Sequence-dependent electrical response of ssDNA-decorated carbon nanotube, field-effect transistors to dopamine

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2113–2121, doi:10.3762/bjnano.5.220

• GA > GT > AC > CT, for homo- and repeated-base sequences, respectively. The different response of various SWCNT–ssDNA systems to DA underlines the sequence selectivity, whereas the detection of DA in the presence of UA highlights the molecular selectivity of the ssDNA-decorated devices. Keywords

• , respectively. ssDNA immobilization SWCNTs from a single CVD growth run were used to avoid device variability. Eight ssDNA sequences (G22, A22, C22, T22, (GT)22, (GA)22, (AC)22, and (CT)22) of the same sequence length, dopamine 3-hydroxytyramine, and uric acid were purchased from Sigma-Aldrich, Singapore

• surface, and results in a non-reliable and non-reproducible charge transfer between DA/UA and the SWCNT. Figure 3b shows the transfer curves of a SWCNT FET decorated with (GA)22 sequence tested with DA, UA, and DA–UA solution mixtures. Upon exposure to DA, the (GA)22-decorated device displayed a reduction

PVP-coated, negatively charged silver nanoparticles: A multi-center study of their physicochemical characteristics, cell culture and in vivo experiments

• Sebastian Ahlberg,
• Alexandra Antonopulos,
• Jörg Diendorf,
• Ralf Dringen,
• Matthias Epple,
• Rebekka Flöck,
• Wolfgang Goedecke,
• Christina Graf,
• Nadine Haberl,
• Jens Helmlinger,
• Fabian Herzog,
• Frederike Heuer,
• Stephanie Hirn,
• Christian Johannes,
• Stefanie Kittler,
• Manfred Köller,
• Katrin Korn,
• Wolfgang G. Kreyling,
• Fritz Krombach,
• Jürgen Lademann,
• Kateryna Loza,
• Eva M. Luther,
• Marcelina Malissek,
• Martina C. Meinke,
• Daniel Nordmeyer,
• Anne Pailliart,
• Jörg Raabe,
• Fiorenza Rancan,
• Barbara Rothen-Rutishauser,
• Eckart Rühl,
• Carsten Schleh,
• Andreas Seibel,
• Christina Sengstock,
• Lennart Treuel,
• Annika Vogt,
• Katrin Weber and
• Reinhard Zellner

Beilstein J. Nanotechnol. 2014, 5, 1944–1965, doi:10.3762/bjnano.5.205

• microscopy (Figure 7) silver agglomerates were found in the monocytes (Figure 8C) but not in the lymphocytes (Figures 8B). As previously with hMSC, the presence of silver in the monocyte was proved by EDX (Figure 8D). The other elements C, O, W, Au and Ga are due to organic material or due to the sputtering

Silicon and germanium nanocrystals: properties and characterization

• Ivana Capan,
• Alexandra Carvalho and
• José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

• surface groups was found to increase the electron binding energy of P, As and Sb, and to decrease the hole binding energy of B, Al, Ga and In [67]. Chlorine-covered Si NCs were found to have higher electron affinity, higher ionization energy and a lower optical absorption energy threshold than hydrogen

Numerical investigation of the effect of substrate surface roughness on the performance of zigzag graphene nanoribbon field effect transistors symmetrically doped with BN

• Majid Sanaeepur,
• Arash Yazdanpanah Goharrizi and
• Mohammad Javad Sharifi

Beilstein J. Nanotechnol. 2014, 5, 1569–1574, doi:10.3762/bjnano.5.168

• -infinite source and drain ideal leads. The self-energy matrices are calculated through a highly convergent recursive method [41]. The transmission as a function of energy is obtained through the Landauer formula [42]: in which Ga(E) = [Gr(E)]† is the advanced Green's function and Γi (i = S,D) represents

Probing the electronic transport on the reconstructed Au/Ge(001) surface

• Franciszek Krok,
• Mark R. Kaspers,
• Alexander M. Bernhart,
• Marek Nikiel,
• Benedykt R. Jany,
• Paulina Indyka,
• Mateusz Wojtaszek,
• Rolf Möller and
• Christian A. Bobisch

Beilstein J. Nanotechnol. 2014, 5, 1463–1471, doi:10.3762/bjnano.5.159

• source software GSxM [17] and data processing was done by using WxSM [18]. For the transmission electron microscope (TEM) measurements lamellas of the Au/Ge(001) of the very same sample were prepared with the use of an FEI Quanta 3D FEG scanning electron microscope equipped with a 30 keV Ga+ focused ion

Observation and analysis of structural changes in fused silica by continuous irradiation with femtosecond laser light having an energy density below the laser-induced damage threshold

• Wataru Nomura,
• Tadashi Kawazoe,
• Takashi Yatsui,
• Makoto Naruse and
• Motoichi Ohtsu

Beilstein J. Nanotechnol. 2014, 5, 1334–1340, doi:10.3762/bjnano.5.146

• approximation g(F) = Plog(F) − Q. The approximation curves are shown by the green and blue dotted lines in Figure 1b, where gA(F) was defined over the range 6.3 × 103 J/cm2 < F < 1.2 × 104 J/cm2 for ΔSA, and gB (F) was defined over the range F > 9.2 × 103 J/cm2 for ΔSB. The constants P and Q are as shown in

• Table 1. When Ft at which gA(F) = 0 and gB(F) = 0 is determined from these equations, for the samples A and B, we calculated FtA = 6.3 × 103 J/cm2 (1.1 × 106 shots) and FtB = 9.2 × 103 J/cm2 (1.5 × 106 shots), under the laser energy density of 6.0 mJ/cm2. This result shows that the degradation starting

• indentations or protrusions. Also, the constants P which define the rate of increase of gA(F) and gB(F) are PA = 0.062 and PB = 0.016, differing by a factor of 3.9, which shows that laser-induced degradation originating from the surface structure proceeds more rapidly. 1.2 In situ evaluation of spectral change

Direct nanoscale observations of the coupled dissolution of calcite and dolomite and the precipitation of gypsum

• Francesco G. Offeddu,
• Jordi Cama,
• Josep M. Soler and
• Christine V. Putnis

Beilstein J. Nanotechnol. 2014, 5, 1245–1253, doi:10.3762/bjnano.5.138

• CGL2010-20984-C02-01 from the Spanish Government and the EU initial training network Delta-Min (Mechanisms of mineral replacement reactions, Grant PITN-GA-2008-215360). FGO was supported by a JAE-Predoc grant under the Program “Junta para la Ampliación de Estudios”. We would like to thank Veronika

An insight into the mechanism of charge-transfer of hybrid polymer:ternary/quaternary chalcopyrite colloidal nanocrystals

• Parul Chawla,
• Son Singh and
• Shailesh Narain Sharma

Beilstein J. Nanotechnol. 2014, 5, 1235–1244, doi:10.3762/bjnano.5.137

• the sphalerite resulting in a tetragonal unit cell as shown in Figure 1a. CIGSe exhibits a tetragonal chalcopyrite space lattice with space group I42d as shown in Figure 1b. Its lattice structure is almost similar to the cubic lattice structure where each Cu atom, In or Ga atom is bonded to four Se

• atoms in a tetrahedral fashion and, in turn, the Se atom is tetrahedrally coordinated to two Cu atoms and two In and Ga atoms. This tetrahedral coordination refers to the covalent bonding between group I, III and VI elements, which results in a sp3 hybridization. However, along with the covalent nature

• in bonding an ionic bonding character is present [13]. Therefore, the group-I and group-III metals, i.e., Cu, In and Ga, are frequently denoted as cations, whereas the group-VI Se atoms are denoted as anions in the context of explaining the detailed crystal structure of these chalcopyrites. CZTSe

Nanodiamond-DGEA peptide conjugates for enhanced delivery of doxorubicin to prostate cancer

• Amanee D Salaam,
• Patrick Hwang,
• Roberus McIntosh,
• Hadiyah N Green,
• Ho-Wook Jun and
• Derrick Dean

Beilstein J. Nanotechnol. 2014, 5, 937–945, doi:10.3762/bjnano.5.107

• ., Atlanta, GA) and 1% penicillin/streptomycin/anphotericin (Fisher Scientific, Hampton, NH) at 37 °C and 5% CO2 in a humidified incubator. The cell lines were cultured in T75 flasks until confluent before use in experiments. All hMSCs and PC3 cells were seeded in 48 well plates and allowed to attach

Scale effects of nanomechanical properties and deformation behavior of Au nanoparticle and thin film using depth sensing nanoindentation

• Dave Maharaj and
• Bharat Bhushan

Beilstein J. Nanotechnol. 2014, 5, 822–836, doi:10.3762/bjnano.5.94

• milling (Nova NanoLab 600, FEI, Hillsboro, OR) by using a Ga+ ion beam accelerated at a voltage of 30 kV with currents ranging from 0.03 to 28 nA. A Pt coating was deposited on both sets of samples to protect the surfaces during milling. The cross-sections were then lifted out by using a micro manipulator

Encapsulation of nanoparticles into single-crystal ZnO nanorods and microrods

• Jinzhang Liu,
• Marco Notarianni,
• Llew Rintoul and
• Nunzio Motta

Beilstein J. Nanotechnol. 2014, 5, 485–493, doi:10.3762/bjnano.5.56

• . Acknowledgements We thank the QUT Vice-Chancellor’s Research Fellowship and financial support of the ARC through the Discovery project DP130102120, and of the Marie Curie International Research Staff Exchange Scheme Fellowship (PIRSES-GA-2011-295216) within the 7th European Community Framework Programme. Y. Wei is

One-step synthesis of high quality kesterite Cu₂ZnSnS₄ nanocrystals – a hydrothermal approach

• Vincent Tiing Tiong,
• John Bell and
• Hongxia Wang

Beilstein J. Nanotechnol. 2014, 5, 438–446, doi:10.3762/bjnano.5.51

• to overcome the key issues in the current PV technologies: the high production cost of silicon wafer used in the first generation solar cells and the limited availability of raw materials such as tellurium and indium used in CdTe and Cu(Ga, In)Se2 (CIGS) based thin film solar cells, which has raised

Fabrication of carbon nanomembranes by helium ion beam lithography

• Xianghui Zhang,
• Henning Vieker,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2014, 5, 188–194, doi:10.3762/bjnano.5.20

• formed is still missing. Further modification and patterning of SAMs have been achieved by using ion irradiation (e.g. Ar+, Ga+, Si+, etc.), which leads to the desorption and the fragmentation of molecules [14][15]. High energy helium ions passing through polymer films modify the macroscopic properties

Synthesis of embedded Au nanostructures by ion irradiation: influence of ion induced viscous flow and sputtering

• Udai B. Singh,
• D. C. Agarwal,
• S. A. Khan,
• S. Mohapatra,
• H. Amekura,
• D. P. Datta,
• Ajay Kumar,
• R. K. Choudhury,
• T. K. Chan,
• Thomas Osipowicz and
• D. K. Avasthi

Beilstein J. Nanotechnol. 2014, 5, 105–110, doi:10.3762/bjnano.5.10

• ) measurements were performed on pristine and irradiated samples by using a 200 kV field emission TEM (JEM 2100F from JEOL) at TEM station, NIMS, Japan. XTEM samples are prepared by the focused ion beam (FIB) method by using a 30 keV Ga beam in a JEOL JEM 9320 FIB. Results and Discussions The XTEM image of

• pristine sample is shown in Figure 1. The image shows that the pristine film was discontinuous with irregularly shaped nanostructures. The glass and Au interface is shown by the dashed line. In this image traces of a few Ga NPs are observed, which originate from Ga that was incorporated during the

In situ growth optimization in focused electron-beam induced deposition

• Paul M. Weirich,
• Marcel Winhold,
• Christian H. Schwalb and
• Michael Huth

Beilstein J. Nanotechnol. 2013, 4, 919–926, doi:10.3762/bjnano.4.103

• changing the deposition parameters. Here, we present a first implementation of such a feedback control mechanism and employ an evolutionary genetic algorithm (GA) for the in situ optimization of the electrical conductivity of nanostructures that are prepared by FEBID [17]. By using the time gradient of the

• measured in situ conductance as a fitness parameter for the GA we are able to tune the properties of the deposits towards highest conductivity. In order to demonstrate the efficiency of this method, we chose W(CO)6. Our study reveals that an increase of conductivity by one order of magnitude can be

• achieved with the GA by solely varying the process parameters pitch p and dwell-time tD in the deposition process. The precursor-specific limitations of the approach are also exemplified for another precursor, MeCpPt(Me)3, which is known to show only one bond-cleavage in the initial step [18]. This results

Challenges in realizing ultraflat materials surfaces

• Takashi Yatsui,
• Wataru Nomura,
• Fabrice Stehlin,
• Olivier Soppera,
• Makoto Naruse and
• Motoichi Ohtsu

Beilstein J. Nanotechnol. 2013, 4, 875–885, doi:10.3762/bjnano.4.99

• of 0.140 nm obtained for GaN might be limited by the value of the interatomic distance between Ga and N of 0.195 nm for hexagonal GaN [40]. Furthermore, R(l) again shows the individual contributions of the surface roughness at different length scales to the overall surface roughness, as shown in

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

• Cathy Bugot,
• Nathanaëlle Schneider,
• Daniel Lincot and
• Frédérique Donsanti

Beilstein J. Nanotechnol. 2013, 4, 750–757, doi:10.3762/bjnano.4.85

• tuned. Keywords: atomic layer deposition; buffer layer; indium oxi-sulfide; plasma enhancement; thin film solar cells; Introduction Chalcopyrite-type thin film solar cells that are based on a Cu(In,Ga)Se2 (CIGS) absorber have reached high efficiencies, up to 20.3% [1] in 2011 and 20.4% [2] on flexible

• during the O2 plasma pulses. Due to the reactivity of the plasma, the film surfaces cannot be considered as a static system but should rather be seen as continually re-structured surfaces. In our future studies, those films will be applied as buffer layer in Cu(In,Ga)Se2 solar cells to investigate their

Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition

• Adib Abou Chaaya,
• Roman Viter,
• Mikhael Bechelany,
• Zanda Alute,
• Donats Erts,
• Anastasiya Zalesskaya,
• Kristaps Kovalevskis,
• Vincent Rouessac,
• Valentyn Smyntyna and
• Philippe Miele

Beilstein J. Nanotechnol. 2013, 4, 690–698, doi:10.3762/bjnano.4.78

• Information Supporting Information File 38: Additional figures. Acknowledgements The study was partially supported by the EU grant under BIOSENSORS-AGRICULT, Contract PIRSES-GA-2012-318520 “DEVELOPMENT OF NANOTECHNOLOGY BASED BIOSENSORS FOR AGRICULTURE”. The authors are thankful to Dr. Janis Abolins for

A nano-graphite cold cathode for an energy-efficient cathodoluminescent light source

• Alexander N. Obraztsov,
• Victor I. Kleshch and
• Elena A. Smolnikova

Beilstein J. Nanotechnol. 2013, 4, 493–500, doi:10.3762/bjnano.4.58

• (Grant PIRSES-GA-2011-295241).

Structural and thermoelectric properties of TMGa₃ (TM = Fe, Co) thin films

• Sebastian Schnurr,
• Ulf Wiedwald,
• Paul Ziemann,
• Valeriy Y. Verchenko and
• Andrei V. Shevelkov

Beilstein J. Nanotechnol. 2013, 4, 461–466, doi:10.3762/bjnano.4.54

• 43 nm. Backscattering energies of Co, Ga and Si at the sample surface are indicated by vertical marks. The displacement of the Si edge of the substrate toward lower backscattering energies is caused by the film thickness. Electrical resistivity of FeGa3, CoGa3 and Fe0.75Co0.25Ga3 films as a function

Magnetic anisotropy of graphene quantum dots decorated with a ruthenium adatom

• Igor Beljakov,
• Velimir Meded,
• Franz Symalla,
• Karin Fink,
• Sam Shallcross and
• Wolfgang Wenzel

Beilstein J. Nanotechnol. 2013, 4, 441–445, doi:10.3762/bjnano.4.51

• 100 Å away from the flake plane. Acknowledgements We acknowledge financial support from EC FP7 e-infrastructures project MMM@HPC (GA 261594). KF thanks for support by the DFG-funded Transregional Collaborative Research Center SFB/TRR 88 “3 MET”. SS acknowledges the financial support of the

Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor

• Wolfgang Molnar,
• Alois Lugstein,
• Tomasz Wojcik,
• Peter Pongratz,
• Norbert Auner,
• Christian Bauch and
• Emmerich Bertagnolli

Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65

• adding HCl to the growth atmosphere [18]. For such VLS grown NW dopants can be introduced either through particular catalyst particles, such as In [19], Al [20] or Ga [21], which become partly incorporated into the NW during growth and thus work as p-type dopants themselves, or by adding a small amount

FTIR nanobiosensors for Escherichia coli detection

• Stefania Mura,
• Gianfranco Greppi,
• Maria Laura Marongiu,
• Pier Paolo Roggero,
• Sandeep P. Ravindranath,
• Lisa J. Mauer,
• Nicoletta Schibeci,
• Francesco Perria,
• Massimo Piccinini,
• Plinio Innocenzi and
• Joseph Irudayaraj

Beilstein J. Nanotechnol. 2012, 3, 485–492, doi:10.3762/bjnano.3.55

• necessary to improve the safety of our food supply chain. In this work we report on mesoporous titania thin-film substrates as sensors to detect E. coli O157:H7. Titania films treated with APTES ((3-aminopropyl)triethoxysilane) and GA (glutaraldehyde) were functionalized with specific antibodies and the

• %), glutaraldehyde (GA Grade I, 50% in H2O, specially purified for use as an electron microscopy fixative or other sophisticated use) were purchased from Sigma Aldrich (Germany). E. coli O157:H7 and E. coli K12 were obtained from the bacteria collection at Purdue University (Agricultural and Biological Engineering

• dried in air. The following functionalization of TiO2–APTES films with GA was obtained by immersing the films in GA 50% (v/v) in water for 24 h, washing with water and EtOH and drying at room temperature. Different experiments were realized, providing the immobilization of antibodies directly on titania

Junction formation of Cu₃BiS₃ investigated by Kelvin probe force microscopy and surface photovoltage measurements

• Fredy Mesa,
• William Chamorro,
• William Vallejo,
• Robert Baier,
• Thomas Dittrich,
• Alexander Grimm,
• Martha C. Lux-Steiner and
• Sascha Sadewasser

Beilstein J. Nanotechnol. 2012, 3, 277–284, doi:10.3762/bjnano.3.31

• charge-selective contact has to be increased. Keywords: buffer layer; Cu3BiS3; Kelvin probe force microscopy; solar cells; Introduction Thin-film solar cells based on absorbers made from Cu(In,Ga)Se2 [1] or CdTe [2] reach the highest efficiencies currently available. Both semiconductors are interesting

• photovoltaic active interface with a SPV of ~130 mV [7]. It is well known from the Cu(In,Ga)Se2 solar cells that a buffer layer is required between the n-ZnO window and the p-type absorber layer to reach high efficiency values [8]. Traditionally, CdS deposited by chemical bath deposition (CBD) has been used as

• , such as chemical bath deposition, atomic layer deposition, ion layer gas reaction (ILGAR) deposition, evaporation, and spray deposition [9]. One interesting aspect of the above mentioned solar cell materials CdTe and Cu(In,Ga)Se2 is their high efficiency despite the abundance of grain boundaries (GBs

Current-induced forces in mesoscopic systems: A scattering-matrix approach

• Niels Bode,
• Silvia Viola Kusminskiy,
• Reinhold Egger and
• Felix von Oppen

Beilstein J. Nanotechnol. 2012, 3, 144–162, doi:10.3762/bjnano.3.15

• order in , with G< = GR∑<GA. Current-induced forces in terms of Green’s functions We can now collect the results from the previous section and identify the current-induced forces appearing in the Langevin Equation 1. Except for the stochastic noise force, the current-induced forces are encoded in . In

• explicitly and using Equation 88 in Supporting Information File 1, Section A, we can express G< in terms of GR and GA and obtain where the second equality exploits the cyclic invariance of the trace. Noting that, by Equation 93 in Supporting Information File 1, Section A, Equation 37 can be expressed