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Search for "magnetron" in Full Text gives 144 result(s) in Beilstein Journal of Nanotechnology.

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

  • Ionel Stavarache,
  • Valentin Adrian Maraloiu,
  • Petronela Prepelita and
  • Gheorghe Iordache

Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142

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  • ], implantation [26], RF magnetron sputtering [27]. However, for most of these approaches, thermal treatments were necessary after the deposition process in order to obtain high-quality nanostructures based on crystalline Ge [28]. The most important parameter to be finely tuned is the substrate temperature during
  • of Ge-nps embedded in SiO2 thin film are summarized. The influence of the temperature on the photodetector test structure, fabricated on substrates at 300, 400 and 500 °C is also described. In Figure 1, the diffractograms recorded of thin films deposited by RF magnetron sputtering on substrates at
  • thin films during deposition at temperatures lower than those necessary for nanostructuring Ge-nps by thermal annealing after deposition. To optimize the substrate temperature, Al/n-Si/Ge:SiO2/ITO photodetector test structures have been fabricated by magnetron sputtering at low temperatures of 300, 400
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Published 21 Oct 2016

A composite structure based on reduced graphene oxide and metal oxide nanomaterials for chemical sensors

  • Vardan Galstyan,
  • Elisabetta Comini,
  • Iskandar Kholmanov,
  • Andrea Ponzoni,
  • Veronica Sberveglieri,
  • Nicola Poli,
  • Guido Faglia and
  • Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2016, 7, 1421–1427, doi:10.3762/bjnano.7.133

Graphical Abstract
  • ZnO nanostructures is similar to that described in our previous work [24]. Thin films of metallic Zn with a thickness of 600 nm were deposited on 2 mm square alumina substrates by means of radio frequency (RF) magnetron sputtering. Thin deposited films of Zn were anodized in 2 M oxalic acid dihydrate
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Published 10 Oct 2016

Dealloying of gold–copper alloy nanowires: From hillocks to ring-shaped nanopores

  • Adrien Chauvin,
  • Cyril Delacôte,
  • Mohammed Boujtita,
  • Benoit Angleraud,
  • Junjun Ding,
  • Chang-Hwan Choi,
  • Pierre-Yves Tessier and
  • Abdel-Aziz El Mel

Beilstein J. Nanotechnol. 2016, 7, 1361–1367, doi:10.3762/bjnano.7.127

Graphical Abstract
  • nodular growth triggered by the presence of surface defects created intentionally on the substrate as well as the high tilt angle between the magnetron source axis and the normal to the substrate, metal nanowires containing hillocks emerging out of the surface can be created. The approach is demonstrated
  • them into residues (Figure 1a(3)). The existence of photoresist residues is related to the non-homogenous etching of the polymers forming the photoresist. In the last stage, the metal is deposited by magnetron sputtering over the prepared substrate to form an array of nanowires containing hillocks
  • by a shadowing effect. This shadowing effect is enhanced by the fact that the angle between the magnetron source axis and the normal to the substrate was 30°. During the early stage of deposition (Figure 4(2)), the metal grows non-uniformly on the photoresist residues. The film is thick at the top
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Published 29 Sep 2016

Fast diffusion of silver in TiO2 nanotube arrays

  • Wanggang Zhang,
  • Yiming Liu,
  • Diaoyu Zhou,
  • Hui Wang,
  • Wei Liang and
  • Fuqian Yang

Beilstein J. Nanotechnol. 2016, 7, 1129–1140, doi:10.3762/bjnano.7.105

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  • Education, Taiyuan Shanxi 030024, China Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY 40506, USA 10.3762/bjnano.7.105 Abstract Using magnetron sputtering and heat treatment, Ag@TiO2 nanotubes are prepared. The effects of heat-treatment temperature and heating time
  • the outmost surface of TiO2 nanotubes. Probably there are hardly any Ag nanocrystals formed inside the TiO2 nanotubes through the migration of Ag. Keywords: activation energy; fast diffusion; magnetron sputtering; silver; TiO2 nanotube; Introduction Titanium dioxide (TiO2) has gained great attention
  • aqueous solutions. In addition, the technique of magnetron sputtering has been used to deposit Ag nanostructures on the surface of TiO2 nanotube arrays. It is worth mentioning that Enachi et al. [25] heat-treated the TiO2 nanotube arrays after the deposition of Ag film of 50 nm on the top surface of TiO2
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Published 03 Aug 2016

Customized MFM probes with high lateral resolution

  • Óscar Iglesias-Freire,
  • Miriam Jaafar,
  • Eider Berganza and
  • Agustina Asenjo

Beilstein J. Nanotechnol. 2016, 7, 1068–1074, doi:10.3762/bjnano.7.100

Graphical Abstract
  • thin film with no buffer layer, using a custom-built AC magnetron sputtering system with a substrate holder designed on purpose to favour the growth of the magnetic layer on one side of the pyramidal tip. The deposition parameters are carefully chosen to yield highly flat surfaces with small grain size
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Published 25 Jul 2016

A terahertz-vibration to terahertz-radiation converter based on gold nanoobjects: a feasibility study

  • Kamil Moldosanov and
  • Andrei Postnikov

Beilstein J. Nanotechnol. 2016, 7, 983–989, doi:10.3762/bjnano.7.90

Graphical Abstract
  • practical source of microwave radiation, a magnetron of a domestic microwave oven is suggested, that operates at ν = 2.45 GHz. In this case, hν ≈ 1.01·10−2 meV 17.4 meV, so that the approximation holds and the approximation in Equation 1 is valid. A substrate with multiple GNBs is placed into the oven
  • chamber, where the GNBs are exposed to both direct irradiation from the magnetron and to that reflected from the chamber walls. Effectively, the microwave photons could be absorbed anyway inside the GNBs, where consequently the THz photons will be emitted. The resulting THz radiation is channeled out of
  • : magnetron (ν = 2.45 GHz), 3: substrate with densely deposited GNBs or GNRs, 4: THz band resonance filter (ν0 = 4.2 THz), 5: lens, 6: object to be studied. Acknowledgements We thank Dr. Muñoz and Dr. Kresch for useful discussions of their measurements of the phonon spectrum in gold.
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Published 06 Jul 2016

Thickness dependence of the triplet spin-valve effect in superconductor–ferromagnet–ferromagnet heterostructures

  • Daniel Lenk,
  • Vladimir I. Zdravkov,
  • Jan-Michael Kehrle,
  • Günter Obermeier,
  • Aladin Ullrich,
  • Roman Morari,
  • Hans-Albrecht Krug von Nidda,
  • Claus Müller,
  • Mikhail Yu. Kupriyanov,
  • Anatolie S. Sidorenko,
  • Siegfried Horn,
  • Rafael G. Deminov,
  • Lenar R. Tagirov and
  • Reinhard Tidecks

Beilstein J. Nanotechnol. 2016, 7, 957–969, doi:10.3762/bjnano.7.88

Graphical Abstract
  • sample series investigated in this work was prepared by magnetron sputtering at room temperature on a commercial silicon substrate with a {111} surface. While for the sputtering of the niobium layers, the target was moved over the substrate to obtain a smooth layer of nearly constant thickness, the
  • Cu41Ni59 layer was deposited on the substrate positioned off-axis below the sputtering target to utilize the natural sputtering gradient of magnetron sputtering to obtain a wedge of varying thickness. Subsequently, the Co layer was deposited on the substrate without moving the target. Finally, the CoOx
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Published 04 Jul 2016

In situ observation of deformation processes in nanocrystalline face-centered cubic metals

  • Aaron Kobler,
  • Christian Brandl,
  • Horst Hahn and
  • Christian Kübel

Beilstein J. Nanotechnol. 2016, 7, 572–580, doi:10.3762/bjnano.7.50

Graphical Abstract
  • be separated from real local crystallographic changes [38]. In situ ACOM-STEM is applied to magnetron-sputtered NC thin film samples exhibiting a predominately columnar grain structure. In the following, we concentrate on results from an annealed NC Pd (ncPda) thin film with ≈50 nm thickness
  • by radio frequency (RF) magnetron sputtering using 2" diameter planar targets with 99.95% purity. TEM grids (holycarbon R2/1 + 2 nm C, Quantifoil) were used as a substrate. The nominal thickness between the holes is 22 nm. Pd was sputtered in 5 cycles of 50.38 s at 60 W constant sputtering power
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Published 19 Apr 2016

Determination of the compositions of the DIGM zone in nanocrystalline Ag/Au and Ag/Pd thin films by secondary neutral mass spectrometry

  • Gábor Y. Molnár,
  • Shenouda S. Shenouda,
  • Gábor L. Katona,
  • Gábor A. Langer and
  • Dezső L. Beke

Beilstein J. Nanotechnol. 2016, 7, 474–483, doi:10.3762/bjnano.7.41

Graphical Abstract
  • )/substrate, as well as Pd(30 nm)/Ag(30 nm)/substrate thin film systems were produced by magnetron sputtering onto single crystalline Si substrates with native SiO2 layers at room temperature. The base pressure in the sputtering chamber was below 2 × 10−5 Pa. During the deposition, the Ar (99.999%) pressure
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Published 22 Mar 2016

Chemical bath deposition of textured and compact zinc oxide thin films on vinyl-terminated polystyrene brushes

  • Nina J. Blumenstein,
  • Caroline G. Hofmeister,
  • Peter Lindemann,
  • Cheng Huang,
  • Johannes Baier,
  • Andreas Leineweber,
  • Stefan Walheim,
  • Christof Wöll,
  • Thomas Schimmel and
  • Joachim Bill

Beilstein J. Nanotechnol. 2016, 7, 102–110, doi:10.3762/bjnano.7.12

Graphical Abstract
  • emitting diodes, as surface acoustic wave generators or for field effect transistors [1][2][3][4][5][6][7][8]. Up to now, the fabrication of nanosized devices requires complex techniques like magnetron sputtering or pulsed laser deposition. Therefore, it is of high interest to develop easy-to-handle
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Published 25 Jan 2016

Plasma fluorination of vertically aligned carbon nanotubes: functionalization and thermal stability

  • Claudia Struzzi,
  • Mattia Scardamaglia,
  • Axel Hemberg,
  • Luca Petaccia,
  • Jean-François Colomer,
  • Rony Snyders and
  • Carla Bittencourt

Beilstein J. Nanotechnol. 2015, 6, 2263–2271, doi:10.3762/bjnano.6.232

Graphical Abstract
  • performed using plasma treatment in a magnetron sputtering chamber with fluorine diluted in an argon atmosphere with an Ar/F2 ratio of 95:5. The effect of heavily diluted fluorine in the precursor gas mixture is investigated by evaluating the modifications in the nanotube structure and the electronic
  • a fine selection of grafted species and tuning of electronic properties. Experimental vCNTs were produced by catalytic chemical vapor deposition (CCVD) at atmospheric pressure. The catalysts were prepared by magnetron sputtering; first, a 30 nm Al2O3 buffer layer was deposited on Si wafers with
  • additional flow of hydrogen (120 sccm) was introduced. After 5 min, Ar was replaced by ethylene (C2H4) flow (50 sccm) for 20 min. After the growth, the oven atmosphere was again filled with Ar. Fluorination was performed by exposing the vCNTs samples to fluorine chemical species generated in a magnetron
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Published 01 Dec 2015

Effect of SiNx diffusion barrier thickness on the structural properties and photocatalytic activity of TiO2 films obtained by sol–gel dip coating and reactive magnetron sputtering

  • Mohamed Nawfal Ghazzal,
  • Eric Aubry,
  • Nouari Chaoui and
  • Didier Robert

Beilstein J. Nanotechnol. 2015, 6, 2039–2045, doi:10.3762/bjnano.6.207

Graphical Abstract
  • diffraction decreased for the sol–gel coating, whereas it remained unchanged for the film made by the reactive sputtering method. According to Scherrer's equation [15], the crystallite size was estimated for the TiO2 sol–gel (SG-TiO2) coating and the magnetron sputtered TiO2 (MS-TiO2) grown on the glass and
  • much thicker SiNx diffusion barrier [6]. This suggests that the crystallite size of the TiO2 films obtained by magnetron sputtering does not depend on the thickness of the SiNx. Furthermore, no difference has been observed between the crystallite size of the MS-TiO2 films grown on SLG or on SiNx/SLG
  • from the reactive magnetron sputtering process show a preferential (004) orientation plane. Regardless of the process used to synthesize the TiO2 films, the intercalating SiNx diffusion barrier between the photocatalyst and the soda lime glass showed a beneficial effect on the photocatalytic efficiency
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Published 16 Oct 2015

Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte

  • Sanghoon Ji,
  • Waqas Hassan Tanveer,
  • Wonjong Yu,
  • Sungmin Kang,
  • Gu Young Cho,
  • Sung Han Kim,
  • Jihwan An and
  • Suk Won Cha

Beilstein J. Nanotechnol. 2015, 6, 1805–1810, doi:10.3762/bjnano.6.184

Graphical Abstract
  • film, a gas mixture of Ar and O2 in the volumetric ratio of 80:20 was used. Background pressure was kept at 1.3 Pa during deposition. Radio frequency magnetron power of a sputtering gun was set to 50 W. A two inch-sized YSZ disk pellet with an 8 mol % Y2O3 was used as the target. For deposition of the
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Published 27 Aug 2015

Magnetic properties of iron cluster/chromium matrix nanocomposites

  • Arne Fischer,
  • Robert Kruk,
  • Di Wang and
  • Horst Hahn

Beilstein J. Nanotechnol. 2015, 6, 1158–1163, doi:10.3762/bjnano.6.117

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  • newly developed UHV cluster ion beam deposition apparatus, which is described elsewhere [2]. Fe clusters are produced in a Haberland-type magnetron sputtering/gas aggregation cluster source. Extracted anions are accelerated by electrostatic lenses and mass-separated in a 90° sector magnet. The mass
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Published 13 May 2015

Fabrication of high-resolution nanostructures of complex geometry by the single-spot nanolithography method

  • Alexander Samardak,
  • Margarita Anisimova,
  • Aleksei Samardak and
  • Alexey Ognev

Beilstein J. Nanotechnol. 2015, 6, 976–986, doi:10.3762/bjnano.6.101

Graphical Abstract
  • were sputtered with a magnetron in vacuum with a 20 nm-thick cobalt film. This resulted in 3D magnetic nanostructures with unusual spin configurations that potentially can be used in magnetic sensing technologies, memory, logic and biomedical applications [20]. Moreover, the single-spot nanolithography
  • authors acknowledge the support of the Russian Ministry of Education and Science under the state task 559 and Far Eastern Federal University. A.S. thanks Dr Maksim Stebliy for the magnetron sputtering of the magnetic film over PMMA patterns.
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Published 17 Apr 2015

Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

  • Jose Alberto Alvarado,
  • Arturo Maldonado,
  • Héctor Juarez,
  • Mauricio Pacio and
  • Rene Perez

Beilstein J. Nanotechnol. 2015, 6, 971–975, doi:10.3762/bjnano.6.100

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  • ], and RF magnetron sputtering [10]. However, the vacuum evaporation technique is used to deposit worm-form nanostructured thin films. This technique is different from those reported in the literature such as thermal evaporation assisted by inert gases [11], or e-beam evaporation [12]. So this technique
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Published 16 Apr 2015

Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

  • Valentin S. Teodorescu,
  • Cornel Ghica,
  • Adrian V. Maraloiu,
  • Mihai Vlaicu,
  • Andrei Kuncser,
  • Magdalena L. Ciurea,
  • Ionel Stavarache,
  • Ana M. Lepadatu,
  • Nicu D. Scarisoreanu,
  • Andreea Andrei,
  • Valentin Ion and
  • Maria Dinescu

Beilstein J. Nanotechnol. 2015, 6, 893–900, doi:10.3762/bjnano.6.92

Graphical Abstract
  • obtained by RF magnetron sputtering with 50:50 initial atomic ratio of Ge:TiO2. Laser irradiation was performed by using the fourth harmonic (266 nm) of a Nd:YAG laser. The laser-induced nanostructuring results in two effects, the first one is the appearance of a wave-like topography at the film surface
  • GeTiO matrix. Experimental Amorphous GeTiO films with a thickness of 330 nm were deposited by RF magnetron sputtering on Si(100) wafer substrates using Ge:TiO2 with 50:50 atomic ratio. Details on the film deposition are found in [23]. These GeTiO amorphous films were irradiated with laser fluences from
  • results from the RF magnetron sputtering films preparation. This shows that about 1/3 of the Ge content is lost from the surface layer affected by the laser radiation, and 2/3 of it can be segregated in amorphous Ge nanoparticles. Discussion The nanostructure formed at the GeTiO film surface by pulsed
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Published 07 Apr 2015

Manipulation of magnetic vortex parameters in disk-on-disk nanostructures with various geometry

  • Maxim E. Stebliy,
  • Alexander G. Kolesnikov,
  • Alexey V. Ognev,
  • Alexander S. Samardak and
  • Ludmila A. Chebotkevich

Beilstein J. Nanotechnol. 2015, 6, 697–703, doi:10.3762/bjnano.6.70

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  • diameters of 600 and 200 nm, respectively, were separated by a 3 nm thick Cu interlayer. The nanostructures were fabricated on naturally oxidized Si(111) substrates by means of electron-beam lithography, magnetron sputtering and standard lift-off process. Geometry and surface roughness were checked with
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Published 10 Mar 2015

Influence of size, shape and core–shell interface on surface plasmon resonance in Ag and Ag@MgO nanoparticle films deposited on Si/SiOx

  • Sergio D’Addato,
  • Daniele Pinotti,
  • Maria Chiara Spadaro,
  • Guido Paolicelli,
  • Vincenzo Grillo,
  • Sergio Valeri,
  • Luca Pasquali,
  • Luca Bergamini and
  • Stefano Corni

Beilstein J. Nanotechnol. 2015, 6, 404–413, doi:10.3762/bjnano.6.40

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  • detail [27][28]. The first chamber was equipped with a gas aggregation NP source, composed of a magnetron (NC200U, Oxford Applied Research) and a quadrupole mass filter (QMF). Ag NPs were deposited in vacuum or co-deposited with Mg atoms obtained by thermal evaporation in O2 atmosphere, with a similar
  • magnetron discharge power P ≈ 35 W, and Ar flow value between 40 sccm and 60 sccm. In these conditions we could obtain Ag NP with a linear size distribution between 3 and 10 nm, as measured by the QMF and directly verified by the SEM and TEM images. The size distribution of the deposited particles was
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Published 09 Feb 2015

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

  • Jacques Perrin Toinin,
  • Alain Portavoce,
  • Khalid Hoummada,
  • Michaël Texier,
  • Maxime Bertoglio,
  • Sandrine Bernardini,
  • Marco Abbarchi and
  • Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

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  • Discussion 340 nm thick Ge layers were deposited on the native oxide layer of a silicon substrate at room temperature (RT), under high vacuum, by magnetron sputtering. Recrystallization was then performed by rapid thermal annealing at 600 °C under vacuum (P ≈ 3 × 10−5 mbar) and the Ge layer was implanted
  • on the native silicon oxide of a (001) silicon wafer by magnetron sputtering in a commercial set up with a deposition chamber exhibiting a base pressure of ≈10−8 mbar. The first thermal annealing executed after Ge deposition was performed in a commercial Jetfirst 600 Rapid Thermal Annealing furnace
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Published 30 Jan 2015

Morphology, structural properties and reducibility of size-selected CeO2−x nanoparticle films

  • Maria Chiara Spadaro,
  • Sergio D’Addato,
  • Gabriele Gasperi,
  • Francesco Benedetti,
  • Paola Luches,
  • Vincenzo Grillo,
  • Giovanni Bertoni and
  • Sergio Valeri

Beilstein J. Nanotechnol. 2015, 6, 60–67, doi:10.3762/bjnano.6.7

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  • , Parco Area delle Scienze 37/A - 43124 Parma, Italy 10.3762/bjnano.6.7 Abstract Non-stoichiometric ceria nanoparticles (NPs) were obtained by a gas aggregation source with a magnetron and were mass-selected with a quadrupole mass filter. By varying magnetron power, Ar gas flow, and the length of the
  • : CeO2 ultra-thin films; ceria nanoparticles; magnetron sputtering; reduction and oxidation; size-dependent properties; size-selected nanoparticles; X-ray photoelectron spectroscopy; Introduction The main property of cerium oxide that attracts scientific attention is its ability to store and release
  • magnetron sputtering, the technique used in this study. Tschöpe et al. [12] studied ceria NPs realized by magnetron sputtering from pure and mixed metal target and inert gas condensation, observing the high non-stoichiometry of these systems due to the particular synthesis method. The non-stoichiometry is
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Published 07 Jan 2015

Si/Ge intermixing during Ge Stranski–Krastanov growth

  • Alain Portavoce,
  • Khalid Hoummada,
  • Antoine Ronda,
  • Dominique Mangelinck and
  • Isabelle Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2374–2382, doi:10.3762/bjnano.5.246

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  • grown (see the sketch of the sample structure in Figure 2). The entire growth was performed without interruption. Sample preparation for APT was performed using a Helios NanoLab DualBeam Ga+ FIB from FEI. A 100 nm thick Ni film was deposited by magnetron sputtering on each sample for protection before
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Published 09 Dec 2014

Silicon and germanium nanocrystals: properties and characterization

  • Ivana Capan,
  • Alexandra Carvalho and
  • José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

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  • Growth and characterization Much of current research on Si/Ge NCs is focused on the preparation and characterization of NCs embedded in a SiO2 matrix. In this paper, we have restricted our analysis to growth techniques, such as magnetron co-sputtering and ion implantation. With these techniques, it is
  • MBE. From the experimental point of view, the synthesis of free-standing NCs will not be covered within this review. However, those issues are visited in Section III of this paper, which deals with the first principles modelling of the NCs. II.1 Magnetron co-sputtering This is basically a technique
  • significantly decreases the thermal budget, when compared to other growth techniques. Moreover, it implies that PLD should be considered as an excellent alternative to the widely used magnetron co-sputtering technique for the deposition of complex oxide thin films and NCs. II.2 Ion implantation An ion beam
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Published 16 Oct 2014

Formation of CuxAu1−x phases by cold homogenization of Au/Cu nanocrystalline thin films

  • Alona Tynkova,
  • Gabor L. Katona,
  • Gabor A. Langer,
  • Sergey I. Sidorenko,
  • Svetlana M. Voloshko and
  • Dezso L. Beke

Beilstein J. Nanotechnol. 2014, 5, 1491–1500, doi:10.3762/bjnano.5.162

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  • AuxCu1.5x solid solutions. Figure 9 shows bright field (top view) TEM images and selected area electron diffraction patterns of as deposited and heat treated (for 1 h at 160 °C) Au(10nm)/Cu(15nm) bilayers, respectively. For TEM investigations the specimens were prepared by subsequent magnetron sputtering on
  • larger in Au (of the order of 10−11 m/s) than in Cu (of the order of 10−13 m/s). Experimental Au/Cu nanocrystalline thin films were prepared by DC magnetron sputtering onto (001)-oriented Si wafers with native SiO2 layer. The following bilayer samples were deposited: Au(25nm)/Cu(50nm), Au(25nm)/Cu(25nm
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Published 10 Sep 2014

Microstructural and plasmonic modifications in Ag–TiO2 and Au–TiO2 nanocomposites through ion beam irradiation

  • Venkata Sai Kiran Chakravadhanula,
  • Yogendra Kumar Mishra,
  • Venkata Girish Kotnur,
  • Devesh Kumar Avasthi,
  • Thomas Strunskus,
  • Vladimir Zaporotchenko,
  • Dietmar Fink,
  • Lorenz Kienle and
  • Franz Faupel

Beilstein J. Nanotechnol. 2014, 5, 1419–1431, doi:10.3762/bjnano.5.154

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  • terms of growth in size of nanoparticles as well structural transformations in the host TiO2 matrix. Experimental Ag–TiO2 and Au–TiO2 nanocomposite thin films were prepared by co-sputtering from two different magnetron sources in a home-made vacuum deposition chamber. The host matrix (TiO2) and metal
  • (Ag/Au) targets were co-sputtered by using two different magnetron sources, i.e., RF and DC, respectively, in the chamber. The deposition chamber was evacuated to a base pressure of 10−7 mbar with the help of a rotary pump (for pre-vacuum) followed by turbo molecular pump (for high vacuum). Metal was
  • deposited by the DC planar magnetron source ION’X 2UHV (Thin Film Consulting). A similar-type RF magnetron source was used for sputtering the copper-bonded titanium dioxide (Williams Advanced Materials) to prevent charging of the target. The deposition rates from both targets were in situ monitored by two
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Published 01 Sep 2014
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