Controlled graphene oxide assembly on silver nanocube monolayers for SERS detection: dependence on nanocube packing procedure

• Martina Banchelli,
• Bruno Tiribilli,
• Roberto Pini,
• Luigi Dei,
• Paolo Matteini and
• Gabriella Caminati

Beilstein J. Nanotechnol. 2016, 7, 9–21, doi:10.3762/bjnano.7.2

• has received much less attention [30][31][32] due to the lack of direct monitoring of the assembly process in situ. In this work, we followed the formation of an adlayer of AgNCs on silicon oxide surfaces by means of a quartz crystal microbalance with dissipation monitoring as a function of time and

• monolayers of AgNCs transferred on silicon oxide, reported in Figure 1a, shows that as the transfer surface pressure increases, the particle density and the average size of the nanocube clusters increase, until a near-continuous monolayer is established around 15 mN/m. Images of the sample collected at 20 mN

• results support our findings that a larger interparticle distance and higher aggregated fraction occur as transfer surface pressure is increased in the case of procedure A. Procedure B. Controlled assembly of AgNCs by spontaneous adsorption on the surface Spontaneous self-assembly of AgNC on silicon oxide

Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

• Sebastian Gutsch,
• Daniel Hiller,
• Jan Laube,
• Margit Zacharias and
• Christian Kübel

Beilstein J. Nanotechnol. 2015, 6, 964–970, doi:10.3762/bjnano.6.99

• these membranes that also withstand the high temperature annealing that is needed to induce phase separation and crystallization of the Si NC layers. In contrast to the above mentioned ion implantation, deposition processes allow for sharp interfaces between two confining silicon oxide (SiO2) layers

A surface acoustic wave-driven micropump for particle uptake investigation under physiological flow conditions in very small volumes

• Florian G. Strobl,
• Dominik Breyer,
• Phillip Link,
• Adriano A. Torrano,
• Christoph Bräuchle,
• Matthias F. Schneider and
• Achim Wixforth

Beilstein J. Nanotechnol. 2015, 6, 414–419, doi:10.3762/bjnano.6.41

• with an interdigital distance of 15 μm. The structure is fabricated by thermal evaporation of 50 nm gold on a LiNbO3 substrate (128°–Y–cut). For the sake of chemical and electrical isolation, the whole chip was covered with a 200 nm thick silicon oxide layer by thermal evaporation of SiO. The micropump

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

• Jacques Perrin Toinin,
• Alain Portavoce,
• Khalid Hoummada,
• Michaël Texier,
• Maxime Bertoglio,
• Sandrine Bernardini,
• Marco Abbarchi and
• Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

• on the native silicon oxide of a (001) silicon wafer by magnetron sputtering in a commercial set up with a deposition chamber exhibiting a base pressure of ≈10−8 mbar. The first thermal annealing executed after Ge deposition was performed in a commercial Jetfirst 600 Rapid Thermal Annealing furnace

Boosting the local anodic oxidation of silicon through carbon nanofiber atomic force microscopy probes

• Gemma Rius,
• Matteo Lorenzoni,
• Soichiro Matsui,
• Masaki Tanemura and
• Francesc Perez-Murano

Beilstein J. Nanotechnol. 2015, 6, 215–222, doi:10.3762/bjnano.6.20

• logically concerned silicon, as it is the ubiquitous material of modern electronics [6][7]. The application of an electric field between a conductive tip and a silicon substrate under ambient conditions can generate the local anodic oxidation (LAO) of the silicon surface very precisely; intrinsic silicon

• oxide (SiOx) patterns are in the single/double-digit nanometer-range [8]. The principle of LAO-AFM is the following: A water meniscus is formed in humid air when the tip comes to close proximity to the surface due to capillary condensation. The formation of the water meniscus can be triggered in non

Electrical contacts to individual SWCNTs: A review

• Wei Liu,
• Christofer Hierold and
• Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

• orders of magnitude, owing to the chemical change at the metal–SWCNT–silicon oxide interface as well as the structure change of the Ti metal. Further annealing at a higher temperature has also been explored to form TiC by quenching the Ti contacts at 800–850 °C [76]. Thus, the conductance of ambipolar

Hydrophobic interaction governs unspecific adhesion of staphylococci: a single cell force spectroscopy study

• Nicolas Thewes,
• Peter Loskill,
• Philipp Jung,
• Henrik Peisker,
• Markus Bischoff,
• Mathias Herrmann and
• Karin Jacobs

Beilstein J. Nanotechnol. 2014, 5, 1501–1512, doi:10.3762/bjnano.5.163

• cell wall components) and test their dependency on the ‘adhesion history’ the cell has experienced before. Experimental Preparation of the substrates The hydrophilic substrates used in this study are silicon wafers with a native silicon oxide layer (d = 1.7(2) nm) (the number in parentheses denotes the

• probes (30–50 bacteria), we learned that on hydrophilic silicon oxide surfaces, the adhesion force is roughly an order of magnitude lower than on OTS-Si wafers [13]. Hence, the adhesion force of a single bacterium on a hydrophilic surface is expected to be below the experimental resolution (about 50 pN

Electron-beam induced deposition and autocatalytic decomposition of Co(CO)₃NO

• Florian Vollnhals,
• Martin Drost,
• Fan Tu,
• Esther Carrasco,
• Andreas Späth,
• Rainer H. Fink,
• Hans-Peter Steinrück and
• Hubertus Marbach

Beilstein J. Nanotechnol. 2014, 5, 1175–1185, doi:10.3762/bjnano.5.129

• precursor for the fabrication of nanostructures by using EBISA on silicon oxide surfaces. An alternative approach could be to use different substrates for EBISA: It was shown recently by our group that it is possible to activate thin layers of large organic molecules (2H-tetraphenyl porphyrin) on metal

Nanocavity crossbar arrays for parallel electrochemical sensing on a chip

• Enno Kätelhön,
• Dirk Mayer,
• Marko Banzet,
• Andreas Offenhäusser and
• Bernhard Wolfrum

Beilstein J. Nanotechnol. 2014, 5, 1137–1143, doi:10.3762/bjnano.5.124

• of a sacrificial layer followed by an isotropic etch. The full device is stabilized by a silicon oxide/silicon nitride stack that covers the full device and is solely opened trough access holes above each crossbar intersection. Since the whole device is covered by the passivating layer, electrodes

The study of surface wetting, nanobubbles and boundary slip with an applied voltage: A review

• Yunlu Pan,
• Bharat Bhushan and
• Xuezeng Zhao

Beilstein J. Nanotechnol. 2014, 5, 1042–1065, doi:10.3762/bjnano.5.117

• surface was prepared as coating on a p-type boron doped silicon wafer (1–20 Ω·cm, Silicon Quest International) substrate, which was coated with a 300 nm thick silicon oxide layer. Before coating the PS film on the substrate, the wafers was cleaned in a sonication bath of acetone first, and then cleaned in

• dielectric layer in this work has two layers, one is the 300 nm thick silicon oxide layer, and the other is the PS film. Then the equivalent capacitance of the system can be expressed as [76]: where C1, C2 are the capacitances of silicon oxide layer and PS film, ε1, ε2 are the relative dielectric constants

• of the silicon oxide and PS, d1, d2 are the thickness of silicon oxide layer and PS film, respectively, and ε0 is the dielectric constant of the vacuum. Combining Equation 1 and Equation 2, one gets Here we define an electrowetting coefficient k for this work, Then the equation can be expressed as

En route to controlled catalytic CVD synthesis of densely packed and vertically aligned nitrogen-doped carbon nanotube arrays

• Slawomir Boncel,
• Sebastian W. Pattinson,
• Valérie Geiser,
• Milo S. P. Shaffer and
• Krzysztof K. K. Koziol

Beilstein J. Nanotechnol. 2014, 5, 219–233, doi:10.3762/bjnano.5.24

• growth of nanotubes and mainly carbon diffusion through the metal particle. The particle at the base (growth substrate) of the nanotube is likely to be iron silicon carbide and iron silicon oxide since it was in the contact with the silica quartz substrate. In the nitrogen-assisted growth of nanotubes

Cyclic photochemical re-growth of gold nanoparticles: Overcoming the mask-erosion limit during reactive ion etching on the nanoscale

• Burcin Özdemir,
• Axel Seidenstücker,
• Alfred Plettl and
• Paul Ziemann

Beilstein J. Nanotechnol. 2013, 4, 886–894, doi:10.3762/bjnano.4.100

• compensating for the erosion due to the previous cycle. As a result of this mask repair method, arrays of silica nanopillar with heights up to 680 nm and aspect ratios of 10:1 are fabricated. Based on the given recipes, the approach can be applied to a variety of materials like silicon, silicon oxide, and

Preparation of electrochemically active silicon nanotubes in highly ordered arrays

• Tobias Grünzel,
• Young Joo Lee,
• Karsten Kuepper and
• Julien Bachmann

Beilstein J. Nanotechnol. 2013, 4, 655–664, doi:10.3762/bjnano.4.73

• thermal reduction of silicon dioxide to silicon by lithium vapor. The lithium oxide byproduct is removed subsequently. The reduction, performed under argon at 670 °C, is quantitative, homogeneous and well-behaved, in that the product contains neither remnants of silicon oxide nor any lithium silicide, as

Mapping of plasmonic resonances in nanotriangles

• Simon Dickreuter,
• Julia Gleixner,
• Andreas Kolloch,
• Johannes Boneberg,
• Elke Scheer and
• Paul Leiderer

Beilstein J. Nanotechnol. 2013, 4, 588–602, doi:10.3762/bjnano.4.66

• been removed by the laser pulse (see, e.g., Figure 5, which will be discussed in detail below). The electron-beam lithography samples were prepared on a silicon (Si) wafer with a native silicon oxide (SiO2) layer with a thickness of 2.4 nm (measured by ellipsometry), for the wafers used for colloid

• preparation and ablation have been removed with aqua regia. Here, the volume of the material deposited in the rim appears to be distinctly larger than the volume of the crater hole. This is due to a change in composition (the rim consists mostly of silicon oxide), and partly also due to the fact that the AFM

Polynomial force approximations and multifrequency atomic force microscopy

• Daniel Platz,
• Daniel Forchheimer,
• Erik A. Tholén and
• David B. Haviland

Beilstein J. Nanotechnol. 2013, 4, 352–360, doi:10.3762/bjnano.4.41

• for experimental data. Polynomial force reconstruction during slow surface approach To demonstrate the capabilities of the polynomial force reconstruction we perform an ImAFM approach measurement on a silicon oxide surface. In this measurement two drive frequencies close to resonance result in a beat

• matrix in Equation 16 are not required. To validate the equivalence of polynomial force reconstruction on spectral and force quadrature data, we consider the ImAFM approach measurement on silicon oxide described above. From the tip motion at a z-piezo extension of 25.6 nm we compute the FI(A) curve and

• polynomial force reconstruction will be a useful method for many scientists and that new data-representation schemes will inspire innovative analysis methods. Experimental The silicon oxide sample was cleaned in an oxygen plasma before measurements were perfomed in a Bruker Dimension 3100 AFM system. The

Selective surface modification of lithographic silicon oxide nanostructures by organofunctional silanes

• Thomas Baumgärtel,
• Christian von Borczyskowski and
• Harald Graaf

Beilstein J. Nanotechnol. 2013, 4, 218–226, doi:10.3762/bjnano.4.22

• functionalization of silicon oxide nanostructures prepared by AFM-anodization lithography of alkyl-terminated silicon. Different conditions for the growth of covalently bound mono-, multi- or submonolayers of distinctively functional silane molecules on nanostructures have been identified by AFM-height

• investigations. Routes for the preparation of methyl- or amino-terminated structures or silicon surfaces are presented and discussed. The formation of silane monolayers on nanoscopic silicon oxide nanostructures was found to be much more sensitive towards ambient humidity than, e.g., the silanization of larger

• coverage of the dye molecules on length scale that is not accessible by standard AFM measurements. Keywords: AFM lithography; amino-functionalization; local anodic oxidation; octadecyl-trichlorosilane; silicon oxide nanostructures; Introduction Local anodic oxidation (LAO) nanolithography is a reliable

High-resolution dynamic atomic force microscopy in liquids with different feedback architectures

• John Melcher,
• David Martínez-Martín,
• Miriam Jaafar,
• Julio Gómez-Herrero and
• Arvind Raman

Beilstein J. Nanotechnol. 2013, 4, 153–163, doi:10.3762/bjnano.4.15

• –sample virial vts(z,asp) and dissipation ets(z,asp). Data acquired in vacuum on a silicon sample with 1 nm native silicon oxide (a) in vacuum and (b) in air. (c) Data acquired in deionized water on a glass substrate. The set-point amplitudes were 8.5 nm, 8.6 nm, and 1.5 nm, respectively. See the Methods

• , which is the typical precursory experiment to imaging with FM. The experimental data consist of F and σ versus z. Reconstruction of ets and vts versus z is achieved by substituting a* = a0 = asp and = π/2 into Equation 6 to yield Measurements were made on a silicon substrate with 1 nm native silicon

• oxide in vacuum with k = 27 N/m, Q0 = 28,000 and asp = 8.5 nm and in ambient air with k = 36 N/m, Q0 = 620 and asp = 8.6 nm. Data were acquired on glass in deionized water with k = 0.6 N/m, Q0 = 1.6 and asp = 1.5 nm. The high-resolution images of freshly cleaved mica in deionized water in Figure 4 were

Functionalization of vertically aligned carbon nanotubes

• Eloise Van Hooijdonk,
• Carla Bittencourt,
• Rony Snyders and
• Jean-François Colomer

Beilstein J. Nanotechnol. 2013, 4, 129–152, doi:10.3762/bjnano.4.14

• nanotube patterns [67]. Photolithography followed by dry and/or wet etching can be used to pattern silicon oxide in different shapes and thickness allowing the design of a wide range of organized nanotube structures. An example is the beautiful patterns of multiply oriented, organized, flower-like

Interpreting motion and force for narrow-band intermodulation atomic force microscopy

• Daniel Platz,
• Daniel Forchheimer,
• Erik A. Tholén and
• David B. Haviland

Beilstein J. Nanotechnol. 2013, 4, 45–56, doi:10.3762/bjnano.4.5

• methods in the future that will take advantage of the high signal-to-noise ratio and the high acquisition speed of ImAFM. Experimental The PS sample was spin cast from toluene solution on a silicon oxide substrate. Both PS (Mw = 280 kDa) and toluene were obtained from Sigma-Aldrich and used as purchased

Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

• Farhad Larki,
• Arash Dehzangi,
• Alam Abedini,
• Ahmad Makarimi Abdullah,
• Elias Saion,
• Sabar D. Hutagalung,
• Mohd N. Hamidon and
• Jumiah Hassan

Beilstein J. Nanotechnol. 2012, 3, 817–823, doi:10.3762/bjnano.3.91

• controllable [17]. This step of device fabrication is very significant and high accuracy and precision is required in order to obtain a smooth and uniform surface. The final step of the device fabrication is the etching of the silicon oxide, which allows the removal of the oxide mask. The silicon oxide etch

Polymer blend lithography: A versatile method to fabricate nanopatterned self-assembled monolayers

• Cheng Huang,
• Markus Moosmann,
• Jiehong Jin,
• Tobias Heiler,
• Stefan Walheim and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2012, 3, 620–628, doi:10.3762/bjnano.3.71

• found that this system decays into a purely lateral phase morphology during spin-casting of the solution at a moderate humidity, which means that both phases extend from the free-air interface down to the silicon oxide substrate. This is by far not the common case. In most cases of polymer-blend

• focus of a forthcoming publication. With the structure generated by using the given recipe it is possible to remove one component (e.g., PMMA) and to deposit a SAM on the completely freed silicon oxide substrate areas with very high reproducibility. After the silane molecules have bonded covalently, the

• -phase SAM template consisting of APTES, FDTS and silicon oxide pattern elements is fabricated with a topographic contrast of approximately 1.3 nm. The roughness of 0.2 nm remaining in the SiOx regions is in the same range as the one of the original Si wafer. The height of the APTES-SAM was found to be

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• , nucleates the growth of a Si-NW. In previous work [17] we investigated the crucial importance of substrate preparation in the case of Au-catalysed NWs grown by the VLS mechanism. Removal of silicon oxide shortly before catalyst deposition proved to be decisive for achieving epitaxy and crystallinity. The

Spontaneous dissociation of Co₂(CO)₈ and autocatalytic growth of Co on SiO₂: A combined experimental and theoretical investigation

• Kaliappan Muthukumar,
• Harald O. Jeschke,
• Roser Valentí,
• Evgeniya Begun,
• Johannes Schwenk,
• Fabrizio Porrati and
• Michael Huth

Beilstein J. Nanotechnol. 2012, 3, 546–555, doi:10.3762/bjnano.3.63

• optical microsocope image of the deposit profile shown in (a). SEM images of Co deposited on the plasma-pretreated silicon oxide and gold. The picture on the top left is an overview of a SiO2 surface prepatterned with Cr/Au contact structures. The labeling A–E indicates regions of different precursor flux

Structural, electronic and photovoltaic characterization of multiwalled carbon nanotubes grown directly on stainless steel

• Luca Camilli,
• Manuela Scarselli,
• Silvano Del Gobbo,
• Paola Castrucci,
• Eric Gautron and
• Maurizio De Crescenzi

Beilstein J. Nanotechnol. 2012, 3, 360–367, doi:10.3762/bjnano.3.42

• consider the position of the electrodes through which the current is collected. In the in-plane geometry, the electrodes are in contact only with the CNT film (and the thick silicon oxide underneath), thus collecting carriers coming mainly from the nanostructures, since the majority of the carriers from

Parallel- and serial-contact electrochemical metallization of monolayer nanopatterns: A versatile synthetic tool en route to bottom-up assembly of electric nanocircuits

• Jonathan Berson,
• Assaf Zeira,
• Rivka Maoz and
• Jacob Sagiv

Beilstein J. Nanotechnol. 2012, 3, 134–143, doi:10.3762/bjnano.3.14

• nanocircuits [56]. This is possible, as the present electrochemical methodology is compatible with low-conductivity substrates [30] and the deposited metal features reside on an extremely robust insulating layer of variable thickness (here the organic silane monolayer plus the native silicon oxide underneath