Transport characteristics of a silicene nanoribbon on Ag(110)

• Ryoichi Hiraoka,
• Chun-Liang Lin,
• Kotaro Nakamura,
• Ryo Nagao,
• Maki Kawai,
• Ryuichi Arafune and
• Noriaki Takagi

Beilstein J. Nanotechnol. 2017, 8, 1699–1704, doi:10.3762/bjnano.8.170

• Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 304-0044, Japan 10.3762/bjnano.8.170 Abstract We present the transport characteristics of individual silicene nanoribbons (SiNRs) grown on Ag(110). By lifting up a single SiNR with a low-temperature scanning tunneling microscope tip, a

• SiNR on Ag(110). To isolate SiNR from the Ag substrate, we lift up an individual SiNR with the tip of a low-temperature scanning tunneling microscope (STM) and fabricate a nanojunction in which the lifted SiNR bridges the gap between the STM tip and the substrate. This method enables us to isolate the

Adsorption and electronic properties of pentacene on thin dielectric decoupling layers

• Sebastian Koslowski,
• Daniel Rosenblatt,
• Alexander Kabakchiev,
• Klaus Kuhnke,
• Klaus Kern and
• Uta Schlickum

Beilstein J. Nanotechnol. 2017, 8, 1388–1395, doi:10.3762/bjnano.8.140

• . To understand the principles behind single-molecule devices, the fundamental physics of molecule-metal junctions need to be well understood and controlled. Scanning tunneling microscopy (STM) is particularly suited to not only study the structure of an adsorbed (organic) molecule on the atomic scale

• demonstrated by the observation of the unperturbed gas-phase-like frontier orbitals of pentacene on this substrate [3]. A weak interaction is nevertheless suggested by the observed shift of the orbital energies of the admolecule [4][7][8]. In scanning tunneling spectroscopy (STS) experiments on pentacene, two

• well-defined increases in the local density of states are observed close to the Fermi level [3][4]. Tunneling through these states of pentacene results in a temporary charging of the molecule prior to the dissipation of the charge into the substrate [5]. The peaks observed in STS on pentacene are

Deposition of exchange-coupled dinickel complexes on gold substrates utilizing ambidentate mercapto-carboxylato ligands

• Martin Börner,
• Laura Blömer,
• Marcus Kischel,
• Peter Richter,
• Georgeta Salvan,
• Dietrich R. T. Zahn,
• Pablo F. Siles,
• Maria E. N. Fuentes,
• Carlos C. B. Bufon,
• Daniel Grimm,
• Oliver G. Schmidt,
• Daniel Breite,
• Bernd Abel and
• Berthold Kersting

Beilstein J. Nanotechnol. 2017, 8, 1375–1387, doi:10.3762/bjnano.8.139

• photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) measurements [41]. The present study is an extension of this work and focuses on the synthesis, characterization and deposition of dinuclear [Ni2L(L’)](ClO4) complexes 6–8 bearing the ambidentate coligands H2L4–H2L6 (Figure 1, Scheme 2

Comprehensive Raman study of epitaxial silicene-related phases on Ag(111)

• Dmytro Solonenko,
• Ovidiu D. Gordan,
• Guy Le Lay,
• Dietrich R. T. Zahn and
• Patrick Vogt

Beilstein J. Nanotechnol. 2017, 8, 1357–1365, doi:10.3762/bjnano.8.137

• be determined for the silicon deposition onto the Ag(111) surface from room temperature (RT) up to 500 °C. Results Scanning tunneling microscopy Figure 1 shows the STM images for Si deposited onto Ag(111) at different substrate temperatures in agreement with previous reports [4][8]. For deposition of

Charge transport in organic nanocrystal diodes based on rolled-up robust nanomembrane contacts

• Vineeth Kumar Bandari,
• Lakshmi Varadharajan,
• Longqian Xu,
• Abdur Rehman Jalil,
• Mirunalini Devarajulu,
• Pablo F. Siles,
• Feng Zhu and
• Oliver G. Schmidt

Beilstein J. Nanotechnol. 2017, 8, 1277–1282, doi:10.3762/bjnano.8.129

• [17]. The transport in such diode is subject to tunneling and field emission mechanisms due to the ultra-thin smooth film, while in the present report the thermal activated transport via bulk nanostructures dominates the transport progress. Conclusion In summary, in this work we investigated the

Adsorption characteristics of Er₃N@C₈₀on W(110) and Au(111) studied via scanning tunneling microscopy and spectroscopy

• Sebastian Schimmel,
• Zhixiang Sun,
• Danny Baumann,
• Denis Krylov,
• Nataliya Samoylova,
• Alexey Popov,
• Bernd Büchner and
• Christian Hess

Beilstein J. Nanotechnol. 2017, 8, 1127–1134, doi:10.3762/bjnano.8.114

• , Germany Center for Transport and Devices, TU Dresden, 01069 Dresden, Germany 10.3762/bjnano.8.114 Abstract We performed a study on the fundamental adsorption characteristics of Er3N@C80 deposited on W(110) and Au(111) via room temperature scanning tunneling microscopy and spectroscopy. Adsorbed on W(110

• center [4]. Dependent on the cluster composition and due to the intercalation inside a protecting carbon cage, intriguing properties emerge. For instance, single molecular magnetism was observed for DySc2N@C80 [5] and conductance switching by tunneling current induced cluster rotations between chiral

• it. In order to examine the adsorption characteristics and the electronic structure of Er3N@C80 in consideration of adsorbate–substrate interaction, we performed scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) investigations on sub-monolayer covered W(110) and Au(111

Stable Au–C bonds to the substrate for fullerene-based nanostructures

• Taras Chutora,
• Jesús Redondo,
• Bruno de la Torre,
• Martin Švec,
• Pavel Jelínek and
• Héctor Vázquez

Beilstein J. Nanotechnol. 2017, 8, 1073–1079, doi:10.3762/bjnano.8.109

• tunneling microscope. These features are stable at room temperature against diffusion on the surface. We carry out DFT calculations of fullerene molecules having one missing carbon atom to simulate the vacancies in the molecules resulting from the sputtering process. These modified fullerenes have an

• vacancies. This provides a pathway for the formation of fullerene-based nanostructures on Au at room temperature. Keywords: Au–C bonds; density functional theory (DFT); fullerenes; scanning tunneling microscopy (STM); sputtering; Introduction In single-molecule electronics, the active element in an

• nanostructures on Au(111) at room temperature in ultra-high vacuum (UHV) environment. These structures were realized by soft sputtering of fullerene films on the surface with Ar+ ions and were studied using scanning tunneling microscopy (STM). After sputtering, bright spots on the herringbone corners are

3D Nanoprinting via laser-assisted electron beam induced deposition: growth kinetics, enhanced purity, and electrical resistivity

• Brett B. Lewis,
• Robert Winkler,
• Xiahan Sang,
• Pushpa R. Pudasaini,
• Michael G. Stanford,
• Harald Plank,
• Raymond R. Unocic,
• Jason D. Fowlkes and
• Philip D. Rack

Beilstein J. Nanotechnol. 2017, 8, 801–812, doi:10.3762/bjnano.8.83

• reports [61][71][72]. The nanogranular nature leads to intergranular tunneling and resistivities tunable over orders of magnitudes, all much higher than bulk platinum [73]. Figure 4a and Figure 4b show SEM images of nanobridges grown with and without laser assist, respectively, and Figure 4e is a plot of

Optimizing qPlus sensor assemblies for simultaneous scanning tunneling and noncontact atomic force microscopy operation based on finite element method analysis

• Omur E. Dagdeviren and
• Udo D. Schwarz

Beilstein J. Nanotechnol. 2017, 8, 657–666, doi:10.3762/bjnano.8.70

• enable the simultaneous collection of local forces and tunneling currents, the exact realization of this wire connection has a major effect on sensor properties such as spring constant, quality factor, resonance frequency, and its deviation from an ideal vertical oscillation. Keywords: force sensor

• ; noncontact atomic force microscopy; quartz tuning forks; scanning tunneling microscopy; self-sensing probe; Introduction Scanning tunneling microscopy (STM) [1] and non-contact atomic force microscopy (NC-AFM) [1][2][3] are powerful methods allowing the visualization of the atomic structure of a surface

• , with STM probing the electronic properties of the sample and NC-AFM its chemical nature with picoampere, piconewton, and picometer resolution [4][5][6][7][8][9][10][11]. Thereby, STM relies on measuring a tunneling current collected by a conducting tip located in close proximity of the probed surface

Analysis and modification of defective surface aggregates on PCDTBT:PCBM solar cell blends using combined Kelvin probe, conductive and bimodal atomic force microscopy

• Hanaul Noh,
• Alfredo J. Diaz and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2017, 8, 579–589, doi:10.3762/bjnano.8.62

• performance. In order to characterize the diode-like behavior under forward and reverse currents, we conducted three-dimensional finite element analysis (FEA) and charge tunneling calculations for the tip and bottom electrode system, as shown in Figure 5. The electric field distribution in AFM measurements

• and holes, respectively. The dominant charge carriers in C-AFM could be additionally optimized by choosing a more suitable tip coating material [31]. In addition to the qualitative energy-diagram analysis, we calculated the quantum tunneling transmission coefficient (T) of charge carriers through the

• coefficient, it is useful to analyze all the possible tunneling routes as shown in Figure 5e–h. Red and green curves in the figures represent the tip-side and bottom-side injection of charge carriers, respectively. One can confirm that bottom-side injection of charges is much smaller than tip-side injection

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

• Massimiliano Lucci,
• Ivano Ottaviani,
• Matteo Cirillo,
• Fabio De Matteis,
• Roberto Francini,
• Vittorio Merlo and
• Ivan Davoli

Beilstein J. Nanotechnol. 2017, 8, 539–546, doi:10.3762/bjnano.8.58

• investigate its mechanical and adhesion properties. The transport properties of NbN/AlN/NbN Josephson junctions obtained as a result of the above described fabrication process were measured in liquid helium at 4.2 K. Keywords: Josephson effect; superconductors; thin films; tunneling; Introduction Niobium

• growth of NbN/AlN/NbN tunnel junctions on oxidized silicon substrates can give rise to a non-optimal barrier formation. In order to check the influence of the substrate on trilayers we plan to test our trilayer process on MgO substrates, which are known, for providing the highest quality of the tunneling

• the superconductive films grown over “cold” amorphous silicon oxide. Improvements of this recipe could substantially enhance the ease of fabrication and lead to noticeable progress in the scientific and technical usefulness of all-NbN tunneling devices. Conclusion A viable method to optically monitor

Ordering of Zn-centered porphyrin and phthalocyanine on TiO₂(011): STM studies

• Piotr Olszowski,
• Lukasz Zajac,
• Szymon Godlewski,
• Bartosz Such,
• Rémy Pawlak,
• Antoine Hinaut,
• Res Jöhr,
• Thilo Glatzel,
• Ernst Meyer and
• Marek Szymonski

Beilstein J. Nanotechnol. 2017, 8, 99–107, doi:10.3762/bjnano.8.11

• layers at room temperature and after elevated temperature thermal processing. The molecular homo- and heterostructures were characterized by high-resolution scanning tunneling microscopy (STM) at room temperature and their geometrical arrangement and degree of ordering are compared with the previously

• and further ordered by thermal annealing at 150–200 °C. Although the structure of the thermally annealed CuPc islands could be characterized with low temperature (LT) scanning tunneling microscopy (STM), indicating that the molecules are predominantly upright-oriented, at room temperature, the

• variable temperature (VT) scanning tunneling microscope (STM), an ion gun, an effusion cell manufactured by Kentax GmbH, and a quartz crystal microbalance. The base pressure in the system was kept at 1 × 10−10 mbar. The rutile TiO2(011) samples purchased from MaTeck were prepared in a standard procedure by

Graphene–polymer coating for the realization of strain sensors

• Carmela Bonavolontà,
• Carla Aramo,
• Massimo Valentino,
• Giampiero Pepe,
• Sergio De Nicola,
• Gianfranco Carotenuto,
• Angela Longo,
• Mariano Palomba,
• Simone Boccardi and
• Carosena Meola

Beilstein J. Nanotechnol. 2017, 8, 21–27, doi:10.3762/bjnano.8.3

• to the charge tunneling mechanism occurring between neighboring platelets, and it critically depends on the composition, density and interconnection properties of the graphene components [2]. Polymers have been used as substrates to support strips of strain sensing components to make a flexible

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• 0.5 V. In contrast, sector 2 exhibit different changes in the current with increasing doping level. For a concentration of 1016 cm−3 a change of the transfer mechanism from thermionic to resonant tunneling can be seen at a bias voltage higher than 1.5 V because of field-assisted tunneling [42

• ]. Simultaneously, the width of the potential barrier is decreasing. Therefore, the tunneling probability through the GaAs barrier layer significantly increases. The main mechanism of carrier transport from InAs QDs becomes a tunneling current. As can be seen from Figure 9 the increase in doping concentration of

Solvent-mediated conductance increase of dodecanethiol-stabilized gold nanoparticle monolayers

• Patrick A. Reissner,
• Jean-Nicolas Tisserant,
• Antoni Sánchez-Ferrer,
• Raffaele Mezzenga and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2016, 7, 2057–2064, doi:10.3762/bjnano.7.196

• chains are known to form interdigitated layers revealed by scanning tunneling microscopy [22][23]. Interestingly, the measured decreases in lattice constant after solvent immersion correspond to two and four times the distance between three carbon atoms in an alkyl chain. The conductance, G, of a metal

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• that the diode exhibits almost ideal behavior, implying only a minor occurrence of interface states, generation-recombination, tunneling and even spatial inhomogeneity. The high quality of the graphene surface and the low density of defects promote also the low series resistance of the diode and the

Thickness-modulated tungsten–carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields

• Ismael García Serrano,
• Javier Sesé,
• Isabel Guillamón,
• Hermann Suderow,
• Sebastián Vieira,
• Manuel Ricardo Ibarra and
• José María De Teresa

Beilstein J. Nanotechnol. 2016, 7, 1698–1708, doi:10.3762/bjnano.7.162

• ][14][15][16][17][18][19]. Interestingly, these W–C films are amorphous or nanocrystalline and the intrinsic pinning is low. Even small surface corrugations of just a few percent of the total thickness allow the observation of vortex-lattice matching effects by means of scanning tunneling microscopy

Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

• Austin Deschenes,
• Sadid Muneer,
• Mustafa Akbulut,
• Ali Gokirmak and
• Helena Silva

Beilstein J. Nanotechnol. 2016, 7, 1676–1683, doi:10.3762/bjnano.7.160

• simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the

• tunneling junction. We compare self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum

• , positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ), most of the heat is dissipated on the

Hydrophilic silver nanoparticles with tunable optical properties: application for the detection of heavy metals in water

• Paolo Prosposito,
• Federico Mochi,
• Erica Ciotta,
• Mauro Casalboni,
• Fabio De Matteis,
• Iole Venditti,
• Laura Fontana,
• Giovanna Testa and
• Ilaria Fratoddi

Beilstein J. Nanotechnol. 2016, 7, 1654–1661, doi:10.3762/bjnano.7.157

• ), zeta potential (ζ-potential) measurements and scanning tunneling microscopy (STM). Further, to demonstrate the environmental application of our AgNPs, we also applied them for heavy metal sensing by detecting visible color modification due to SPR spectral changes. We found that these negatively charged

• the Smolukovsky equation [55]. The scanning tunneling microscope (Tops System, WA Technology) consists of a UHV attachment with an antivibration stacking and a piezoelectric tube with 2 mm maximum scanning area for the tip movement. The lateral resolution of the microscope is ±1 Å and the accuracy in

Scanning probe microscopy studies on the adsorption of selected molecular dyes on titania

• Jakub S. Prauzner-Bechcicki,
• Lukasz Zajac,
• Piotr Olszowski,
• Res Jöhr,
• Antoine Hinaut,
• Thilo Glatzel,
• Bartosz Such,
• Ernst Meyer and
• Marek Szymonski

Beilstein J. Nanotechnol. 2016, 7, 1642–1653, doi:10.3762/bjnano.7.156

• dianhydride (PTCDA); phtalocyanines; porphyrins; rutile; scanning probe microscopy; scanning tunneling microscopy (STM); titanium dioxide (TiO2); Introduction Today it comes as no surprise that photovoltaic devices can be made of materials other than silicon. Nanocrystalline materials accompanied by organic

Dynamic of cold-atom tips in anharmonic potentials

• Tobias Menold,
• Peter Federsel,
• Carola Rogulj,
• Hendrik Hölscher,
• József Fortágh and
• Andreas Günther

Beilstein J. Nanotechnol. 2016, 7, 1543–1555, doi:10.3762/bjnano.7.148

• -control. Keywords: anharmonic motion; cold-atom scanning probe microscopy; dephasing; dynamic mode; tip oscillation; Introduction The development of novel scanning probe techniques has lead to tremendous improvements in investigating nanomaterials [1]. Starting with conventional force and tunneling

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

• Ionel Stavarache,
• Valentin Adrian Maraloiu,
• Petronela Prepelita and
• Gheorghe Iordache

Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142

• darkness, the current behavior of the Al/n-Si/Ge:SiO2/ITO structure (schematically presented in Figure 5) is determined by the electrons tunneling from the ITO top electrode into the Ge-nps located in the SiO2 oxide layer and the electron transport in Ge:SiO2 film by a tunneling mechanism between

• neighboring Ge-nps [9][37]. The investigated (Ge-nps):SiO2 system behaves like a resistor network where each Ge-np is connected with its neighboring Ge-nps by a finite tunneling resistor. In this way, the activated carriers in the Ge-nps would tunnel to the nearest Ge-nps, following the path with the lowest

• generated in the Ge-nps and in the Si substrate and they move by tunneling between neighboring Ge-nps. During transport, the positively charged holes are dynamically trapped within the Ge-nps incorporated into SiO2 matrix improving the electron injection, leading to an increase of negative photoconductivity

A composite structure based on reduced graphene oxide and metal oxide nanomaterials for chemical sensors

• Vardan Galstyan,
• Elisabetta Comini,
• Iskandar Kholmanov,
• Andrea Ponzoni,
• Veronica Sberveglieri,
• Nicola Poli,
• Guido Faglia and
• Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2016, 7, 1421–1427, doi:10.3762/bjnano.7.133

• potential barrier for electron tunneling acting as a highly conductive electrical path for the transport of electrons through the nanostructure [34]. Therefore, RGO improves the sensing performance of ZnO. Due to this reason, in our future investigations we will study the sensing properties of the composite

Advanced atomic force microscopy techniques III

• Thilo Glatzel and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2016, 7, 1052–1054, doi:10.3762/bjnano.7.98

• microscopy (AFM) celebrates its 30th anniversary this year. It was presented by Binnig, Quate and Gerber in 1986 as an extension of the scanning tunneling microscope (STM) with the possibility to measure forces as small as 10−18 N [1]. Since then many different variations of the force detection method and

Phenalenyl-based mononuclear dysprosium complexes

• Yanhua Lan,
• Andrea Magri,
• Olaf Fuhr and
• Mario Ruben

Beilstein J. Nanotechnol. 2016, 7, 995–1009, doi:10.3762/bjnano.7.92

• relaxation process to be 43.8 K, and the respective pre-exponential factor τ0 to have a value of 3.3 × 10−6 s. Additionally, a saturation of about 5 × 10−4 s, relative to the quantum-tunneling process, is obtained below 5 K. In relaxation processes of SMMs that are to a certain extent subjected to quantum

• effects, the application of a small dc field can remove the state degeneracy, and accordingly also the probability of quantum tunneling. Aiming to explore the relaxation process and to evaluate the quantum tunneling effect, the frequency dependence of the ac susceptibility was estimated at 1.8 K under a

• suppressed quantum tunneling of the magnetization (QTM) [52]. Lastly, ac susceptibilities as a function of the temperature have been measured under a dc field of 200 Oe to estimate the effective relaxation time (Figure 5). The data were fitted with an Arrhenius law function in the temperature range between