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Search for "Ga" in Full Text gives 152 result(s) in Beilstein Journal of Nanotechnology.

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

  • Thomas H. Loeber,
  • Dirk Hoffmann and
  • Henning Fouckhardt

Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39

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  • –Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 °C, not commonly used by other research groups. These parameters enabled
  • (SK) growth, depending on the precise control of the Sb/Ga V/III flux ratio, coverage, and growth temperature. Furthermore these parameters influence dot shape, size and density. The staggered (type-II) band alignment with a large valence band offset provides hole confinement. The electronic states
  • lie in the GaAs conduction band continuum [1][2]. Bimberg et al. grew GaSb on GaAs with variable GaSb layer thickness [2][3][4][5]. Huffaker et al. achieved QDs by variation of the Sb/Ga flux ratio (V/III ratio) between 1.00/1 and 6.50/1 with a maximum dot density around 2.9 × 1010 cm−2 [1][6][7][8][9
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Published 30 Jun 2011

On the reticular construction concept of covalent organic frameworks

  • Binit Lukose,
  • Agnieszka Kuc,
  • Johannes Frenzel and
  • Thomas Heine

Beilstein J. Nanotechnol. 2010, 1, 60–70, doi:10.3762/bjnano.1.8

Graphical Abstract
  • calculated COF parameters. Supporting Information File 4: CIFs for selected structures. Acknowledgements Financial support by the European Union through the collaborative project FP7-NMP-2008-EU-India-2 GA 233482 and the German Research Council (DFG) is gratefully acknowledged.
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Published 22 Nov 2010
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