seyller and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2012, 3, 179–185, doi:10.3762/bjnano.3.19

• representation of multichannel NC-AFM data sets in a quantitative fashion. Presentation and analysis are exemplified for topography and contact-potential data for graphene grown epitaxially on 6H-SiC(0001), as recorded by Kelvin probe force microscopy in ultrahigh vacuum. Sample preparations by thermal

• decomposition in ultrahigh vacuum and in an argon atmosphere are compared and the respective growth mechanisms discussed. Keywords: FM-AFM; graphene; 6H-SiC(0001); KPFM; SPM; Introduction Graphene grows epitaxially on the Si face of 6H-SiC(0001) by thermal decomposition in vacuum or an inert atmosphere

• investigate the growth mechanisms of graphene on SiC(0001). The carbon for graphene growth on SiC(0001) is obtained from thermal decomposition of the bulk substrate. Heating the sample to temperatures above 1100 °C leads to Si evaporation and to the formation of carbon-rich reconstructions [3]. At even higher

Enhancement of the critical current density in FeO-coated MgB₂ thin films at high magnetic fields

• Andrei E. Surdu,
• Hussein H. Hamdeh,
• Imad A. Al-Omari,
• David J. Sellmyer,
• Alexei V. Socrovisciuc,
• Andrei A. Prepelita,
• Ezgi T. Koparan,
• Ekrem Yanmaz,
• Valery V. Ryazanov,
• Horst Hahn and
• Anatolie S. Sidorenko

Beilstein J. Nanotechnol. 2011, 2, 809–813, doi:10.3762/bjnano.2.89

• SiC [5], nanodiamonds [6], etc. As we can conclude from these works, the highest value of the critical current in the zero magnetic field is Jc ~ 106 A/cm2 in a temperature range of 5–25 K, and the highest value at a magnetic field of 8 T is Jc ~ 104 A/cm2 at 4.2 K; no significant increase was

Formation of SiC nanoparticles in an atmospheric microwave plasma

• Martin Vennekamp,
• Ingolf Bauer,
• Matthias Groh,
• Evgeni Sperling,
• Susanne Ueberlein,
• Maksym Myndyk,
• Gerrit Mäder and
• Stefan Kaskel

Beilstein J. Nanotechnol. 2011, 2, 665–673, doi:10.3762/bjnano.2.71

• Dresden, Germany 10.3762/bjnano.2.71 Abstract We describe the formation of SiC nanopowder using an atmospheric argon microwave plasma with tetramethylsilane (TMS) as precursor. The impact of several process conditions on the particle size of the product is experimentally investigated. Particles with

• size is mainly influenced by the concentration of the precursor material in the plasma. Keywords: atmospheric microwave plasma; nanoparticle; SiC; Introduction Silicon Carbide (SiC) is a solid with various applications in materials science. It is used, e.g., as a wear-resistant material, as a

• heterogeneous catalyst, and in the production of semiconductors. There, SiC layers are deposited as low-k copper diffusion barriers by the application of organic precursors in plasma processes [1][2], and preventing the formation of SiC nanoparticles as a defect source is a challenge in this established

Ceria/silicon carbide core–shell materials prepared by miniemulsion technique

• Lars Borchardt,
• Martin Oschatz,
• Robert Frind,
• Emanuel Kockrick,
• Martin R. Lohe,
• Christoph P. Hauser,
• Clemens K. Weiss,
• Katharina Landfester,
• Bernd Büchner and
• Stefan Kaskel

Beilstein J. Nanotechnol. 2011, 2, 638–644, doi:10.3762/bjnano.2.67

• . Important requirements concerning these materials are chemical inertness and temperature stability. A material with high temperature stability, as well as excellent heat conductivity, hardness and mechanical stability is SiC [18]. Next to bulk SiC, also composites [19], porous [20][21][22][23][24][25], and

• polymeric precursors for the synthesis of SiC ceramics (polymer derived ceramics) [31][32] has been found to be an easy approach. Herein, we report the synthesis of nanosized silicon(oxy)carbide spheres by the miniemulsion technique with the aid of a polycarbosilane precursor. The first studies using this

• methacrylate (MMA) or acrylic acid. Furthermore the prevalent problem of sphere sintering during pyrolysis has been overcome by means of a coating procedure. In this contribution, we describe the functionalization of SiC spheres with ceria shells. Ceria is known as an oxidation catalyst for soot combustion

Intermolecular vs molecule–substrate interactions: A combined STM and theoretical study of supramolecular phases on graphene/Ru(0001)

• Michael Roos,
• Benedikt Uhl,
• Daniela Künzel,
• Harry E. Hoster,
• Axel Groß and
• R. Jürgen Behm

Beilstein J. Nanotechnol. 2011, 2, 365–373, doi:10.3762/bjnano.2.42

• PTCDA on graphene/Ru(0001). Comparison with the model of a single PTCDA molecule in Figure 2c reveals the same sub-molecular structural details within the molecule. Similar structural results have recently been reported for the adsorption of PTCDA on SiC(0001) where the PTCDA film is grown over the