Electrostatically actuated encased cantilevers

• Benoit X. E. Desbiolles,
• Gabriela Furlan,
• Adam M. Schwartzberg,
• Paul D. Ashby and
• Dominik Ziegler

Beilstein J. Nanotechnol. 2018, 9, 1381–1389, doi:10.3762/bjnano.9.130

• . Beginning with gold-coated silicon cantilevers (NSC 19, Mikromasch) (1), we use chemical vapor deposition to coat a 11 μm thick sacrificial polymer layer followed by a 2 μm thick parylene layer. The first layer serves as sacrificial film that defines the air gap and the parylene builds the encasement. Next

Chemistry for electron-induced nanofabrication

• Petra Swiderek,
• Hubertus Marbach and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2018, 9, 1317–1320, doi:10.3762/bjnano.9.124

• chemical vapor deposition (CVD), which is a thermally driven process [6]. Consequently, these precursors are optimized with respect to thermal chemistry and do not necessarily perform well in the electron-driven FEBID process. In fact, they often experience incomplete fragmentation so that material from

Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate

• Aiden A. Martin and
• Philip J. Depond

Beilstein J. Nanotechnol. 2018, 9, 1282–1287, doi:10.3762/bjnano.9.120

• at rates comparable to conventional techniques such as laser-induced chemical vapor deposition. The deposition rate and stoichiometry of boron oxide fabricated by EBID using trimethyl borate (TMB) as precursor is found to be critically dependent on the substrate temperature. By comparing the

• and undergoes subsequent reaction with an electron beam. The process has major advantages over thermal chemical vapor deposition (CVD) processes one of which being that the substrate is not exposed to the elevated temperatures required for the thermal decomposition of precursor molecules. To date, the

A novel copper precursor for electron beam induced deposition

• Caspar Haverkamp,
• George Sarau,
• Mikhail N. Polyakov,
• Ivo Utke,
• Marcos V. Puydinger dos Santos,
• Silke Christiansen and
• Katja Höflich

Beilstein J. Nanotechnol. 2018, 9, 1220–1227, doi:10.3762/bjnano.9.113

• deposition should furthermore provide for conductive deposits with a preferably high copper content. Here, the metal-organic precursor bis(tert-butylacetoacetato)Cu(II) (CAS: 23670-45-3, C16H26CuO6) is introduced as a fluorine-free alternative. This precursor is known from chemical vapor deposition (CVD

Review on nanoparticles and nanostructured materials: history, sources, toxicity and regulations

• Jaison Jeevanandam,
• Ahmed Barhoum,
• Yen S. Chan,
• Alain Dufresne and
• Michael K. Danquah

Beilstein J. Nanotechnol. 2018, 9, 1050–1074, doi:10.3762/bjnano.9.98

• morphologies such as hollow tubes, ellipsoids or spheres. Fullerenes (C60), carbon nanotubes (CNTs), carbon nanofibers, carbon black, graphene (Gr), and carbon onions are included under the carbon-based NMs category. Laser ablation, arc discharge, and chemical vapor deposition (CVD) are the important

Single-crystalline FeCo nanoparticle-filled carbon nanotubes: synthesis, structural characterization and magnetic properties

• Rasha Ghunaim,
• Maik Scholz,
• Christine Damm,
• Bernd Rellinghaus,
• Rüdiger Klingeler,
• Bernd Büchner,
• Michael Mertig and
• Silke Hampel

Beilstein J. Nanotechnol. 2018, 9, 1024–1034, doi:10.3762/bjnano.9.95

• the filling material due to the confinement of the material within the hollow tubular cavity. Chemical vapor deposition (CVD) is a technique used to fill MNPs into CNTs via in situ filling, in which metallocene precursors are used as a carbon source and MNPs [22][30][37] or hydrocarbons (such as

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• sputtering [7], e-beam [16], physical vapor deposition [17], chemical vapor deposition (CVD) [18], and atomic layer deposition (ALD). The latter has been explored by using different precursors, e.g., Ce(thd)4, Ce(iPrCp)3 and Ce(mmp)4) [19][20][21][22][23], obtaining as-deposited film with polycrystalline

The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene

• Egor A. Kolesov,
• Mikhail S. Tivanov,
• Olga V. Korolik,
• Olesya O. Kapitanova,
• Xiao Fu,
• Hak Dong Cho,
• Tae Won Kang and
• Gennady N Panin

Beilstein J. Nanotechnol. 2018, 9, 704–710, doi:10.3762/bjnano.9.65

• , graphene functionalization techniques, and taking into account adsorption effects during nanoelectronic device engineering. Experimental Graphene was synthesized on Cu foil at 1020 °C by a chemical vapor deposition (CVD) method using a mixture of CH4 of 40 sccm and H2 of 10 sccm. Cu foil (Alfa Aesar

Sensing behavior of flower-shaped MoS₂ nanoflakes: case study with methanol and xylene

• Maryam Barzegar,
• Masoud Berahman and
• Azam Iraji zad

Beilstein J. Nanotechnol. 2018, 9, 608–615, doi:10.3762/bjnano.9.57

• methods have been applied to synthesize single or few-layered MoS2, including but not limited to mechanical cleavage, chemical exfoliation, hydrothermal synthesis and chemical vapor deposition [16][17][18][19][20][21][22][23]. The hydrothermal process is a scalable method to synthesize MoS2 nanosheets and

Engineering of oriented carbon nanotubes in composite materials

• Razieh Beigmoradi,
• Abdolreza Samimi and
• Davod Mohebbi-Kalhori

Beilstein J. Nanotechnol. 2018, 9, 415–435, doi:10.3762/bjnano.9.41

• arrangement of CNTs and sorting of nanofibers are done at the same time, as shown in Figure 9 [70]. Recently, direct spinning to a vertical chemical vapor deposition (CVD) synthesis zone has also been studied and is under development to produce CNT fibers and ribbons [44][71]. In a vertical CVD reactor, the

• of a wide range of materials, spraying can be combined with other methods to fabricate composite materials. In this method, a sheet of CNTs is produced by chemical vapor deposition (CVD) on a SiO2/Si substrate that is coated with a very thin layer of iron as a catalyst. The CNT rows have been grown

Electron interaction with copper(II) carboxylate compounds

• Michal Lacko,
• Peter Papp,
• Iwona B. Szymańska,
• Edward Szłyk and
• Štefan Matejčík

Beilstein J. Nanotechnol. 2018, 9, 384–398, doi:10.3762/bjnano.9.38

• remains and forms the layer. Activation of the precursor molecules can be induced by several processes. For instance, a catalytic or a thermal dissociation can occur. Plasma activated processes such as plasma enhanced chemical vapor deposition (PECVD) can be used for coating of the surface [1]. In the

Gas-assisted silver deposition with a focused electron beam

• Luisa Berger,
• Katarzyna Madajska,
• Iwona B. Szymanska,
• Katja Höflich,
• Mikhail N. Polyakov,
• Jakub Jurczyk,
• Carlos Guerra-Nuñez and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 224–232, doi:10.3762/bjnano.9.24

• (AgO2CC2F5), for silver FEBID based on reported successful chemical vapor deposition (CVD) experiments yielding silver films at moderate temperatures of around ≤200 °C [16]. This carboxylate compound showed to be susceptible to electron-induced dissociation, but it requires thermal conditions outside the

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• offer a new degree of freedom due to possible confinement effects. It has been previously demonstrated that GaN NTs may be synthesized using the following methods: 1) chemical vapor deposition of nitrogen precursor with gallium precursor in the presence of catalysts such as Ni, In or Au [11][12][13]; 2

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

• Kristjan Kalam,
• Helina Seemen,
• Peeter Ritslaid,
• Mihkel Rähn,
• Aile Tamm,
• Kaupo Kukli,
• Aarne Kasikov,
• Joosep Link,
• Raivo Stern,
• Salvador Dueñas,
• Helena Castán and
• Héctor García

Beilstein J. Nanotechnol. 2018, 9, 119–128, doi:10.3762/bjnano.9.14

• terms of the chemical composition. Altogether, 220–235 ALD cycles were deposited to obtain each thin film. The films were grown on various substrates: Si(100) and highly doped conductive Si substrates covered by a 10 nm TiN film grown by chemical vapor deposition. Before deposition, the Si(100) was

• , the separation is not perfect during the actual operation. The adsorption waves may partially overlap and meet in the vicinity of the substrate surface, causing the chemical vapor deposition to be less controlled. At the leading edge, the film thickness is usually higher and gradually decreases

Response under low-energy electron irradiation of a thin film of a potential copper precursor for focused electron beam induced deposition (FEBID)

• Leo Sala,
• Iwona B. Szymańska,
• Céline Dablemont,
• Anne Lafosse and
• Lionel Amiaud

Beilstein J. Nanotechnol. 2018, 9, 57–65, doi:10.3762/bjnano.9.8

• , Poland, for chemical vapor deposition (CVD) [6][7][8]. Among these complexes, two different compounds, [Cu2(EtNH2)2(μ-O2CC3F7)4] and [Cu2(EtNH2)2(μ-O2CC2F5)4] (Figure 1) will be studied in the present paper and hereafter named as compound A and compound B, respectively. They differ only by the length of

Electro-optical characteristics of a liquid crystal cell with graphene electrodes

• Nune H. Hakobyan,
• Hakob L. Margaryan,
• Valeri K. Abrahamyan,
• Vladimir M. Aroutiounian,
• Arpi S. Dilanchian Gharghani,
• Amalya B. Kostanyan,
• Timothy D. Wilkinson and
• Nelson Tabirian

Beilstein J. Nanotechnol. 2017, 8, 2802–2806, doi:10.3762/bjnano.8.279

• . Results and Discussion Synthesis of graphene films The graphene was obtained by a chemical vapor deposition (CVD) process. Details of synthesis and extensive characterization of the CVD graphene can be found in prior works [13][14]. The monolayer graphene film was then transferred from the Cu foil to a

The rational design of a Au(I) precursor for focused electron beam induced deposition

• Ali Marashdeh,
• Thiadrik Tiesma,
• Niels J. C. van Velzen,
• Sjoerd Harder,
• Remco W. A. Havenith,
• Jeff T. M. De Hosson and
• Willem F. van Dorp

Beilstein J. Nanotechnol. 2017, 8, 2753–2765, doi:10.3762/bjnano.8.274

• , but non-volatile [12]. MeAuPMe3 has been used for chemical vapor deposition (CVD) [51][52] and can be used for FEBIP. However, the electron-induced dissociation is incomplete, with just a single methyl ligand being removed [12]. The studies of Au(I) compounds that have been made so far have raised

• -volatile. ClAuPMe3 and ClAuPEt3 are hence not useful as FEBIP precursor. However, replacing the Cl ligand with a Me ligand improves the volatility. MeAuPMe3 is chemically stable enough to act as a precursor for FEBIP (and chemical vapor deposition) and crystallizes with six molecules in an asymmetric unit

CdSe nanorod/TiO₂ nanoparticle heterojunctions with enhanced solar- and visible-light photocatalytic activity

• Fakher Laatar,
• Hatem Moussa,
• Halima Alem,
• Lavinia Balan,
• Emilien Girot,
• Ghouti Medjahdi,
• Hatem Ezzaouia and
• Raphaël Schneider

Beilstein J. Nanotechnol. 2017, 8, 2741–2752, doi:10.3762/bjnano.8.273

• . used chemical vapor deposition to associate CdS, CdSe or CdSeS rods to TiO2 NRs arrays and demonstrated that the CdSeS/TiO2 heterostructure exhibits the highest performances as photoelectrode [39]. More recently, small CdSe NRs [40] or type II CdSe/CdSexTe1−x NRs [41] were also used as light harvesters

Dry adhesives from carbon nanofibers grown in an open ethanol flame

• Christian Lutz,
• Julia Syurik,
• C. N. Shyam Kumar,
• Christian Kübel,
• Michael Bruns and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2017, 8, 2719–2728, doi:10.3762/bjnano.8.271

• in a closed chamber. The standard process for their growth is chemical vapor deposition (CVD) [3], which results in randomly oriented structures, whereas a plasma-enhanced CVD (PECVD) [4] allows for the growth of aligned structures. During growth of 1D-CNs, oxidized catalytic centers reduce into

One-step chemical vapor deposition synthesis and supercapacitor performance of nitrogen-doped porous carbon–carbon nanotube hybrids

• Egor V. Lobiak,
• Lyubov G. Bulusheva,
• Ekaterina O. Fedorovskaya,
• Yury V. Shubin,
• Pavel E. Plyusnin,
• Pierre Lonchambon,
• Boris V. Senkovskiy,
• Zinfer R. Ismagilov,
• Emmanuel Flahaut and
• Alexander V. Okotrub

Beilstein J. Nanotechnol. 2017, 8, 2669–2679, doi:10.3762/bjnano.8.267

• , 630090 Novosibirsk, Russia, Institute of Coal Chemistry and Materials Science FRC CCC SB RAS, Kemerovo 650000, Russia 10.3762/bjnano.8.267 Abstract Novel nitrogen-doped carbon hybrid materials consisting of multiwalled nanotubes and porous graphitic layers have been produced by chemical vapor deposition

• prepared hybrid materials [6][7][8][9]. Another less common strategy consists of CNT growth by catalytic chemical vapor deposition (CCVD) over catalyst nanoparticles predeposited on the graphitic surfaces [10][11][12][13]. The obtained hybrids are characterized by tight bonding between the components

Synthesis of [{AgO₂CCH₂OMe(PPh₃)}_n] and theoretical study of its use in focused electron beam induced deposition

• Jelena Tamuliene,
• Julian Noll,
• Peter Frenzel,
• Tobias Rüffer,
• Alexander Jakob,
• Bernhard Walfort and
• Heinrich Lang

Beilstein J. Nanotechnol. 2017, 8, 2615–2624, doi:10.3762/bjnano.8.262

• beam induced deposition (FEBID) is a cost efficient direct resist-free chemical vapor deposition technique producing free-standing 3D metal-containing nanoscale structures in a single step on, for example, surfaces of sub-10 nm size using a variety of materials with a high degree of spatial and time

• -domain control [1][2][3]. Up to now, FEBID relies on the chemical availability of chemical vapor deposition (CVD) precursors. However, such precursors are not optimized for the electron-driven FEBID process and hence molecular precursors particularly adapted to its underlying electron-induced

• -bonded PPh3 group could be detected under the measurement conditions applied (Experimental, Figure 5). To show, if 2 is a suitable FEBID or chemical vapor deposition (CVD) precursor for the deposition of silver, vapor pressure measurements of 2 were undertaken (Figure 6). In order to determine the

Localized growth of carbon nanotubes via lithographic fabrication of metallic deposits

• Fan Tu,
• Martin Drost,
• Imre Szenti,
• Janos Kiss,
• Zoltan Kónya and
• Hubertus Marbach

Beilstein J. Nanotechnol. 2017, 8, 2592–2605, doi:10.3762/bjnano.8.260

• morphology, for example, as individual nanotubes or as CNT forests. Electron beam induced deposition (EBID) with subsequent autocatalytic growth (AG) was applied to lithographically produce catalytically active seeds for the localized growth of CNTs via chemical vapor deposition (CVD). With the precursor Fe

• storage [1][2][3][4]. The most common synthesis method for CNTs is chemical vapor deposition (CVD) [5][6][7][8], in which statistically distributed, metal-containing particles act as catalysts for CNT growth. Thereby, not only does the random position of the catalyst particles determine the position of

• (300:30:30 sccm). (d) Auger electron spectrum of the indicated Fe deposit. SEM micrographs of Fe EBID deposits before and after the chemical vapor deposition (CVD) experiment (1163 K, N2:H2:C2H4 300:30:30 sccm). Fe deposits fabricated with (a) 0.25 nC, (b) 0.5 nC, (c) 1.2 nC electron dose per point. (d

Interface conditions of roughness-induced superoleophilic and superoleophobic surfaces immersed in hexadecane and ethylene glycol

• Yifan Li,
• Yunlu Pan and
• Xuezeng Zhao

Beilstein J. Nanotechnol. 2017, 8, 2504–2514, doi:10.3762/bjnano.8.250

• function layer (thickness ca. 20 nm) by chemical vapor deposition (CVD), one drop (about 0.1 mL) of methyltrichlorosilane (methylsilane, Sigma Aldrich) was placed next to the samples under sealing and left for 10 h. To prepare the superoleophobic surface, the same materials and processes as for

Increasing the stability of DNA nanostructure templates by atomic layer deposition of Al₂O₃ and its application in imprinting lithography

• Hyojeong Kim,
• Kristin Arbutina,
• Anqin Xu and
• Haitao Liu

Beilstein J. Nanotechnol. 2017, 8, 2363–2375, doi:10.3762/bjnano.8.236

• the exposed substrate through shadow gaps was etched to generate trenches with linewidths of sub-10 nm resolution [32]. By differentiating the adsorption of water between DNA nanostructures and a SiO2 substrate, the rates of HF vapor-phase etching of the SiO2 substrate [33] and of chemical vapor

• deposition of SiO2 and TiO2 on the DNA nanostructures and the substrate [34] were modulated to replicate the patterns of the DNA nanostructures into those of the inorganic oxides. In both cases, the patterns of the nanostructures were transferred in both positive tone and negative tone at room temperature

Changes of the absorption cross section of Si nanocrystals with temperature and distance

• Michael Greben,
• Petro Khoroshyy,
• Sebastian Gutsch,
• Daniel Hiller,
• Margit Zacharias and
• Jan Valenta

Beilstein J. Nanotechnol. 2017, 8, 2315–2323, doi:10.3762/bjnano.8.231

• of silicon-rich silicon oxynitride (SRON: SiOxNy) with 4.5 nm thickness and of stoichiometric SiO2 (1, 1.6, 2.2 or 2.8 nm thick) on fused silica substrates by plasma-enhanced chemical vapor deposition (PECVD). On top and below the superlattice stack, 10 nm of SiO2 were deposited as a buffer and