Correction: AFM-IR investigation of thin PECVD SiO_x films on a polypropylene substrate in the surface-sensitive mode

• Hendrik Müller,
• Hartmut Stadler,
• Teresa de los Arcos,
• Adrian Keller and
• Guido Grundmeier

Beilstein J. Nanotechnol. 2025, 16, 252–253, doi:10.3762/bjnano.16.19

Advanced atomic force microscopy techniques V

• Philipp Rahe,
• Ilko Bald,
• Nadine Hauptmann,
• Regina Hoffmann-Vogel,
• Harry Mönig and
• Michael Reichling

Beilstein J. Nanotechnol. 2025, 16, 54–56, doi:10.3762/bjnano.16.6

• characterize SiOx films as thin as 5 nm by the so-called surface-sensitive mode, in contrast to the established contact mode, which provides much less surface sensitivity. A particular strength for the study of materials is the combination of different measurement modes. Rothe et al. extend the

Heterogeneous reactions in a HFCVD reactor: simulation using a 2D model

• Xochitl Aleyda Morán Martínez,
• José Alberto Luna López,
• Zaira Jocelyn Hernández Simón,
• Gabriel Omar Mendoza Conde,
• José Álvaro David Hernández de Luz and
• Godofredo García Salgado

Beilstein J. Nanotechnol. 2024, 15, 1627–1638, doi:10.3762/bjnano.15.128

• for the subsequent growth of the SiOx films. These SiOx films have interesting properties and embedded nanostructures, which make them excellent dielectric, optoelectronic, and electroacoustic materials for the fabrication of devices compatible with silicon-based technology. Keywords: 2D model

• ; chemical reactions; flow dynamics; HFCVD; hot filament chemical vapor deposition; SiOx films; Introduction The growth of materials such as non-stoichiometric silicon oxide (SiOx) is an important step in semiconductor devices development. Control of deposition parameters determines the success of the

• because the input gases and materials are accessible; also, it is scalable to larger areas [6]. The SiOx films obtained by HFCVD possess excellent optical and electrical properties, which makes such films suitable for applications in the manufacture of metal–insulator–semiconductor and metal–insulator

AFM-IR investigation of thin PECVD SiO_x films on a polypropylene substrate in the surface-sensitive mode

• Hendrik Müller,
• Hartmut Stadler,
• Teresa de los Arcos,
• Adrian Keller and
• Guido Grundmeier

Beilstein J. Nanotechnol. 2024, 15, 603–611, doi:10.3762/bjnano.15.51

• Si 2p peaks. The O 1s–Si 2p distance is 429.6 eV for the 50 nm film and 429.9 eV for the 5 nm film. This is in good agreement with values found in the literature for the PECVD deposition of SiOx films from HMDSO/O2/Ar gas mixtures [21]. A comparison of the relative intensities of the O 1s and Si 2p

• the AFM-IR surface-sensitive mode for the investigation of ultra-thin films and the interfaces to the supporting materials. Conclusion The benefits of the surface-sensitive mode in the AFM-IR characterization of thin PECVD SiOx films on polymer substrates were investigated in this study. Our results