Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• epitaxy [8] and vapour phase epitaxy [9] are commonly used and well-understood techniques for obtaining such nanostructures. Besides the mentioned methods, classic growth methods such as liquid phase epitaxy [10], laser beam sputtering [11], electron beam sputtering [12] and ion beam sputtering [13] are

• is employed to form nanostructured patterns on semiconductor surfaces [19]. And second, this effect was applied to stimulate nucleation nanoislands by ion-assisted molecular beam epitaxy [20]. It allowed the reduction of size and size dispersion of QDs. Earlier, we studied some features of

Ferromagnetic behaviour of ZnO: the role of grain boundaries

• Boris B. Straumal,
• Svetlana G. Protasova,
• Andrei A. Mazilkin,
• Eberhard Goering,
• Gisela Schütz,
• Petr B. Straumal and
• Brigitte Baretzky

Beilstein J. Nanotechnol. 2016, 7, 1936–1947, doi:10.3762/bjnano.7.185

• deposition (PLD), or magnetron sputtering [5][6][7][8][9]. However, the first disappointments also appeared immediately. Namely, single crystals, ceramics sintered from coarse-grained powders and single-crystalline films deposited by molecular beam epitaxy (MBE) were never ferromagnetic. Other synthesis

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

• Ann-Kathrin Kleinschmidt,
• Lars Barzen,
• Johannes Strassner,
• Christoph Doering,
• Henning Fouckhardt,
• Wolfgang Bock,
• Michael Wahl and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

• an established powerful method to monitor the epitaxial growth of monocrystalline semiconductor layers in situ [6][7] – for instance for molecular beam epitaxy (MBE). The RAS technique employs reflectometric as well as interferometric information, based on the difference in optical surface

• photon energy, the term RAS spectrum will be used. Due to the rotation of the substrates during epitaxy the software of the epitaxy-RAS instrumentation typically ignores the sign of the RAS signal. The time evolution of the spectrum of this RAS signal is called a false-color plot or short color plot (see

• contribution have been grown with molecular beam epitaxy (MBE) in a R450 MBE system from DCA Instruments Oy, Turku, Finland. Base and working pressure of the system are (8–9) × 10−10 hPa and (1–2) × 10−10 hPa, respectively. For the experiments concerning the accuracy of the etch depth determination, described

Filled and empty states of Zn-TPP films deposited on Fe(001)-p(1×1)O

• Gianlorenzo Bussetti,
• Alberto Calloni,
• Rossella Yivlialin,
• Andrea Picone,
• Federico Bottegoni and
• Marco Finazzi

Beilstein J. Nanotechnol. 2016, 7, 1527–1531, doi:10.3762/bjnano.7.146

• elsewhere [19], coupled to a chamber devoted to organic molecular beam epitaxy (OMBE). The OMBE chamber was designed and built in collaboration with 5Pascal srl. (via Boccaccio 108, 20090 Trezzano sul Naviglio, Milano, Italy). The OMBE system is equipped with four Knudsen cells, whose crucibles are

Viability and proliferation of endothelial cells upon exposure to GaN nanoparticles

• Tudor Braniste,
• Ion Tiginyanu,
• Tibor Horvath,
• Simion Raevschi,
• Serghei Cebotari,
• Marco Lux,
• Axel Haverich and
• Andres Hilfiker

Beilstein J. Nanotechnol. 2016, 7, 1330–1337, doi:10.3762/bjnano.7.124

• nanoparticles were synthesized on a sacrificial layer of zinc oxide (ZnO) nanoparticles using hydride vapor phase epitaxy. The uptake of GaN nanoparticles by porcine endothelial cells was strongly dependent upon whether they were fixed to the substrate surface or free floating in the medium. The endothelial

• epitaxy (HVPE) in two stages, as previously described [29]. Metallic gallium, ammonia (NH3) gas, hydrogen chloride (HCl) gas, and hydrogen (H2) were used as source materials and carrier gases. In the source zone, GaCl was formed as a result of chemical reactions between gaseous HCl and liquid Ga. GaCl and

Microscopic characterization of Fe nanoparticles formed on SrTiO₃(001) and SrTiO₃(110) surfaces

• Miyoko Tanaka

Beilstein J. Nanotechnol. 2016, 7, 817–824, doi:10.3762/bjnano.7.73

• a rectangle-on-rectangle relationship for fcc Ni on STO(110) surfaces, in which case the relation is (110)STO (110)Ni and [001]STO [001]Ni [25]. This epitaxy is more intuitive since the configuration is a tilted version of the well-known cube-on-cube relationship [47], and rectangular atomic

• former epitaxy exhibit the shape of a truncated pyramid while those with the latter epitaxy exhibit a hexagonal shape. Profile-view TEM observation revealed their height-to-length ratios, which in turn give the approximate value of the adhesion energy of each shape. The preference of each substrate for

Orientation of FePt nanoparticles on top of a-SiO₂/Si(001), MgO(001) and sapphire(0001): effect of thermal treatments and influence of substrate and particle size

• Martin Schilling,
• Paul Ziemann,
• Zaoli Zhang,
• Johannes Biskupek,
• Ute Kaiser and
• Ulf Wiedwald

Beilstein J. Nanotechnol. 2016, 7, 591–604, doi:10.3762/bjnano.7.52

• , 89069 Ulm, Germany Erich Schmid Institute of Materials Science, Jahnstrasse 12, 8700 Leoben, Austria Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany 10.3762/bjnano.7.52 Abstract Texture formation and epitaxy of thin metal

• pulsed laser deposition (PLD), served as reference samples. The structural properties were probed in situ, particularly texture formation and epitaxy of the specimens by reflection high-energy electron diffraction (RHEED) and, in case of 3 nm nanoparticles, additionally by high-resolution transmission

• transmission electron microscopy (HRTEM); nanoparticles; reflection high-energy electron diffraction (RHEED); solid-phase epitaxy; texture; Introduction Due to their attractive catalytic properties for oxygen reduction reactions (ORR) [1][2] as well as their high magnetocrystalline anisotropy energy density

Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

• Kuang-Yang Kou,
• Yu-En Huang,
• Chien-Hsun Chen and
• Shih-Wei Feng

Beilstein J. Nanotechnol. 2016, 7, 75–80, doi:10.3762/bjnano.7.9

• relaxation by microcrack formation, is also observed in the ZnO thin film grown by plasma-assisted molecular-beam epitaxy [10]. Therefore, for textured, ZnO@B TCO, the residual strain induced by the lattice mismatch and the difference of thermal expansion coefficient is relaxed, leading to an apparent

Calculations of helium separation via uniform pores of stanene-based membranes

• Guoping Gao,
• Yan Jiao,
• Yalong Jiao,
• Fengxian Ma,
• Liangzhi Kou and
• Aijun Du

Beilstein J. Nanotechnol. 2015, 6, 2470–2476, doi:10.3762/bjnano.6.256

• -dimension materials with an ideal pore size is desired for helium separation. As a new member of the family of layered materials following graphene, silicene and germanene, 2D stanene has been recently successfully fabricated by molecular beam epitaxy [14]. 2D stanene possesses a graphene-like honeycomb

Framework for automatic information extraction from research papers on nanocrystal devices

• Thaer M. Dieb,
• Masaharu Yoshioka,
• Shinjiro Hara and
• Marcus C. Newton

Beilstein J. Nanotechnol. 2015, 6, 1872–1882, doi:10.3762/bjnano.6.190

• , such as peak energy. Evaluation parameter value (EvPVal): Value of an evaluation parameter, such as 1.22 eV. Manufacturing method (MMethod): Method used in the experiment to achieve the desired product, such as selective-area metalorganic vapor-phase epitaxy. Target artifact or final product (TArtifact

Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

• Jose Alberto Alvarado,
• Arturo Maldonado,
• Héctor Juarez,
• Mauricio Pacio and
• Rene Perez

Beilstein J. Nanotechnol. 2015, 6, 971–975, doi:10.3762/bjnano.6.100

• , they can be used in many applications, such as gas sensors [4]. A wide range of techniques to deposit thin films are used, such as molecular beam epitaxy (MBE) [5], single-source chemical vapor deposition (SS CVD) [6], metalorganic chemical vapor deposition (MOCVD) [7], sol–gel [8], spray pyrolysis [9

Morphological and structural characterization of single-crystal ZnO nanorod arrays on flexible and non-flexible substrates

• Omar F. Farhat,
• Mohd M. Halim,
• Mat J. Abdullah,
• Mohammed K. M. Ali and
• Nageh K. Allam

Beilstein J. Nanotechnol. 2015, 6, 720–725, doi:10.3762/bjnano.6.73

• (CVD) [7], molecular beam epitaxy (MBE) [8], pulsed laser deposition (PLD) [9], vapor phase transport (VPT) [10], and thermal evaporation [11]. However, these methods are considered to be high-cost techniques since they require complex, expensive equipment, high vacuum conditions and high operation

Synthesis, characterization, monolayer assembly and 2D lanthanide coordination of a linear terphenyl-di(propiolonitrile) linker on Ag(111)

• Zhi Chen,
• Svetlana Klyatskaya,
• José I. Urgel,
• David Écija,
• Olaf Fuhr,
• Willi Auwärter,
• Johannes V. Barth and
• Mario Ruben

Beilstein J. Nanotechnol. 2015, 6, 327–335, doi:10.3762/bjnano.6.31

• (NC–C≡C–Ph3–C≡C–CN) was deposited by organic molecular beam epitaxy onto an atomically clean and flat Ag(111) surface kept at 300 K. After the deposition, the samples were cooled down to about 6 K for imaging. Similar to earlier studies on the terphenyl-dicarbonitrile analog 1 [43], the individual

• the remarkable coordination reactivity of carbonitrile groups, which are very well known in bulk coordination chemistry. The linker 2 was deposited by organic molecular beam epitaxy onto an atomically clean and flat Ag(111) surface kept at 300 K, followed by the controlled co-deposition of Gd atoms

• ≡C–CN (2) were deposited from a quartz crucible held at T = 479 K by organic molecular beam epitaxy (OMBE) onto a clean Ag(111) crystal held at ≈300 K. Subsequently, Gd atoms were sublimated by means of electron beam evaporation from an outgassed Gd rod (99.9%, MaTecK GmbH, 52428 Jülich, Germany

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

• D. J. Lockwood,
• N. L. Rowell,
• A. Benkouider,
• A. Ronda,
• L. Favre and
• I. Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2498–2504, doi:10.3762/bjnano.5.259

• Marseille Cedex 20, France 10.3762/bjnano.5.259 Abstract We report on the optical properties of SiGe nanowires (NWs) grown by molecular beam epitaxy (MBE) in ordered arrays on SiO2/Si(111) substrates. The production method employs Au catalysts with self-limited sizes deposited in SiO2-free sites opened-up

• positioned [28]. We have evolved an efficient and simple electrochemical process that joins focused-ion-beam (FIB) lithography and galvanic reaction to selectively prepare gold nanoparticles in well-defined locations. Afterwards these nanoparticles are used for the molecular beam epitaxy (MBE) growth of

Si/Ge intermixing during Ge Stranski–Krastanov growth

• Alain Portavoce,
• Khalid Hoummada,
• Antoine Ronda,
• Dominique Mangelinck and
• Isabelle Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2374–2382, doi:10.3762/bjnano.5.246

• ) the composition of large Ge dome islands grown by gas-source molecular beam epitaxy (GS-MBE) and buried under a Si cap [36]. APT measurements show that these islands are made of a more Ge-rich core (≈55 atom % Ge) and an increasingly Ge-deficient shell (≈15 atom % Ge). Despite the strong Si/Ge

Nanometer-resolved mechanical properties around GaN crystal surface steps

• Jörg Buchwald,
• Marina Sarmanova,
• Bernd Rauschenbach and
• Stefan G. Mayr

Beilstein J. Nanotechnol. 2014, 5, 2164–2170, doi:10.3762/bjnano.5.225

• substrate by ion beam-assisted molecular beam epitaxy [24]. Measurements for the elastic properties of the GaN film were performed by a CR-AFM, that was custom-built into a commercial Asylum Research MFP-3D AFM [25]. The AFM probe used for CR-AFM imaging was a Si PPP-NCLR (NanoSensors, Switzerland) with a

Electronic and electrochemical doping of graphene by surface adsorbates

• Hugo Pinto and
• Alexander Markevich

Beilstein J. Nanotechnol. 2014, 5, 1842–1848, doi:10.3762/bjnano.5.195

• Dirac point and the Fermi level shows that approximately one electron is transferred per adsorbed K atom. The doping properties were also explored for different transition metal clusters (Ti, Fe and Pt) deposited on graphene by molecular beam epitaxy (MBE) [30]. The Ti and Fe metal clusters were found

Topology assisted self-organization of colloidal nanoparticles: application to 2D large-scale nanomastering

• Hind Kadiri,
• Serguei Kostcheev,
• Daniel Turover,
• Rafael Salas-Montiel,
• Komla Nomenyo,
• Anisha Gokarna and
• Gilles Lerondel

Beilstein J. Nanotechnol. 2014, 5, 1203–1209, doi:10.3762/bjnano.5.132

• (“bottom up” approach). Many articles have reported the grapho-epitaxy of self-assembled block copolymers on two-dimensional periodically patterned templates with an aim to control the orientation of the structures [19][20]. The network obtained by the self-organization of copolymer is polycrystalline and

• contains defects that limit its application. The purpose of using patterned substrates is to control these defects and obtain a single crystal structure on a large scale, however, this technique (grapho-epitaxy) works well only on a small scale. In this study, we concentrated on topology-assisted self

Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

• Federico Baiutti,
• Georg Christiani and
• Gennady Logvenov

Beilstein J. Nanotechnol. 2014, 5, 596–602, doi:10.3762/bjnano.5.70

• Federico Baiutti Georg Christiani Gennady Logvenov Max-Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569, Stuttgart, Germany 10.3762/bjnano.5.70 Abstract In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently

• structural defects, with the aim of tailoring their functional properties by precise defects control. Keywords: artificial superlattices; complex oxides; defect chemistry; interface effects; molecular beam epitaxy; Introduction The progress in the synthesis of layered complex oxide compounds with high

Encapsulation of nanoparticles into single-crystal ZnO nanorods and microrods

• Jinzhang Liu,
• Marco Notarianni,
• Llew Rintoul and
• Nunzio Motta

Beilstein J. Nanotechnol. 2014, 5, 485–493, doi:10.3762/bjnano.5.56

• , but also other functional crystals grown by the epitaxy process. Micro-PL measurements on a single ZnO nanorod containing luminescent NDs demonstrates that the light emission from NDs can be coupled to the nanorod cavity, resulting in shift of the PL emission peak and change of the PL spectrum shape

Adsorption of the ionic liquid [BMP][TFSA] on Au(111) and Ag(111): substrate effects on the structure formation investigated by STM

• Benedikt Uhl,
• Florian Buchner,
• Dorothea Alwast,
• Nadja Wagner and
• R. Jürgen Behm

Beilstein J. Nanotechnol. 2013, 4, 903–918, doi:10.3762/bjnano.4.102

• at the elbow sites as compared to the other surface areas, similar to findings for metal epitaxy, e.g., Ni/Au(111) [33], or adsorption of large molecules such as porphyrin molecules [34]. The (short-range) ordering of the adsorbates in the islands was checked by calculating a Fourier transformation

Site-selective growth of surface-anchored metal-organic frameworks on self-assembled monolayer patterns prepared by AFM nanografting

• Tatjana Ladnorg,
• Alexander Welle,
• Stefan Heißler,
• Christof Wöll and
• Hartmut Gliemann

Beilstein J. Nanotechnol. 2013, 4, 638–648, doi:10.3762/bjnano.4.71

• -epitaxial layer-by-layer method (liquid-phase epitaxy, or LPE). The chemical termination of the supporting substrate is crucial, because the most convenient method for substrate modification is the formation of a suitable self-assembled monolayer. The choice of a particular SAM also allows for control over

Digging gold: keV He⁺ ion interaction with Au

• Vasilisa Veligura,
• Gregor Hlawacek,
• Robin P. Berkelaar,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2013, 4, 453–460, doi:10.3762/bjnano.4.53

• , sputter erosion and atom deposition are similar processes. A continuum model for the mound formation in molecular beam epitaxy (MBE) predicts a coarsening exponent of 0.25 [21], which is very close to the measured values. The pattern exhibits a preferential orientation along the direction (Figure 2d and

Tuning the properties of magnetic thin films by interaction with periodic nanostructures

• Ulf Wiedwald,
• Felix Haering,
• Stefan Nau,
• Carsten Schulze,
• Herbert Schletter,
• Denys Makarov,
• Alfred Plettl,
• Karsten Kuepper,
• Manfred Albrecht,
• Johannes Boneberg and
• Paul Ziemann

Beilstein J. Nanotechnol. 2012, 3, 831–842, doi:10.3762/bjnano.3.93

• the magnetic behavior of the percolated film is discussed in the following sections. After preparation, the Au particle assemblies were introduced in a molecular beam epitaxy (MBE) chamber equipped with an e-beam evaporator loaded with Co and Pt (purity greater than 99.99%). The multilayer stack [Co

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• achieve NWs with tailored properties, namely chemical vapor deposition (CVD) [11], metal–organic CVD [12], molecular-beam epitaxy [13] and laser ablation techniques [14]. In this work we focus on the well-established VLS growth mechanism [15][16], which has shown remarkable potential in the fabrication of

• , nucleates the growth of a Si-NW. In previous work [17] we investigated the crucial importance of substrate preparation in the case of Au-catalysed NWs grown by the VLS mechanism. Removal of silicon oxide shortly before catalyst deposition proved to be decisive for achieving epitaxy and crystallinity. The

• , enabling accurate and fast placement of the samples at desired temperatures without breaking the vacuum. It turned out that annealing of the samples for 30 min at 800 °C prior to growth improved epitaxy considerably. After this pre-annealing, OCTS was introduced into the growth atmosphere with a partial