Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst

• Britta Kämpken,
• Verena Wulf,
• Norbert Auner,
• Marcel Winhold,
• Michael Huth,
• Daniel Rhinow and
• Andreas Terfort

Beilstein J. Nanotechnol. 2012, 3, 535–545, doi:10.3762/bjnano.3.62

• nanosized wires (NW) of silicon including thermal evaporation [9], molecular beam epitaxy [10], laser ablation [11], chemical vapor deposition (CVD) [12] and CVD in combination with the vapor–liquid–solid (VLS) method [13]. In the VLS mechanism, small solid metal particles catalyze the decomposition of the

Effect of deposition temperature on the structural and optical properties of chemically prepared nanocrystalline lead selenide thin films

• Anayara Begum,
• Amir Hussain and
• Atowar Rahman

Beilstein J. Nanotechnol. 2012, 3, 438–443, doi:10.3762/bjnano.3.50

• ], microwave heating [9], pulsed laser deposition [10], electrochemical atomic layer epitaxy [11], and electrodeposition [12], the chemical bath deposition method [13][14] is relatively simple and cost-effective, and has the advantage that it allows control over deposition parameters such as the pH, the

Dipole-driven self-organization of zwitterionic molecules on alkali halide surfaces

• Laurent Nony,
• Franck Bocquet,
• Franck Para,
• Frédéric Chérioux,
• Eric Duverger,
• Frank Palmino,
• Vincent Luzet and
• Christian Loppacher

Beilstein J. Nanotechnol. 2012, 3, 285–293, doi:10.3762/bjnano.3.32

• with a point-on-point epitaxy [15][16] or other well-defined epitaxies [17] were found and single molecular layers were observed. Furthermore, structured monolayer growth was obtained on a nanostructured surface [18]. In our work we study the influence of the molecular dipole on the adsorption of

• substrate surface. We therefore conclude that the observed overlayer is a coincidence II epitaxy, when we follow the classification scheme by Hooks et al. [2]. The characteristics of such a type of epitaxy are that only some of the overlayer lattice points lie on primitive substrate lattice lines and that a

Molecular-resolution imaging of pentacene on KCl(001)

• Julia L. Neff,
• Jan Götzen,
• Enhui Li,
• Michael Marz and
• Regina Hoffmann-Vogel

Beilstein J. Nanotechnol. 2012, 3, 186–191, doi:10.3762/bjnano.3.20

• ). At least for pattern I an alignment along the substrate directions is observed, hinting at epitaxial growth. This is in agreement with the point-on-line epitaxy suggested for thicker pentacene films in the thin-film and bulk phases [32][33]. Additionally, two kinds of defects were observed. For

• estimate the amount of displacement in this direction. The image does not contradict the possibility that the pattern is displaced by a lattice vector of the substrate unit cell, which is much smaller than the molecular unit cell. In that case the line defect could release strain induced by the epitaxy of

Nanoscaled alloy formation from self-assembled elemental Co nanoparticles on top of Pt films

• Luyang Han,
• Ulf Wiedwald,
• Johannes Biskupek,
• Kai Fauth,
• Ute Kaiser and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 473–485, doi:10.3762/bjnano.2.51

• formation of a CoPt phase with strongly increased magnetic anisotropy compared to pure Co. At higher temperatures, however, the Co atoms diffuse into a nearby surface region where Pt-rich compounds are formed, as shown by element-specific microscopy. Keywords: alloy; Co; CoPt; epitaxy; HRTEM; magnetometry

• ) peak of the Pt film on STO(100). The small rocking width of FWHM = 0.29° indicates a high degree of orientation of the film. To test possible epitaxy of this film a pole figure was measured at the Pt(111) peak position (2θ = 39.8°) by scanning both the in-plane angle Φ and the tilting angle ψ. Figure

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

• Thomas H. Loeber,
• Dirk Hoffmann and
• Henning Fouckhardt

Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39

• substrates with an R450 molecular beam epitaxy (MBE) system from DCA Oy, Finland. The flux was determined by beam equivalent pressures (BEP) for all source materials. The partial Ga pressure was kept nearly constant between ≈1.60 and ≈1.89 × 10−7 hPa, for each individual growth process. Depending on the

Structure, morphology, and magnetic properties of Fe nanoparticles deposited onto single-crystalline surfaces

• Armin Kleibert,
• Wolfgang Rosellen,
• Mathias Getzlaff and
• Joachim Bansmann

Beilstein J. Nanotechnol. 2011, 2, 47–56, doi:10.3762/bjnano.2.6

• process might be accompanied by a complex reshaping of the particles. Keywords: epitaxy; iron; magnetic nanoparticles; Ni(111); RHEED; spontaneous self-alignment; STM; W(110); XMCD; Introduction Ferromagnetic clusters and nanoparticles have gained huge interest due to their interesting fundamental

• particular, it turns out that upon impact the particles are temporarily disordered. The subsequent recrystallization happens on a ps time scale and may result in partial or full epitaxy of the particles. Thereby, the alignment with the substrate is achieved by a thermally activated ejection of dislocations

Aerosol assisted fabrication of two dimensional ZnO island arrays and honeycomb patterns with identical lattice structures

• Mitsuhiro Numata and
• Yoshihiro Koide

Beilstein J. Nanotechnol. 2010, 1, 71–74, doi:10.3762/bjnano.1.9

• -dimensional photonic crystals (PhCs) [7][8][9]. To this end, a number of techniques, including an atomic layer epitaxy [10], chemical vapor deposition [11], and photoresist patterning [12][13], have been used to deposit various morphologies of ZnO patterns on substrates. There is intense current interest in