The role of electron-stimulated desorption in focused electron beam induced deposition

• Willem F. van Dorp,
• Thomas W. Hansen,
• Jakob B. Wagner and
• Jeff T. M. De Hosson

Beilstein J. Nanotechnol. 2013, 4, 474–480, doi:10.3762/bjnano.4.56

• , Denmark 10.3762/bjnano.4.56 Abstract We present the results of our study about the deposition rate of focused electron beam induced processing (FEBIP) as a function of the substrate temperature with the substrate being an electron-transparent amorphous carbon membrane. When W(CO)6 is used as a precursor

• , since (amongst others) it determines the residence time of the precursor molecules on the surface, which in turn affects the growth rate. The activation energy for desorption can be determined from FEBIP experiments by measuring the deposition rate as a function of substrate temperature and constructing

• forces for FEBIP, the amount of desorption from the surface may be significant during electron irradiation. We determined the growth rate for W(CO)6 as a function of substrate temperature and compare the extracted energies Edes with values found in the literature. Results and Discussion Arrays of dots

Ni nanocrystals on HOPG(0001): A scanning tunnelling microscope study

• Michael Marz,
• Keisuke Sagisaka and
• Daisuke Fujita

Beilstein J. Nanotechnol. 2013, 4, 406–417, doi:10.3762/bjnano.4.48

• substrate temperature was estimated to be lower than 200 K.), but we confirm that any influence of the substrate warmup on the clusters was not detected within the deposition times used in this study, cf. section “Influence of annealing on the clusters”. A subsequent annealing process was performed in

• substrate temperature (for temperatures estimated to be between 100 K and 200 K), deposition time and rate. After the annealing process, the coverage of the surface is reduced with increasing annealing temperature. Mild annealing slightly above room temperature already results in a change of the cluster

Grating-assisted coupling to nanophotonic circuits in microcrystalline diamond thin films

• Patrik Rath,
• Svetlana Khasminskaya,
• Christoph Nebel,
• Christoph Wild and
• Wolfram H.P. Pernice

Beilstein J. Nanotechnol. 2013, 4, 300–305, doi:10.3762/bjnano.4.33

• % hydrogen at a base pressure of 80 mbar and a substrate temperature of 850 °C. Substrate rotation is applied to avoid angular nonuniformities arising from the gas flow. Growth rates are typically in the range of 1–2 µm/h. The diamond film thickness is controlled by timed growth combined with in situ

Focused electron beam induced deposition: A perspective

• Michael Huth,
• Fabrizio Porrati,
• Christian Schwalb,
• Marcel Winhold,
• Roland Sachser,
• Maja Dukic,
• Jonathan Adams and
• Georg Fantner

Beilstein J. Nanotechnol. 2012, 3, 597–619, doi:10.3762/bjnano.3.70

• FEBID process. Precursor chemistry: Suitable precursors for the FEBID process, which mostly takes place with the precursor and substrate temperature close to room temperature, need to have sufficiently high vapor pressures in the temperature range of about 270 K to 320 K. A typical vapor pressure would

Dipole-driven self-organization of zwitterionic molecules on alkali halide surfaces

• Laurent Nony,
• Franck Bocquet,
• Franck Para,
• Frédéric Chérioux,
• Eric Duverger,
• Frank Palmino,
• Vincent Luzet and
• Christian Loppacher

Beilstein J. Nanotechnol. 2012, 3, 285–293, doi:10.3762/bjnano.3.32

• (see below in Table 1). In other heteroepitaxial systems it was often observed that the orientation of an incompressible overlayer depended not only on the parameters during the sample preparation (substrate temperature, evaporation rate), but also on the lattice mismatch between the two structures [9

Junction formation of Cu₃BiS₃ investigated by Kelvin probe force microscopy and surface photovoltage measurements

• Fredy Mesa,
• William Chamorro,
• William Vallejo,
• Robert Baier,
• Thomas Dittrich,
• Alexander Grimm,
• Martha C. Lux-Steiner and
• Sascha Sadewasser

Beilstein J. Nanotechnol. 2012, 3, 277–284, doi:10.3762/bjnano.3.31

• simultaneous evaporation of Bi and S. In the second stage the Cu3BiS3 compound is formed by evaporation of Cu, in a sulfur environment, onto the BixSy layer, with the substrate temperature kept at 300 °C during the complete process [6]. Layers of Cu3BiS3 (thickness about 1 µm) were deposited on glass coated

Molecular-resolution imaging of pentacene on KCl(001)

• Julia L. Neff,
• Jan Götzen,
• Enhui Li,
• Michael Marz and
• Regina Hoffmann-Vogel

Beilstein J. Nanotechnol. 2012, 3, 186–191, doi:10.3762/bjnano.3.20

• crystalline layers on alkali halides [30][32][33][34]. Additionally, pentacene films of approximately 30 nm as well as 100 nm thickness have been found to grow epitaxially on KCl(001) in ambient-pressure SFM and diffraction studies [32][33]. Depending on the substrate temperature during deposition the

• pentacene films consist of varying fractions of bulk and thin-film phases, in which for higher substrate temperature the bulk-phase fraction dominates [33]. While the bulk phase shows an interlayer distance of 14.1 Å [28][29], the interlayer distance of the thin-film phase on KCl(001) is increased to 15.4 Å

Generation and agglomeration behaviour of size-selected sub-nm iron clusters as catalysts for the growth of carbon nanotubes

• Ravi Joshi,
• Benjamin Waldschmidt,
• Jörg Engstler,
• Rolf Schäfer and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2011, 2, 734–739, doi:10.3762/bjnano.2.80

• . Nevertheless with the volume of the unit cell of 23.5 Å3 and the surface energy of 2.4 J/m2 for α-iron [16], a mean diameter of 3.0 nm with a standard deviation of 1.7 nm was obtained for a substrate temperature of 750 °C, which is in good agreement with the nanoparticle diameter as observed experimentally by

Nanoscaled alloy formation from self-assembled elemental Co nanoparticles on top of Pt films

• Luyang Han,
• Ulf Wiedwald,
• Johannes Biskupek,
• Kai Fauth,
• Ute Kaiser and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 473–485, doi:10.3762/bjnano.2.51

• obtained with elevated substrate temperature TS during deposition. At TS = 600 °C epitaxial growth was obtained on MgO(100) or STO(100) substrates [18][19][20], whereas deposition at ambient temperature led to textured growth of Pt films. Pulsed laser deposition (PLD) produced a similar result for the Pt

Recrystallization of tubules from natural lotus (Nelumbo nucifera) wax on a Au(111) surface

• Sujit Kumar Dora and
• Klaus Wandelt

Beilstein J. Nanotechnol. 2011, 2, 261–267, doi:10.3762/bjnano.2.30

• exclude solvent influence) they found that at 50 °C (substrate temperature) tubule growth on HOPG occurs rapidly, whereas at 25 °C no tubule was formed on the surface. They also demonstrated that tubules can only be formed from the S-enantiomer of nonacosan-10-ol with the addition of a certain amount of

Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy

• Thomas König,
• Georg H. Simon,
• Lars Heinke,
• Leonid Lichtenstein and
• Markus Heyde

Beilstein J. Nanotechnol. 2011, 2, 1–14, doi:10.3762/bjnano.2.1

• acceleration voltage of 800 V for 15 min. Afterwards, the Ag(001) was annealed at 690 K for 30 min. The sputtering and annealing cycle was repeated several times. Mg was evaporated from a Knudsen cell in an oxygen atmosphere of 1 × 10−4 Pa at a substrate temperature of 560 K and a deposition rate of about 1 ML

Flash laser annealing for controlling size and shape of magnetic alloy nanoparticles

• Damien Alloyeau,
• Christian Ricolleau,
• Cyril Langlois,
• Yann Le Bouar and
• Annick Loiseau

Beilstein J. Nanotechnol. 2010, 1, 55–59, doi:10.3762/bjnano.1.7

• -grown NPs can be controlled with the substrate temperature [21][22]. Two samples with a nominal thickness of 2.5 nm were prepared, with a substrate temperature of 550 °C and 650 °C, leading to the formation of a disordered face centered cubic (FCC) and L10 ordered structures, respectively. On both

Preparation and characterization of supported magnetic nanoparticles prepared by reverse micelles

• Ulf Wiedwald,
• Luyang Han,
• Johannes Biskupek,
• Ute Kaiser and
• Paul Ziemann

Beilstein J. Nanotechnol. 2010, 1, 24–47, doi:10.3762/bjnano.1.5

• via a load lock system within the plasma chamber, an oxygen rf-plasma is ignited (frequency 13.56 MHz, operating pressure 4·10–2 mbar, power 50 W resulting in a dc self-bias of –500 V with the sample holder grounded). Simultaneously, a sample heater is started bringing the substrate temperature up to