Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

• Hiroya Tanaka,
• Shinya Ohno,
• Kazushi Miki and
• Masatoshi Tanaka

Beilstein J. Nanotechnol. 2022, 13, 172–181, doi:10.3762/bjnano.13.12

• three-dimensional metal oxide semiconductor field-effect transistors (MOSFETs) [1]. Here, formation processes of ultrathin SiO2 at the interface are considered to be quite important in determining its dielectric properties. To study procedures to fabricate gate dielectrics, it will be necessary to

Theoretical understanding of electronic and mechanical properties of 1T′ transition metal dichalcogenide crystals

• Seyedeh Alieh Kazemi,
• Sadegh Imani Yengejeh,
• Vei Wang,
• William Wen and
• Yun Wang

Beilstein J. Nanotechnol. 2022, 13, 160–171, doi:10.3762/bjnano.13.11

• well-known differences between these two phases is their electronic properties. Using MoS2 as an example, its 1T′ and 2H polytypes are discussed by presenting their DOS and band structure, as illustrated in Figure 5a. There is a bandgap in the 2H polytype, which indicates that it is a semiconductor. On

• corresponding -IpCOHP values of Mo–S bonds of the semiconductor lie within the values of the long and short Mo–S bonds in 1T′ polytypes. Figure 5b, therefore, suggests that the Mo–S bonding strength of 2H MoS2 is weaker or stronger than that of the short or long Mo–S bond, respectively, in the 1T′ phase. Figure

A comprehensive review on electrospun nanohybrid membranes for wastewater treatment

• Senuri Kumarage,
• Imalka Munaweera and
• Nilwala Kottegoda

Beilstein J. Nanotechnol. 2022, 13, 137–159, doi:10.3762/bjnano.13.10

Tin dioxide nanomaterial-based photocatalysts for nitrogen oxide oxidation: a review

• Viet Van Pham,
• Hong-Huy Tran,
• Thao Kim Truong and
• Thi Minh Cao

Beilstein J. Nanotechnol. 2022, 13, 96–113, doi:10.3762/bjnano.13.7

• working scheme of semiconductor photocatalysts for NO oxidation. Light generates holes (h+) in the valence band (VB) and electrons (e–) in the conduction band (CB) of the photocatalytic material. Electrons at the material surface will react with oxygen molecules to form superoxide radicals (•O2

• to the reduction of O2 to •O2− [31][33] and the rapid recombination rate of photoinduced electron–hole pairs [34], the photocatalytic ability of SnO2 is less efficient than that of other semiconductor photocatalysts (Figure 2b). Despite literature relating to the unfavorable CB edge of SnO2, many

• reflectance spectroscopy (DRS) [35][36][37][38][39][40]. This promotes a new avenue for diverse analyses of semiconductor photocatalysts in addition to the traditional theories and conclusions. Previous studies have shown that the photocatalytic activity of NOx decomposition of materials in general and SnO2

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• [6]. In another theoretical work, a Cr@Ge10 nanocluster was shown to be a candidate for a transition metal-doped magnetic superatom [7], which behaves as if it was one atom. Unique magnetic properties have been found in diluted magnetic semiconductor (DMS) alloys [8]. Silicon and/or germanium are a

• their magnetic defects and their interactions with charge carriers. Antiferromagnetic clusters in CrGe NWs were investigated using electron spin resonance. Spin–orbit interaction between charge carriers and magnetic defects were studied [9]. Cr/Ge nanotowers as a dilute magnetic semiconductor were

• prepared, too. Magnetic properties were measured and the growth mechanism was discussed [10]. The formation of Cr/Ge nanoparticles during the epitaxial growth of Cr/Ge films and their magnetic properties were studied to understand the ferromagnetic semiconductor behavior [11]. In this work, we made an

Nonmonotonous temperature dependence of Shapiro steps in YBCO grain boundary junctions

• Leonid S. Revin,
• Dmitriy V. Masterov,
• Alexey E. Parafin,
• Sergey A. Pavlov and
• Andrey L. Pankratov

Beilstein J. Nanotechnol. 2021, 12, 1279–1285, doi:10.3762/bjnano.12.95

• through an optical window with IR filters using a semiconductor synthesizer with a multiplier (70–78 GHz) or using a backward wave oscillator (230–370 GHz). The JJ transport properties and the response were characterized by a precise Keithley low-noise current source and nanovoltmeter using a standard 4

Impact of electron–phonon coupling on electron transport through T-shaped arrangements of quantum dots in the Kondo regime

• Patryk Florków and
• Stanisław Lipiński

Beilstein J. Nanotechnol. 2021, 12, 1209–1225, doi:10.3762/bjnano.12.89

• been observed in semiconductor-based quantum dots (QDs) [1][2][3][4], in carbon nanotubes [5], and in molecular nanostructures [6][7][8][9]. Besides the spin, also other degrees of freedom, for example, orbital [10] or charge [11][12] can give rise to Kondo correlations. For systems with higher

• studied in a number of papers [39][40][41][42][43][44]. Due to participation of localized phonons in single electron tunneling the phonon side bands appear in the spectral function of the dot. Interestingly, similar effects have been also observed in the rigid structures of semiconductor quantum dots

• embedded in a freestanding GaAs/AlGaAs membrane [44][45][46][47][48]. It has been shown that morphology manipulation of semiconductor QDs such as size, shape, strain distribution, or inhomogenities can influence the coupling strength of electron–phonon (e–ph) interactions [49]. The phononic effects appears

Morphology-driven gas sensing by fabricated fractals: A review

• Vishal Kamathe and
• Rupali Nagar

Beilstein J. Nanotechnol. 2021, 12, 1187–1208, doi:10.3762/bjnano.12.88

• ). Additionally, low cost, low power consumption, and simple fabrication of gas sensors are desirable factors. Different technologies have been used to detect numerous gases that include semiconductor, catalytic, electrochemical, optical, and acoustic gas sensors [8]. In particular, conductometric semiconductor

First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications

• Muhammad Atif Sattar,
• Najwa Al Bouzieh,
• Maamar Benkraouda and
• Noureddine Amrane

Beilstein J. Nanotechnol. 2021, 12, 1101–1114, doi:10.3762/bjnano.12.82

• -based binary chalcogenide SnX alloys (X = S, Se, and Te), the tin selenide (SnSe) compound belongs to the IV–VI semiconductor family and is the most studied TE material [1][5][31][32][33][34]. Tin selenide consists of economical, Earth-abundant, and nontoxic elements and has potential applications in

• the next generation of electronic and photonic systems [35][36]. The orthorhombic α-SnSe, an indirect bandgap (0.9 eV) semiconductor, has been an immense research topic in the TE field since the highest ZT value of ≈2.6 at 923 K was reported in the p-type single crystal along the b axis [1]. The n

• the X and Γ directions, respectively), which means that the electronic properties of the studied π-SnSe alloy provide a high value of the Seebeck coefficient [64]. The high value of the Seebeck coefficient for the studied π-SnSe semiconductor alloy shows that it can be used for building excellent TE

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• a wider choice of emission wavelengths compared to conventional lighting systems. Inorganic LED consist of inorganic semiconductor materials in the active region, for example thin films of GaAs that emit in the red to near-infrared (>700 nm) region [4]. Ga-based LED belong to the III–V group of

• semiconductors and emit from the UV to the red region of the visible spectrum via bandgap tuning (i.e., on alloying with In and Al [5][6][7]). Similarly, other active materials for quantum dot light-emitting diodes (QLED), such as the II–VI semiconductor family include ZnO, CdSe, CdS, CdTe, ZnSe, ZnS, ZnTe, and

Revealing the formation mechanism and band gap tuning of Sb₂S₃ nanoparticles

• Maximilian Joschko,
• Franck Yvan Fotue Wafo,
• Christina Malsi,
• Danilo Kisić,
• Ivana Validžić and
• Christina Graf

Beilstein J. Nanotechnol. 2021, 12, 1021–1033, doi:10.3762/bjnano.12.76

• are several requirements for materials to be eligible for application in the field of photovoltaics, such as high absorption performance, nontoxicity, abundance, efficiency, and low cost. As a semiconductor with a low band gap and a high absorption coefficient, antimony(III) sulfide (Sb2S3) has become

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

• Adem Koçyiğit,
• Adem Sarılmaz,
• Teoman Öztürk,
• Faruk Ozel and
• Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

• have revealed that the bandgap value is suitable for optoelectronic devices. To the best of our knowledge, there is no study on the electrical properties of CuNiCoS4-based photodiodes. The usage of different materials as interfacial layers in metal–semiconductor devices is a hot research topic

• regarding the development of more efficient metal–semiconductor devices such as photodiodes, photodetectors, and transistors [14][15][16]. The interfacial layer controls the current flow between metal and semiconductor and produces charge carriers under illumination [17][18]. Thiospinel CuNiCoS4

• nanocrystals can be inserted between metal and semiconductor as interfacial layer to increase the effect of the illumination and to control electrical properties of the metal–semiconductor device. In this work, CuNiCoS4 nanocrystals were successfully obtained as interlayer of Schottky diodes. The electrical

Molecular assemblies on surfaces: towards physical and electronic decoupling of organic molecules

• Sabine Maier and
• Meike Stöhr

Beilstein J. Nanotechnol. 2021, 12, 950–956, doi:10.3762/bjnano.12.71

• dielectric layers on top of the surface [34][35] or a chemical modification of the surface to saturate the dangling bonds. In surface-science-based studies, for the latter approach hydrogenation of semiconductor surfaces is frequently applied as effective passivation against chemisorption of adsorbates [36

• ][37][38][39], while also B deposition was shown to result in effective passivation of the Si surface [40][41]. In particular for electronic devices, oxidized semiconductor surfaces (e.g., silicon dioxide layers formed on bare silicon) are mostly used as substrates for fabricating devices [42]. Most of

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• difference was observed in the open-circuit voltage. The basic SC parameters JSC, VOC, FF, and Eff. as functions of the temperature are presented in Figure 7. According to [23][24], temperature has a relevant impact on semiconductor properties and the operation of solar cells. The most important equations

Prediction of Co and Ru nanocluster morphology on 2D MoS₂ from interaction energies

• Cara-Lena Nies and
• Michael Nolan

Beilstein J. Nanotechnol. 2021, 12, 704–724, doi:10.3762/bjnano.12.56

• wide range of potential applications due to the properties of a single layer, which often differ from the bulk material. They are of particular interest as ultrathin diffusion barriers in semiconductor device interconnects and as supports for low-dimensional metal catalysts. Understanding the

• is a naturally occurring transition metal dichalcogenide (TMD) and one of the most frequently studied 2D materials. Unlike graphene, MoS2 is a semiconductor, which gives it an increased number of possible applications [11][29]. Our previous first principles study [28] of the interaction of Cu species

• adsorption. The metal d-orbital contribution increases for both Co and Ru as more adatoms are added, causing the total DOS to become increasingly more metallic compared to bare MoS2, which is a semiconductor. Metal d-orbital states appear in the bandgap for as little as a single adatom. These increase in

Electromigration-induced formation of percolating adsorbate islands during condensation from the gaseous phase: a computational study

• Alina V. Dvornichenko,
• Vasyl O. Kharchenko and
• Dmitrii O. Kharchenko

Beilstein J. Nanotechnol. 2021, 12, 694–703, doi:10.3762/bjnano.12.55

• observed on silicon substrates [12][13]. Strong effects of EM were manifested in the processes of evolution of vanadium surface morphology [14], and in the epitaxial growth of semiconductor heterostructures [15]. It was found that at low deposition temperatures the growth of surface structures occurs

Nanogenerator-based self-powered sensors for data collection

• Yicheng Shao,
• Maoliang Shen,
• Yuankai Zhou,
• Xin Cui,
• Lijie Li and
• Yan Zhang

Beilstein J. Nanotechnol. 2021, 12, 680–693, doi:10.3762/bjnano.12.54

• largely influenced by the surface carrier density on the surface of the nanowires. The adsorption of gas molecules can change the surface carrier density by the shielding effect, so the output of the sensor is very sensitive to the gas concentration. Compared with traditional metal oxide semiconductor

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• (Figure 1c). The motivation for this study at the time was to investigate the invasiveness of the helium ion beam with respect to nanofabrication tasks in the semiconductor industry. Yet, the impact of this work has been far-reaching, providing a valuable benchmark for a range of applications focused on

• et al. also observed semiconductor–insulator–metal transitions for increasing dose, noting preferential sputtering of selenium [29]. Here it was found that for a given dose, hole transport was degraded more than electron transport. The authors went on to demonstrate a lateral p–n-like homojunction by

• by localized helium ion irradiation. For example, using a helium ion dose of 5 × 1014 ions/cm2, permanent local tuning of the charge density in an amorphous thin film of the semiconductor indium gallium zinc oxide (film thickness 50 nm) has been demonstrated, thereby enabling activation of the

Nanoporous and nonporous conjugated donor–acceptor polymer semiconductors for photocatalytic hydrogen production

• Zhao-Qi Sheng,
• Yu-Qin Xing,
• Yan Chen,
• Guang Zhang,
• Shi-Yong Liu and
• Long Chen

Beilstein J. Nanotechnol. 2021, 12, 607–623, doi:10.3762/bjnano.12.50

• semiconductor via photoinduced D→A charge transfer. Structures of triazine-based conjugated polymers. Proposed model fragments and electron density differences of M1–M3 in P8. Adapted with permission from [49]. Copyright (2019) American Chemical Society. This content is not subject to CC BY 4.0. Schematic

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

• Piotr Caban,
• Rafał Pietruszka,
• Jarosław Kaszewski,
• Monika Ożga,
• Bartłomiej S. Witkowski,
• Krzysztof Kopalko,
• Piotr Kuźmiuk,
• Katarzyna Gwóźdź,
• Ewa Płaczek-Popko,
• Krystyna Lawniczak-Jablonska and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

• arsenide is a known and intensively studied phenomenon in semiconductor industry [4]. The air exposure of GaAs surface results in an immediate appearance of different oxides of various compositions (e.g., AsO, As2O, As2O3, GaO, Ga2O, Ga2O3, GaAsO3, and GaAsO4) as well as of elemental arsenic [5][6][7]. The

• presence of an amorphous film of native oxides gives rise to midgap surface states in GaAs [8] which results in Fermi-level pinning [9]. Due to a high surface-related recombination velocity, a decrease in the photoluminescence (PL) of the semiconductor is also observed [7]. These phenomena have strong and

• negative impact on the performance of GaAs-based microelectronic and optoelectronic devices [10][11]. Therefore, in order to take advantage of the properties of gallium arsenide [12], its interface with a dielectric or other semiconductor partner must be carefully prepared. This can be obtained either by

Interface interaction of transition metal phthalocyanines with strontium titanate (100)

• Reimer Karstens,
• Thomas Chassé and
• Heiko Peisert

Beilstein J. Nanotechnol. 2021, 12, 485–496, doi:10.3762/bjnano.12.39

• theoretical approaches [6]. Possible applications of STO/organic interfaces include FETs [7][8], photodiodes [9], and organic spin valves[10]. Strontium titanate is a semiconductor with an indirect band gap of 3.25 eV [11] crystallizing in a perovskite structure with cubic unit cell. The conductivity can be

• slightly different position of the Fermi level in the gap of the STO semiconductor. Upon evaporation of the organic molecules, no changes of the peak shape can be detected, pointing to the absence of chemical interactions involving Ti atoms at the interface. However, we note that the surface sensitivity at

Boosting of photocatalytic hydrogen evolution via chlorine doping of polymeric carbon nitride

• Malgorzata Aleksandrzak,
• Michalina Kijaczko,
• Wojciech Kukulka,
• Daria Baranowska,
• Martyna Baca,
• Beata Zielinska and
• Ewa Mijowska

Beilstein J. Nanotechnol. 2021, 12, 473–484, doi:10.3762/bjnano.12.38

• semiconductor polymer, as a metal-free and visible-light-responsive photocatalyst, has attracted dramatically growing attention in the field of visible-light-induced hydrogen evolution reaction (HER). It is characterized by facile synthesis, easy functionalization, attractive electronic band structure, and

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• the wires. For instance, Au, generally used as catalyst for the growth of various semiconductor NWs, acts as a deep-level trap in germanium bulk and NWs, modifying the electronic transport properties [5]. Strain-induced elongation is a mechanism [34] that can lead to either epitaxial or endotaxial

Nickel nanoparticle-decorated reduced graphene oxide/WO₃ nanocomposite – a promising candidate for gas sensing

• Ilka Simon,
• Alexandr Savitsky,
• Rolf Mülhaupt,
• Vladimir Pankov and
• Christoph Janiak

Beilstein J. Nanotechnol. 2021, 12, 343–353, doi:10.3762/bjnano.12.28

• 200 to 400 °C, which means a high power consumption [4]. WO3 is a wide-bandgap [12][13] n-type semiconductor [14][15] with good sensitivity towards NO2 [16] and CO [17]. Known successful routes to improve the MOS gas sensing performance are doping with transition metals, decoration with noble metals

• , and greater stability than pure WO3 [20]. WO3 decorated with palladium nanoparticles on the surface can be used as an improved and reusable gas sensor for NH3 [21]. Metal oxide semiconductor junctions can either be formed between two p-type MOS or two n-type MOS (p–p/n–n homojunctions) or between a p

• high response to gas molecules at room temperature [30]. A disadvantage of rGO gas sensors is the long recovery time because of the high binding force between gas molecules and the graphene material [31]. rGO is a p-type semiconductor and can be used for gas sensing of low concentrations of NO2 at room

Extended iron phthalocyanine islands self-assembled on a Ge(001):H surface

• Rafal Zuzak,
• Marek Szymonski and
• Szymon Godlewski

Beilstein J. Nanotechnol. 2021, 12, 232–241, doi:10.3762/bjnano.12.19

• analysis of single FePc molecules trapped at surface defects indicates that the molecules stay intact upon adsorption and can be manipulated away from surface defects onto a perfectly hydrogenated surface. This allows for their isolation from the germanium surface. Keywords: hydrogenated semiconductor

• on hydrogen-passivated Si or Ge surfaces [36][37][38][39]. For instance, it has been shown that on Ge(001):H those molecules form hexagonal islands composed from flat-lying molecules that are sufficiently decoupled from the underlying semiconductor [36]. Vicinal Si(001):H has been applied in order to

• from the influence of the underlying germanium by the passivating hydrogen layer. This is in line with previous reports showing that other organic compounds are well decoupled from the surface by hydrogen, unless they are contacted with the underlying semiconductor through atomic-scale defects, that is