Beilstein J. Nanotechnol.2011,2, 333–338, doi:10.3762/bjnano.2.39
–Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 °C, not commonly used by other research groups. These parameters enabled
(SK) growth, depending on the precise control of the Sb/Ga V/III flux ratio, coverage, and growth temperature. Furthermore these parameters influence dot shape, size and density. The staggered (type-II) band alignment with a large valence band offset provides hole confinement. The electronic states
lie in the GaAs conduction band continuum [1][2]. Bimberg et al. grew GaSb on GaAs with variable GaSb layer thickness [2][3][4][5]. Huffaker et al. achieved QDs by variation of the Sb/Ga flux ratio (V/III ratio) between 1.00/1 and 6.50/1 with a maximum dot density around 2.9 × 1010 cm−2 [1][6][7][8][9
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Figure 1:
Top: AFM images of samples grown at a temperature of T = 527 °C and a nominal coverage of 3 ML, but...
Beilstein J. Nanotechnol.2010,1, 60–70, doi:10.3762/bjnano.1.8
calculated COF parameters.
Supporting Information File 4: CIFs for selected structures.
Acknowledgements
Financial support by the European Union through the collaborative project FP7-NMP-2008-EU-India-2 GA 233482 and the German Research Council (DFG) is gratefully acknowledged.
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Figure 1:
The connector (I–IV) and linker (a–e) units considered in this work. The same nomenclature is used ...