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Search for "phonons" in Full Text gives 79 result(s) in Beilstein Journal of Nanotechnology.

Controlled graphene oxide assembly on silver nanocube monolayers for SERS detection: dependence on nanocube packing procedure

  • Martina Banchelli,
  • Bruno Tiribilli,
  • Roberto Pini,
  • Luigi Dei,
  • Paolo Matteini and
  • Gabriella Caminati

Beilstein J. Nanotechnol. 2016, 7, 9–21, doi:10.3762/bjnano.7.2

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  • characteristic GO bands centred at 1601 cm−1 (G band) and at 1365 cm−1 (D band), and corresponding to the tangential stretching mode of the E2g phonon of sp2 atoms and to the breathing mode of κ-point phonons [59], respectively, dominate the Raman shift region between 1200 and 1700 cm−1 of the hybrid substrates
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Published 06 Jan 2016

Probing the local environment of a single OPE3 molecule using inelastic tunneling electron spectroscopy

  • Riccardo Frisenda,
  • Mickael L. Perrin and
  • Herre S. J. van der Zant

Beilstein J. Nanotechnol. 2015, 6, 2477–2484, doi:10.3762/bjnano.6.257

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  • , and a phonon with the same energy is created. In the case of a small inelastic current, the vibrationally excited molecule then returns to its ground state typically before the excitation of a new vibration by a subsequent electron. The excess energy is converted to phonons in the electrodes and/or
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Published 24 Dec 2015

Surface-enhanced Raman scattering by colloidal CdSe nanocrystal submonolayers fabricated by the Langmuir–Blodgett technique

  • Alexander G. Milekhin,
  • Larisa L. Sveshnikova,
  • Tatyana A. Duda,
  • Ekaterina E. Rodyakina,
  • Volodymyr M. Dzhagan,
  • Ovidiu D. Gordan,
  • Sergey L. Veber,
  • Cameliu Himcinschi,
  • Alexander V. Latyshev and
  • Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2015, 6, 2388–2395, doi:10.3762/bjnano.6.245

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  • 10.3762/bjnano.6.245 Abstract We present the results of an investigation of surface-enhanced Raman scattering (SERS) by optical phonons in colloidal CdSe nanocrystals (NCs) homogeneously deposited on both arrays of Au nanoclusters and Au dimers using the Langmuir–Blodgett technique. The coverage of the
  • deposited NCs was less than one monolayer, as determined by transmission and scanning electron microscopy. SERS by optical phonons in CdSe nanocrystals showed a significant enhancement that depends resonantly on the Au nanocluster and dimer size, and thus on the localized surface plasmon resonance (LSPR
  • ; localized surface plasmon resonance; metal nanoclusters; phonons; surface-enhanced Raman spectroscopy; Introduction Since its observation in 1974 [1], surface-enhanced Raman scattering (SERS) has become a powerful technique for detecting and studying ultra-low quantities of organic and biological
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Published 14 Dec 2015

Influence of wide band gap oxide substrates on the photoelectrochemical properties and structural disorder of CdS nanoparticles grown by the successive ionic layer adsorption and reaction (SILAR) method

  • Mikalai V. Malashchonak,
  • Alexander V. Mazanik,
  • Olga V. Korolik,
  • Еugene А. Streltsov and
  • Anatoly I. Kulak

Beilstein J. Nanotechnol. 2015, 6, 2252–2262, doi:10.3762/bjnano.6.231

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  • /CdS, and In2O3/CdS heterostructures The Raman spectra of ZnO/CdS, TiO2/CdS, and In2O3/CdS films are shown in Figure 5. In the studied range of Raman shifts, the band at ≈300 cm−1 corresponded to scattering by CdS longitudinal optical (LO) phonons [20] and also two of its overtones (≈600 and ≈900 cm−1
  • factors: phonon confinement leading to relaxation of the k = 0 selection rule for single-phonon scattering (k is a phonon wavevector) and an asymmetric low-energy LO band broadening [22]; scattering by disorder-activated zone-edge (DAZE) phonons [23]; or scattering by surface optical (SO) phonons [24]. As
  • is known, the influence of phonon confinement on the line shape in Raman spectra increases with dispersion, ω(k), of optical phonons. For CdS, where the LO phonon frequency ω slightly depends on the wavevector, the impact of phonon confinement on the shape of spectral lines becomes significant only
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Published 30 Nov 2015

A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials

  • Daniela Lehr,
  • Markus R. Wagner,
  • Johanna Flock,
  • Julian S. Reparaz,
  • Clivia M. Sotomayor Torres,
  • Alexander Klaiber,
  • Thomas Dekorsy and
  • Sebastian Polarz

Beilstein J. Nanotechnol. 2015, 6, 2161–2172, doi:10.3762/bjnano.6.222

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  • longitudinal optical phonon–plasmon coupling and describes the interaction of collective oscillating free carriers (plasmons) with LO phonons [80]. Consequently, the concentration of free carriers increases with Cl doping. The dielectric properties of thin ZnO1−xClx pellets were investigated with impedance
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Published 18 Nov 2015

Nonconservative current-driven dynamics: beyond the nanoscale

  • Brian Cunningham,
  • Tchavdar N. Todorov and
  • Daniel Dundas

Beilstein J. Nanotechnol. 2015, 6, 2140–2147, doi:10.3762/bjnano.6.219

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  • refer to it generically as the waterwheel effect. Here the connection between the waterwheel effect and the stimulated directional emission of phonons propagating along the electron flow is discussed in an intuitive manner. Nonadiabatic molecular dynamics show that waterwheel modes self-regulate by
  • winds generate forward-travelling ripples on a lake, or the uncompensated stimulated emission of directional phonons [12][15]. However, this process hinges on momentum conservation, and for waves, this information requires a sufficiently long-ranged physical property. For atomic motion under current
  • for longitudinal phonons in a chain with 200 mobile atoms of mass M = 10 amu. The 200 eigenvalues {kj} of the 200 × 200 dynamical response matrix give rise to 2 × 200 eigenfrequencies: positive and negative square roots of the eigenvalues divided by mass, ωj = . Each eigenvector of the dynamical
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Published 13 Nov 2015

Thermoelectricity in molecular junctions with harmonic and anharmonic modes

  • Bijay Kumar Agarwalla,
  • Jian-Hua Jiang and
  • Dvira Segal

Beilstein J. Nanotechnol. 2015, 6, 2129–2139, doi:10.3762/bjnano.6.218

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  • transport characteristics across the junction, mediated by molecular vibrational modes. Consideration of the phononic thermal conductance κph is particularly important for a reliable estimate of ZT, as the thermal conductance Σ should include contributions from both electrons and phonons. We now estimate
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Published 11 Nov 2015

Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires

  • Suvankar Das,
  • Amitava Moitra,
  • Mishreyee Bhattacharya and
  • Amlan Dutta

Beilstein J. Nanotechnol. 2015, 6, 1970–1977, doi:10.3762/bjnano.6.201

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  • composite system. In the same way, the presence of an interface modulates the state of phonons in these nanowires and the analytical estimation of the net thermal expansion by conventional thermo-mechanical theory becomes unfeasible. In view of these difficulties, atomistic simulations have been employed to
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Published 02 Oct 2015

Large-voltage behavior of charge transport characteristics in nanosystems with weak electron–vibration coupling

  • Tomáš Novotný and
  • Wolfgang Belzig

Beilstein J. Nanotechnol. 2015, 6, 1853–1859, doi:10.3762/bjnano.6.188

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  • coupling regime only but which would use simplified (semi)analytical formulas for the IETS features with non-equilibrated phonons. It turns out that there are two methods yielding inconsistent results, namely a paper by Urban et al. [18] and a study by us [19] for the inelastic current noise extended by
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Published 03 Sep 2015

Enhancing the thermoelectric figure of merit in engineered graphene nanoribbons

  • Hatef Sadeghi,
  • Sara Sangtarash and
  • Colin J. Lambert

Beilstein J. Nanotechnol. 2015, 6, 1176–1182, doi:10.3762/bjnano.6.119

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  • Fourier’s law, where q is the heat flux, κ = κpl + κe is the thermal conductance due to phonons (κpl) and electrons (κe) and is the temperature gradient [1]. Nanostructures show significantly different thermal properties than bulk crystals in which acoustic phonons are the main heat carriers. The reasons
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Published 18 May 2015

Combination of surface- and interference-enhanced Raman scattering by CuS nanocrystals on nanopatterned Au structures

  • Alexander G. Milekhin,
  • Nikolay A. Yeryukov,
  • Larisa L. Sveshnikova,
  • Tatyana A. Duda,
  • Ekaterina E. Rodyakina,
  • Victor A. Gridchin,
  • Evgeniya S. Sheremet and
  • Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2015, 6, 749–754, doi:10.3762/bjnano.6.77

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  • str. 2, Novosibirsk 630090, Russia Novosibirsk State Technical University, pr. Karl Marx, 20, Novosibirsk, 630092, Russia Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz, Germany 10.3762/bjnano.6.77 Abstract We present the results of a Raman study of optical phonons in CuS
  • advantages of SERS and IERS and demonstrate stronger SERS enhancement allowing for the observation of Raman signals from CuS NCs with an ultra-low areal density. Keywords: copper sulfide (CuS) nanocrystals; interference-enhanced Raman spectroscopy; phonons; surface-enhanced Raman spectroscopy; Introduction
  • sensitivity as shown for several semiconductor NC types [1][2][3][4][5][6][7][8][9][10][11][12][13]. The SERS effect by longitudinal optical (LO) phonons of CdS in Ag–CdS composite nanoparticles in solution and on a solid substrate was demonstrated [1][2]. Resonant SERS enhancement by LO phonons of CdSe was
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Published 17 Mar 2015

Morphological and structural characterization of single-crystal ZnO nanorod arrays on flexible and non-flexible substrates

  • Omar F. Farhat,
  • Mohd M. Halim,
  • Mat J. Abdullah,
  • Mohammed K. M. Ali and
  • Nageh K. Allam

Beilstein J. Nanotechnol. 2015, 6, 720–725, doi:10.3762/bjnano.6.73

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  • , acoustic modes with Aacoustic = A1 + E, and optical modes with Ooptical = A1 + (2 × B1) + E1 + (2 × E1). The A and E modes are polar and split into transverse optical (TO) and longitudinal optical (LO) phonons while the B modes are silent modes. According to the selection rules, E1, E2 and LO are Raman
  • active, while the E and TO are forbidden. Due to the long-range electrostatic forces, the phonons with A1 and E symmetry are polar and hence exhibit different frequencies for the TO and LO phonons. Every mode corresponds to a band in the Raman spectrum, with the A1 phonon vibration polarized parallel to
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Published 12 Mar 2015

Structural, optical, opto-thermal and thermal properties of ZnS–PVA nanofluids synthesized through a radiolytic approach

  • Alireza Kharazmi,
  • Nastaran Faraji,
  • Roslina Mat Hussin,
  • Elias Saion,
  • W. Mahmood Mat Yunus and
  • Kasra Behzad

Beilstein J. Nanotechnol. 2015, 6, 529–536, doi:10.3762/bjnano.6.55

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  • explained by means of modification and breakdown in the chain structure of PVA upon gamma irradiation, as previously explained by FTIR results. According to [30], the principle of heat transport is explained by phonons where k can be written as follows [31]: where ρ is the density, Cp is the specific heat
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Published 23 Feb 2015

Raman spectroscopy as a tool to investigate the structure and electronic properties of carbon-atom wires

  • Alberto Milani,
  • Matteo Tommasini,
  • Valeria Russo,
  • Andrea Li Bassi,
  • Andrea Lucotti,
  • Franco Cataldo and
  • Carlo S. Casari

Beilstein J. Nanotechnol. 2015, 6, 480–491, doi:10.3762/bjnano.6.49

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  • ]. This apparent contradiction can be solved by relaxing the infinite chain model. While only phonons at Γ have non-negligible Raman activity for an infinite polymer, for finite chains, vibrations located on the LO branch at different points of the 1st Brillouin zone can also be Raman active, due to end
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Published 17 Feb 2015

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

  • Jacques Perrin Toinin,
  • Alain Portavoce,
  • Khalid Hoummada,
  • Michaël Texier,
  • Maxime Bertoglio,
  • Sandrine Bernardini,
  • Marco Abbarchi and
  • Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

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  • wavelengths (red–green). Si and Ge are indirect gap materials, requiring phonon scattering for optical absorption/emission to take place. However, Q-size effects present in porous semiconductors can promote optical transitions without the need of phonons by breaking the momentum conservation rules and/or by
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Published 30 Jan 2015

Silicon and germanium nanocrystals: properties and characterization

  • Ivana Capan,
  • Alexandra Carvalho and
  • José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

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  • Si such transitions are rather unlikely to take place as the large k-space mismatch between conduction band minimum and valence band maximum states implies the involvement of phonons. On the other hand, the dispersionless and tunable nature of the electronic structure of Si NCs holds many promises in
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Published 16 Oct 2014

Numerical investigation of the effect of substrate surface roughness on the performance of zigzag graphene nanoribbon field effect transistors symmetrically doped with BN

  • Majid Sanaeepur,
  • Arash Yazdanpanah Goharrizi and
  • Mohammad Javad Sharifi

Beilstein J. Nanotechnol. 2014, 5, 1569–1574, doi:10.3762/bjnano.5.168

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  • -lattices [25]. BN-doped ZGNRs may be used as a channel material for nanometer-sized conventional field effect transistors. Although the one-atom thick nature of GNRs makes them highly sensitive to their environmental surroundings, for example, the substrate material, phonons from the substrate and charged
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Published 17 Sep 2014

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

  • Pia Sundberg and
  • Maarit Karppinen

Beilstein J. Nanotechnol. 2014, 5, 1104–1136, doi:10.3762/bjnano.5.123

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Published 22 Jul 2014

Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

  • Claudio Davet Gutiérrez-Lazos,
  • Mauricio Ortega-López,
  • Manuel A. Pérez-Guzmán,
  • A. Mauricio Espinoza-Rivas,
  • Francisco Solís-Pomar,
  • Rebeca Ortega-Amaya,
  • L. Gerardo Silva-Vidaurri,
  • Virginia C. Castro-Peña and
  • Eduardo Pérez-Tijerina

Beilstein J. Nanotechnol. 2014, 5, 881–886, doi:10.3762/bjnano.5.100

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  • technique to assess the structure of semiconductors also at the nanometer-scale. In particular, Raman spectroscopy is sensitive to size effects, because like the excitons, phonons experience quantum confinement effects depending on the crystal size. In CdTe, the quantum confinement effect is revealed by the
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Published 20 Jun 2014

Challenges in realizing ultraflat materials surfaces

  • Takashi Yatsui,
  • Wataru Nomura,
  • Fabrice Stehlin,
  • Olivier Soppera,
  • Makoto Naruse and
  • Motoichi Ohtsu

Beilstein J. Nanotechnol. 2013, 4, 875–885, doi:10.3762/bjnano.4.99

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  • substrate were deposited at the same rate in the absence of DPPs. We note that DPPs were not generated near the bottom of the scratches because the substrate material around this area did not have dimensions at the nanometer-scale, and thus coherent phonons could not be excited. Deposition at the ridges was
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Published 11 Dec 2013

Structural and thermoelectric properties of TMGa3 (TM = Fe, Co) thin films

  • Sebastian Schnurr,
  • Ulf Wiedwald,
  • Paul Ziemann,
  • Valeriy Y. Verchenko and
  • Andrei V. Shevelkov

Beilstein J. Nanotechnol. 2013, 4, 461–466, doi:10.3762/bjnano.4.54

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  • conclusion on the amorphous state of the presently discussed films has immediate implications on their thermoelectric behavior. First of all, the scattering of electrons is dominated by the static disorder rather than by phonons. As a consequence, phonon drag effects, which usually are responsible for strong
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Published 31 Jul 2013

Photoelectrochemical and Raman characterization of In2O3 mesoporous films sensitized by CdS nanoparticles

  • Mikalai V. Malashchonak,
  • Sergey K. Poznyak,
  • Eugene A. Streltsov,
  • Anatoly I. Kulak,
  • Olga V. Korolik and
  • Alexander V. Mazanik

Beilstein J. Nanotechnol. 2013, 4, 255–261, doi:10.3762/bjnano.4.27

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  • ≈270 cm−1 can be associated with CdS surface phonons [14]. The peaks at ≈242 cm−1, ≈318 cm−1 and ≈342 cm−1 are not characteristic of In2O3 (which has Raman modes at approximately 308, 365, 504 and 637 cm−1 [15][16]) and are not observed for the In2O3 substrate without deposited CdS. The presence of
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Published 11 Apr 2013

Pure hydrogen low-temperature plasma exposure of HOPG and graphene: Graphane formation?

  • Baran Eren,
  • Dorothée Hug,
  • Laurent Marot,
  • Rémy Pawlak,
  • Marcin Kisiel,
  • Roland Steiner,
  • Dominik M. Zumbühl and
  • Ernst Meyer

Beilstein J. Nanotechnol. 2012, 3, 852–859, doi:10.3762/bjnano.3.96

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  • of graphite consists of D and G peaks, around 1350 cm−1 and 1585 cm−1 respectively, which arise from vibrations of sp2-hybridized carbon atoms [23][24][25][26]. The D peak is caused by breathing-like modes corresponding to transverse optical phonons near the K point of the Brillouin zone. It is an
  • 2671 cm−1 for single-layer graphene) [25]. The G peak represents the optical E2g phonons at the center of the Brillouin zone. The cross-section for the C–C sp3 vibrations, when available, is negligible for visible excitation. Upon hydrogen plasma exposure of single-layer graphene (Figure 1c, 2nd panel
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Published 13 Dec 2012

Nano-FTIR chemical mapping of minerals in biological materials

  • Sergiu Amarie,
  • Paul Zaslansky,
  • Yusuke Kajihara,
  • Erika Griesshaber,
  • Wolfgang W. Schmahl and
  • Fritz Keilmann

Beilstein J. Nanotechnol. 2012, 3, 312–323, doi:10.3762/bjnano.3.35

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  • phase effect is on the order of 30° for strong polymer vibrations [8][9] but on the order of 400° for strong crystal phonons [3][6]. For molluscs the employment of phosphate in shell architecture has not been reported, but the radula (tooth structure) of the chitons is known to contain calcium phosphate
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Published 05 Apr 2012

Current-induced dynamics in carbon atomic contacts

  • Jing-Tao Lü,
  • Tue Gunst,
  • Per Hedegård and
  • Mads Brandbyge

Beilstein J. Nanotechnol. 2011, 2, 814–823, doi:10.3762/bjnano.2.90

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  • thermodynamic equilibrium, ξ is characterized by a temperature and is related to Πr by the fluctuation-dissipation theorem. Note that in general x, F, and ξ are vectors and Πr is a matrix. This method was used by Wang and co-workers [28][29] to describe thermal transport in the quantum limit, with phonons in
  • linearly coupled harmonic phonon bath is similar, and was given in [28]. Alternatively, the dynamics of some external phonons, not coupling to the electrons directly, may be treated explicitly in actual MD calculations, as we illustrate below (regions DL, DR in Figure 6a). The electron–phonon coupling
  • + 1) is the Fermi-Dirac distribution function. We thus treat the nonequilibrium electron system as a reservoir unperturbed by the phonons. Using the nonequilibrium Greens function (NEGF) technique [36], we may write the 2nd lowest orders in M of as, The first term yields a constant force due to the
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