Photoelectrochemical and Raman characterization of In₂O₃ mesoporous films sensitized by CdS nanoparticles

• Mikalai V. Malashchonak,
• Sergey K. Poznyak,
• Eugene A. Streltsov,
• Anatoly I. Kulak,
• Olga V. Korolik and
• Alexander V. Mazanik

Beilstein J. Nanotechnol. 2013, 4, 255–261, doi:10.3762/bjnano.4.27

• , Ag2S, Bi2S3 and others) immobilized onto the surface of mesoporous films of wide-bandgap oxides (TiO2, ZnO, SnO2, Nb2O5, Ta2O5, WO3, In2O3) are used as the sensitizing components [2][3][4][5]. It is considered that the best technique for the in situ deposition of such nanoparticles is the successive

Nanostructure-directed chemical sensing: The IHSAB principle and the dynamics of acid/base-interface interaction

• James L. Gole and
• William Laminack

Beilstein J. Nanotechnol. 2013, 4, 20–31, doi:10.3762/bjnano.4.3

• gas and metal oxides. The dynamic interaction of NO with TiO2, SnO2, NiO, CuxO, and AuxO (x >> 1), in order of decreasing acidity, demonstrates this effect. Interactions with the metal-oxide-decorated interface can be modified by the in situ nitridation of the oxide nanoparticles, enhancing the

• broader-based and predicts reversible sensor–analyte interactions. The fractional deposition of TiO2, SnO2, NiO, CuxO, and AuxO (x >> 1) nanostructured islands (Figure 1) modifies the sensitivity response of the extrinsic porous silicon interface. The deposited nanostructures, in effect, dominate the PS

• decorated surface is five times more responsive than the untreated PS interface [24]. For p+-type PS, TiO2, SnO2, CuxO, and AuxO decorated surfaces are respectively ≥ 4, 2.5, 3–3.5, and 7 times more responsive. The analyte response data forms the basis for the development of the materials positioning

Self-assembled monolayers and titanium dioxide: From surface patterning to potential applications

• Yaron Paz

Beilstein J. Nanotechnol. 2011, 2, 845–861, doi:10.3762/bjnano.2.94

• should be pointed out that the SSD technique is not limited to the deposition of titanium dioxide and was utilized for patterned growth of other oxides such as In2O3 [70], Ta2O5, SnO2 and SrTiO3 [69]. The most popular means for selective growth is direct site-selective deposition (Figure 4), based on

Extended X-ray absorption fine structure of bimetallic nanoparticles

• Carolin Antoniak

Beilstein J. Nanotechnol. 2011, 2, 237–251, doi:10.3762/bjnano.2.28

• several examples can be found for EXAFS analysis on nanoparticle systems, e.g., Co [8], CdS [9], CdSe [10], SnO2 [11] and Au [12] nanoparticles, as well as Ag nanoparticles embedded in glass [13][14]. To discuss the advantages and possible drawbacks of EXAFS analysis in nanoparticulate systems, this paper

Schottky junction/ohmic contact behavior of a nanoporous TiO₂ thin film photoanode in contact with redox electrolyte solutions

• Masao Kaneko,
• Hirohito Ueno and
• Junichi Nemoto

Beilstein J. Nanotechnol. 2011, 2, 127–134, doi:10.3762/bjnano.2.15

• are transported first to the fluorine-doped tin oxide (FTO, SnO2:F) conductive layer through TiO2 grain boundaries and then to the cathode reducing electron acceptor there (O2 in the present case). In a Schottky junction, under the conditions when the band structure is flat without any bending, the

• To prepare a nanoporous TiO2 film, Ti-nanoxide paste (T/SP, average particle size 13 nm, anatase >90%) was purchased from Solaronix SA, Aubonne, Switzerland. Larger size TiO2 powders, G2 (500 nm, rutile >95%) was purchased from Showa Denko Co., Ltd, Japan. F-doped SnO2 conductive glass (FTO, surface

Room temperature synthesis of indium tin oxide nanotubes with high precision wall thickness by electroless deposition

• Mario Boehme,
• Emanuel Ionescu,
• Ganhua Fu and
• Wolfgang Ensinger

Beilstein J. Nanotechnol. 2011, 2, 119–126, doi:10.3762/bjnano.2.14

• surfaces of substrates or homogeneous nucleation in solution, is determined by the supersaturated solution [16]. When the solution is supersaturated, nucleation begins; ITO nanocrystallites form on the template surface (Equation 12), according to the concentration ratio of In2O3 and SnO2, due to the