Gas-sensing behaviour of ZnO/diamond nanostructures

• Marina Davydova,
• Alexandr Laposa,
• Jiri Smarhak,
• Alexander Kromka,
• Neda Neykova,
• Josef Nahlik,
• Jiri Kroutil,
• Jan Drahokoupil and
• Jan Voves

Beilstein J. Nanotechnol. 2018, 9, 22–29, doi:10.3762/bjnano.9.4

• . All designs were fabricated in-house by standard UV lithography, followed by thermal evaporation and lift-off. The diamond growth was carried out by microwave-plasma-enhanced chemical vapour deposition from a gas mixture containing 1% of CH4 in H2 at temperatures as low as 450 °C. Then, the samples

Advances and challenges in the field of plasma polymer nanoparticles

• Andrei Choukourov,
• Pavel Pleskunov,
• Daniil Nikitin,
• Valerii Titov,
• Artem Shelemin,
• Mykhailo Vaidulych,
• Anna Kuzminova,
• Pavel Solař,
• Jan Hanuš,
• Jaroslav Kousal,
• Ondřej Kylián,
• Danka Slavínská and
• Hynek Biederman

Beilstein J. Nanotechnol. 2017, 8, 2002–2014, doi:10.3762/bjnano.8.200

• the production of metal NPs by vacuum thermal evaporation with subsequent condensation of atomic metal vapours on a cool buffer gas and later thermal evaporation was replaced by magnetron sputtering [41]. At least one work investigated the formation of polymeric NPs by thermal evaporation of poly(N

Parylene C as a versatile dielectric material for organic field-effect transistors

• Tomasz Marszalek,
• Maciej Gazicki-Lipman and
• Jacek Ulanski

Beilstein J. Nanotechnol. 2017, 8, 1532–1545, doi:10.3762/bjnano.8.155

• ) semiconducting films, obtained by thermal evaporation [47] or from solution [48] is insensitive to the substrate roughness. However, in thin monolayer semiconductor films the surface roughness significantly influences the charge-carrier transport [49]. This is due to the fact that charge-carrier transport in the

Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions

• Sreetama Banerjee,
• Daniel Bülz,
• Danny Reuter,
• Karla Hiller,
• Dietrich R. T. Zahn and
• Georgeta Salvan

Beilstein J. Nanotechnol. 2017, 8, 1502–1507, doi:10.3762/bjnano.8.150

• pentacene and its derivative 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) molecules [5][9] deposited by thermal evaporation in vacuum. The influence of gate voltage on the magnetoresistance was also thoroughly investigated in these two reports. In fact, most of the studies on OMAR in small

• found to be twice as much as OFET, similar to the photocurrent. It should be mentioned here that the TIPS-pentacene OFETs fabricated by thermal evaporation in [9] showed a fast switching response, similar to our HED-TIEs. This is most probably due to the significantly smaller volume of the OFET channel

Adsorption and electronic properties of pentacene on thin dielectric decoupling layers

• Sebastian Koslowski,
• Daniel Rosenblatt,
• Alexander Kabakchiev,
• Klaus Kuhnke,
• Klaus Kern and
• Uta Schlickum

Beilstein J. Nanotechnol. 2017, 8, 1388–1395, doi:10.3762/bjnano.8.140

• were generated by thermal evaporation of KCl at 653 K for 20 min. During this process, the substrates were kept at room temperature. The metal substrates (Au(111), Cu(111), Cu(110)) were cleaned by alternating sequences of Ar-ion bombardment and annealing at 843 K. The annealing temperature was reduced

Deposition of exchange-coupled dinickel complexes on gold substrates utilizing ambidentate mercapto-carboxylato ligands

• Martin Börner,
• Laura Blömer,
• Marcus Kischel,
• Peter Richter,
• Georgeta Salvan,
• Dietrich R. T. Zahn,
• Pablo F. Siles,
• Maria E. N. Fuentes,
• Carlos C. B. Bufon,
• Daniel Grimm,
• Oliver G. Schmidt,
• Daniel Breite,
• Bernd Abel and
• Berthold Kersting

Beilstein J. Nanotechnol. 2017, 8, 1375–1387, doi:10.3762/bjnano.8.139

• to deposit these materials as rows [15], thin films [16][17][18][19], or multilayers [20][21][22][23][24][25][26]. However, the limited thermal and kinetic stability of most SMMs prevents their thermal evaporation [27] and has initiated the search for milder, solution-based methods for surface

Charge transport in organic nanocrystal diodes based on rolled-up robust nanomembrane contacts

• Vineeth Kumar Bandari,
• Lakshmi Varadharajan,
• Longqian Xu,
• Abdur Rehman Jalil,
• Mirunalini Devarajulu,
• Pablo F. Siles,
• Feng Zhu and
• Oliver G. Schmidt

Beilstein J. Nanotechnol. 2017, 8, 1277–1282, doi:10.3762/bjnano.8.129

• usually realized by thermal evaporation in vacuum. The molecules have van der Waals interaction with an inert substrate which makes them weakly bonded to the substrate [11]. As a result, by controlling the molecules deposition parameters, such as deposition rate and the substrate temperature, it is

Growth, structure and stability of sputter-deposited MoS₂ thin films

• Reinhard Kaindl,
• Bernhard C. Bayer,
• Roland Resel,
• Thomas Müller,
• Viera Skakalova,
• Gerlinde Habler,
• Rainer Abart,
• Alexey S. Cherevan,
• Dominik Eder,
• Maxime Blatter,
• Fabian Fischer,
• Jannik C. Meyer,
• Dmitry K. Polyushkin and
• Wolfgang Waldhauser

Beilstein J. Nanotechnol. 2017, 8, 1115–1126, doi:10.3762/bjnano.8.113

• (FET) devices with rectangular and circular contacts have been made. The drain/source contacts were defined by means of optical lithography. The Ti/Au (5/50 nm) contact pads have been fabricated by means of thermal evaporation. As the global back gate to the FET devices the highly doped Si wafer under

Ultrasmall magnetic field-effect and sign reversal in transistors based on donor/acceptor systems

• Thomas Reichert and
• Tobat P. I. Saragi

Beilstein J. Nanotechnol. 2017, 8, 1104–1114, doi:10.3762/bjnano.8.112

• , Spiro-TTB and HAT-CN were deposited by thermal evaporation at a base pressure of 1 × 10−7 Torr (Tsubstrate = 298 K) with a thickness of 40 nm. For mixed system, the composition was controlled by using different evaporation rates for Spiro-TTB and HAT-CN, respectively. The mixing ratios (mass ratios

Stable Au–C bonds to the substrate for fullerene-based nanostructures

• Taras Chutora,
• Jesús Redondo,
• Bruno de la Torre,
• Martin Švec,
• Pavel Jelínek and
• Héctor Vázquez

Beilstein J. Nanotechnol. 2017, 8, 1073–1079, doi:10.3762/bjnano.8.109

• annealing (600 °C, 5 min) were required to obtain samples with overall cleanliness suitable for achieving the atomic resolution by means of STM. For deposition, we employed a custom-made thermal evaporation source, which contained a pocket made of tantalum, suitable for the evaporation of molecules such as

Nanoantenna-assisted plasmonic enhancement of IR absorption of vibrational modes of organic molecules

• Alexander G. Milekhin,
• Olga Cherkasova,
• Sergei A. Kuznetsov,
• Ilya A. Milekhin,
• Ekatherina E. Rodyakina,
• Alexander V. Latyshev,
• Sreetama Banerjee,
• Georgeta Salvan and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2017, 8, 975–981, doi:10.3762/bjnano.8.99

• . The thermal evaporation of the organic molecule was performed in a vacuum chamber at a pressure of ≈5 × 10−8 mbar. The evaporation temperature was approximately 400 °C and the deposition rate was ≈0.5 nm/min. During the organic film growth, the substrate was kept at room temperature. Cortisol (11β

Triptycene-terminated thiolate and selenolate monolayers on Au(111)

• Jinxuan Liu,
• Martin Kind,
• Björn Schüpbach,
• Daniel Käfer,
• Stefanie Winkler,
• Wenhua Zhang,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2017, 8, 892–905, doi:10.3762/bjnano.8.91

• other contaminations from the ambient. Subsequently, a 140 nm gold layer (99.995%, Chempur) was deposited by thermal evaporation at a substrate temperature of 280 °C and a pressure of ≈10−7 mbar using the above-mentioned vaporisator. The substrate was cooled down to room temperature in the evaporation

Synthesis of graphene–transition metal oxide hybrid nanoparticles and their application in various fields

• Arpita Jana,
• Elke Scheer and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2017, 8, 688–714, doi:10.3762/bjnano.8.74

Gas sensing properties of MWCNT layers electrochemically decorated with Au and Pd nanoparticles

• Elena Dilonardo,
• Michele Penza,
• Marco Alvisi,
• Riccardo Rossi,
• Gennaro Cassano,
• Cinzia Di Franco,
• Francesco Palmisano,
• Luisa Torsi and
• Nicola Cioffi

Beilstein J. Nanotechnol. 2017, 8, 592–603, doi:10.3762/bjnano.8.64

• [25][26][27], thermal evaporation [27][28], and sputtering [29][30][31]. Frequently, these deposition techniques result in an uncontrolled clustering at high metal loading, thus negatively affecting the catalytic properties and integrity of the carbon structure. As a possible solution to overcome

Impact of air exposure and annealing on the chemical and electronic properties of the surface of SnO₂ nanolayers deposited by rheotaxial growth and vacuum oxidation

• Monika Kwoka and
• Maciej Krzywiecki

Beilstein J. Nanotechnol. 2017, 8, 514–521, doi:10.3762/bjnano.8.55

• controlled) were deposited under UHV conditions (system base pressure: 3·10−9 mbar) by thermal evaporation of Sn pellets (KJLC®) from a resistively heated source on Si(100) substrates (Bosch GmbH, n-type, P-doped, 5–10 Ω·cm) maintained at a temperature of 265 °C at an oxygen partial pressure of 10−4 mbar for

Fabrication of black-gold coatings by glancing angle deposition with sputtering

• Alan Vitrey,
• Rafael Alvarez,
• Alberto Palmero,
• María Ujué González and
• José Miguel García-Martín

Beilstein J. Nanotechnol. 2017, 8, 434–439, doi:10.3762/bjnano.8.46

• the nanostructures fabricated with evaporation methods (such as thermal evaporation or electron-beam evaporation) exhibit very well defined shapes and impressive homogeneity due to their almost punctual material sources, they cannot be scaled-up to mass production. Consequently, from an industrial

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• (110 nm) to graphene were formed on the top side of the structure by a conventional thermal evaporation technique. Electrodes were patterned into 1 × 1 mm square shapes by the use of a shadow mask. For comparison to the diodes with Pd contacts, we have fabricated several diodes using a layer of

Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

• Christoph Schreyvogel,
• Vladimir Polyakov,
• Sina Burk,
• Helmut Fedder,
• Andrej Denisenko,
• Felipe Fávaro de Oliveira,
• Ralf Wunderlich,
• Jan Meijer,
• Verena Zuerbig,
• Jörg Wrachtrup and
• Christoph E. Nebel

Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165

• the diamond surface using photolithography with subsequent thermal evaporation of the metals. Al is a Schottky contact showing a barrier height of 570 meV and Au is an Ohmic contact [18]. The contacts exhibit dimensions of 1 mm × 300 µm and were separated from each other by 400 µm. In order to have a

Sb₂S₃ grown by ultrasonic spray pyrolysis and its application in a hybrid solar cell

• Erki Kärber,
• Atanas Katerski,
• Ilona Oja Acik,
• Arvo Mere,
• Valdek Mikli and
• Malle Krunks

Beilstein J. Nanotechnol. 2016, 7, 1662–1673, doi:10.3762/bjnano.7.158

• P3HT layer remained below 400 nm, as estimated from SEM images. The Au layer was deposited onto the P3HT by thermal evaporation of metallic Au for 10 min under a pressure of 2·10−6 Torr through a metal mask with a number of holes that had an area of 1.7 mm2 each. Alternatively, larger contacts of 1 cm2

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

• Ionel Stavarache,
• Valentin Adrian Maraloiu,
• Petronela Prepelita and
• Gheorghe Iordache

Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142

• masking technique were deposited by magnetron sputtering (Varian ER3119) and e-beam assisted thermal evaporation (Bestec), respectively. Ge:SiO2 films were characterized using an X-ray diffractometer (BRUKER-AXS with Cu Kα1 radiation of λ = 0.15406 nm) and an advanced analytical atomic resolution electron

Microwave solvothermal synthesis and characterization of manganese-doped ZnO nanoparticles

• Jacek Wojnarowicz,
• Roman Mukhovskyi,
• Elzbieta Pietrzykowska,
• Sylwia Kusnieruk,
• Jan Mizeracki and
• Witold Lojkowski

Beilstein J. Nanotechnol. 2016, 7, 721–732, doi:10.3762/bjnano.7.64

• ], combustion [52], sol–gel [7][31][33][53][54], spin coating [19][20], pulsed laser deposition [26], reactions in the solid state [35][55], thermal evaporation [56], and thermal evaporation vapour-phase deposition [30]. However, two of the most promising methods, which are still being developed are

Orientation of FePt nanoparticles on top of a-SiO₂/Si(001), MgO(001) and sapphire(0001): effect of thermal treatments and influence of substrate and particle size

• Martin Schilling,
• Paul Ziemann,
• Zaoli Zhang,
• Johannes Biskupek,
• Ute Kaiser and
• Ulf Wiedwald

Beilstein J. Nanotechnol. 2016, 7, 591–604, doi:10.3762/bjnano.7.52

• as the absence of any particle coalescence during the annealing up to temperatures of 650 °C. The height distribution of the nanoparticles (right panel of Figure 10) yields an average value of 2.7 ± 0.7 nm identical to the as-prepared value. Thus, thermal evaporation of the FePt NPs during annealing

Antibacterial activity of silver nanoparticles obtained by pulsed laser ablation in pure water and in chloride solution

• Brunella Perito,
• Emilia Giorgetti,
• Paolo Marsili and
• Maurizio Muniz-Miranda

Beilstein J. Nanotechnol. 2016, 7, 465–473, doi:10.3762/bjnano.7.40

• attributed to a difference in silver oxide content on the AgNPs. It is known that thermal evaporation dominates in the process of ns ablation [33], while a nonthermal mechanism (attributable to photoionization [34]) is predominant in the ps ablation process. Because Ag2O dissociates above 550 K, it is

Charge injection and transport properties of an organic light-emitting diode

• Peter Juhasz,
• Juraj Nevrela,
• Michal Micjan,
• Miroslav Novota,
• Jan Uhrik,
• Lubica Stuchlikova,
• Jan Jakabovic,
• Ladislav Harmatha and
• Martin Weis

Beilstein J. Nanotechnol. 2016, 7, 47–52, doi:10.3762/bjnano.7.5

• and deionized water and then treated by oxygen plasma to remove organic residues. Prior to the organic material deposition the substrates were heated up to 200 °C during 30 min in vacuum better than 10−5 Pa. Devices were formed by sequential thermal evaporation of hole transport material α-NPD (Sigma

Chemiresistive/SERS dual sensor based on densely packed gold nanoparticles

• Sanda Boca,
• Cosmin Leordean,
• Simion Astilean and
• Cosmin Farcau

Beilstein J. Nanotechnol. 2015, 6, 2498–2503, doi:10.3762/bjnano.6.259

• 1182 and 1487 cm−1, can also be observed, which were present in the spectrum measured before MBA exposure, due to folic acid molecules. Note that a flat gold film deposited by thermal evaporation did not exhibit any visible Raman bands, under the same experimental conditions (exposure to methanol, MBA