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Search for "reactive ion etching" in Full Text gives 62 result(s) in Beilstein Journal of Nanotechnology.

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator

  • Denis E. Presnov,
  • Sergey V. Amitonov,
  • Pavel A. Krutitskii,
  • Valentina V. Kolybasova,
  • Igor A. Devyatov,
  • Vladimir A. Krupenin and
  • Igor I. Soloviev

Beilstein J. Nanotechnol. 2013, 4, 330–335, doi:10.3762/bjnano.4.38

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  • and contact pads. Aluminium mask e-beam vapour deposition. Anisotropic reactive ion etching of the device layer through the Al mask and mask removal. Magnetron sputtering of titanium electrodes and their isolation with silica to allow measurements in liquids. Both optical and electron-beam lithography
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Published 28 May 2013

Grating-assisted coupling to nanophotonic circuits in microcrystalline diamond thin films

  • Patrik Rath,
  • Svetlana Khasminskaya,
  • Christoph Nebel,
  • Christoph Wild and
  • Wolfram H.P. Pernice

Beilstein J. Nanotechnol. 2013, 4, 300–305, doi:10.3762/bjnano.4.33

Graphical Abstract
  • thin film by reactive ion etching (RIE) on an Oxford 80 system. We use oxygen/argon chemistry at high bias voltage in order to obtain highly anisotropic etching. Typical etch rates are around 25 nm/min, allowing us to precisely reach a desired etch depth. A false-colour SEM image of a typical ridge
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Published 07 May 2013

Nanostructure-directed chemical sensing: The IHSAB principle and the dynamics of acid/base-interface interaction

  • James L. Gole and
  • William Laminack

Beilstein J. Nanotechnol. 2013, 4, 20–31, doi:10.3762/bjnano.4.3

Graphical Abstract
  • × 5 mm are opened in this layer by Reactive Ion Etching (RIE). The SiC layer serves two purposes: SiC makes it possible to form the hybrid micro/nanoporous PS structure in the 2 × 5 mm windows during electrochemical anodization because of its resistance to HF. The SiC also aids the placement of gold
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Published 14 Jan 2013

Sub-10 nm colloidal lithography for circuit-integrated spin-photo-electronic devices

  • Adrian Iovan,
  • Marco Fischer,
  • Roberto Lo Conte and
  • Vladislav Korenivski

Beilstein J. Nanotechnol. 2012, 3, 884–892, doi:10.3762/bjnano.3.98

Graphical Abstract
  • be reactive ion etching (RIE) with oxygen, in which the polystyrene particles are first etched predominantly from the sides, where the Al film is much thinner due to the shadowing effect of the e-beam coating of the polystyrene spheres. During this RIE etching step the Al film surface oxidizes and
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Published 19 Dec 2012

Highly ordered ultralong magnetic nanowires wrapped in stacked graphene layers

  • Abdel-Aziz El Mel,
  • Jean-Luc Duvail,
  • Eric Gautron,
  • Wei Xu,
  • Chang-Hwan Choi,
  • Benoit Angleraud,
  • Agnès Granier and
  • Pierre-Yves Tessier

Beilstein J. Nanotechnol. 2012, 3, 846–851, doi:10.3762/bjnano.3.95

Graphical Abstract
  • substrate consisting of periodic nanograting structures (Figure 1, left) prepared by laser interference lithography coupled to deep reactive-ion etching [27]. After the deposition, in order to form stacked graphene layers rolled around the nickel nanowires (Figure 1, right), the carbon-containing nickel (C
  • length. Experimental As described elsewhere [27], the nanograted substrate, which served as a template to prepare the nanowires, was fabricated by laser interference lithography followed by deep reactive ion etching. The size of the substrate was 1 × 1 cm2, and the periodicity of the nanograting patterns
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Published 11 Dec 2012

Controlled positioning of nanoparticles on a micrometer scale

  • Fabian Enderle,
  • Oliver Dubbers,
  • Alfred Plettl and
  • Paul Ziemann

Beilstein J. Nanotechnol. 2012, 3, 773–777, doi:10.3762/bjnano.3.86

Graphical Abstract
  • distances >1 µm on top of Si substrates. By using these NPs as masks for a subsequent reactive ion etching, the square pattern is transferred into Si as a corresponding array of nanopillars. Keywords: electron beam lithography; nanoparticles; positioning; self-assembling; unconventional lithography
  • square lattice with mutual distances in the micrometer range. However, to enhance visibility of these NPs in an overview SEM image, the particles are used as a mask during a subsequent reactive ion etching (RIE) of the Si substrate transforming the NPs into nanopillars. The result is demonstrated in
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Published 20 Nov 2012

Ordered arrays of nanoporous gold nanoparticles

  • Dong Wang,
  • Ran Ji,
  • Arne Albrecht and
  • Peter Schaaf

Beilstein J. Nanotechnol. 2012, 3, 651–657, doi:10.3762/bjnano.3.74

Graphical Abstract
  • schematically presented in Figure 1. The surface of a Si(100) wafer was patterned into a periodic array of pyramidal pits (Figure S1, Supporting Information File 1) by using SCIL, reactive ion etching (RIE), and KOH etching. The spatial period of these pits is 520 nm. A 200 nm layer of SiO2 was thermally grown
  • spatial period. However, the pits were fabricated by KOH etching in this study and have a depth of about 360 nm, whereas the pits in the previous work were fabricated by reactive ion etching and have a depth of 150 nm. This means that a larger optimized thickness is required for the formation of an
  • areas of both the nanoparticles and nanoporous materials. Experimental The surface of a Si(100) wafer was structured into periodic array of pyramidal pits by using SCIL, reactive ion etching (RIE, Oxford Plasmalab 100), and KOH etching. Before application of the resist for SCIL, 200 nm of SiO2 was
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Published 13 Sep 2012

Fabrication of multi-parametric platforms based on nanocone arrays for determination of cellular response

  • Lindarti Purwaningsih,
  • Tobias Schoen,
  • Tobias Wolfram,
  • Claudia Pacholski and
  • Joachim P. Spatz

Beilstein J. Nanotechnol. 2011, 2, 545–551, doi:10.3762/bjnano.2.58

Graphical Abstract
  • nanocones with gold tips. By using a combination of block copolymer nanolithography, electroless deposition, and reactive ion etching several parameters such as structure height and structure distance could easily be adjusted to the desired values. The gold tips allow for easy functionalization of the
  • photolithography, wet etching, or reactive ion etching, as well as simple chemical approaches, have been employed for the fabrication of nanostructured materials neglecting the complexity of the biological aspects. After tremendous work on cellular response to surface features in the micrometer range, such as
  • has been fabricated by a combination of block copolymer micelle lithography (BCML), electroless deposition (ED) and reactive ion etching (RIE). The resulting highly ordered silica nanocone array with gold tips allows for the investigation of several parameters in cell studies at the same time, that is
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Published 06 Sep 2011

Plasmonic nanostructures fabricated using nanosphere-lithography, soft-lithography and plasma etching

  • Manuel R. Gonçalves,
  • Taron Makaryan,
  • Fabian Enderle,
  • Stefan Wiedemann,
  • Alfred Plettl,
  • Othmar Marti and
  • Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 448–458, doi:10.3762/bjnano.2.49

Graphical Abstract
  • hexagonal array of triangular structures, obtained by evaporation of a metal film on top of colloidal crystals, as a mask for reactive ion etching (RIE) of the substrate. In this way, the triangular patterns of the mask are transferred to the substrate through etched triangular pillars. Making an epoxy
  • nm. Nanoimprint lithography [55][56] is another alternative technique in which a pattern is formed on top of a substrate by pressing a mold against a thin resist film, followed by reactive ion etching (RIE) of the patterned substrate. This allows patterning of reproducible structures up to a few tens
  • for reactive ion etching, a film of chromium was evaporated on top of the PS beads. The mask obtained was in the form of a hexagonal array of triangular structures. Measurements of the topography by atomic force microscopy (WITec Alpha 300 AFM in AC mode) typically gave larger thickness values than
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Published 16 Aug 2011

Micro to nano: Surface size scale and superhydrophobicity

  • Christian Dorrer and
  • Jürgen Rühe

Beilstein J. Nanotechnol. 2011, 2, 327–332, doi:10.3762/bjnano.2.38

Graphical Abstract
  • micromachining Using standard lithographic techniques and reactive ion etching, different patterns of shapes were transferred from a photomask into an oxide layer on 4 inch, silicon (100) wafers. The oxide acted as a masking layer in the subsequent anisotropic etching step, where the actual three-dimensional
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Published 27 Jun 2011

Formation of precise 2D Au particle arrays via thermally induced dewetting on pre-patterned substrates

  • Dong Wang,
  • Ran Ji and
  • Peter Schaaf

Beilstein J. Nanotechnol. 2011, 2, 318–326, doi:10.3762/bjnano.2.37

Graphical Abstract
  • square array of pyramidal pits (substrate type A), shown in Figure 1a, and an array of circular holes with square symmetry (substrate type B), shown in Figure 1b, by employing the substrate conformal imprint lithography (SCIL) and reactive ion etching (RIE, Oxford Plasmalab 100 and STS 320 PC). The SCIL
  • The authors are grateful to Manuela Breiter and Joachim Döll from Ilmenau University of Technology for performing reactive ion etching and deposition of the Au films.
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Published 22 Jun 2011

The description of friction of silicon MEMS with surface roughness: virtues and limitations of a stochastic Prandtl–Tomlinson model and the simulation of vibration-induced friction reduction

  • W. Merlijn van Spengen,
  • Viviane Turq and
  • Joost W. M. Frenken

Beilstein J. Nanotechnol. 2010, 1, 163–171, doi:10.3762/bjnano.1.20

Graphical Abstract
  • micronscale. This surface structure is formed by the 2-step RIE (Reactive Ion Etching) process used for etching the structures from an initially continuous polycrystalline silicon film. These surface features are consistently there, from die to die, and from run to run, although they are, of course, also
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Published 22 Dec 2010
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