Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

• Thomas H. Loeber,
• Dirk Hoffmann and
• Henning Fouckhardt

Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39

• substrates with an R450 molecular beam epitaxy (MBE) system from DCA Oy, Finland. The flux was determined by beam equivalent pressures (BEP) for all source materials. The partial Ga pressure was kept nearly constant between ≈1.60 and ≈1.89 × 10−7 hPa, for each individual growth process. Depending on the