Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• Kafi Devi Usha Rani Arun Kumar Divya Gupta Sanjeev Aggarwal Ion Beam Centre, Department of Physics, Kurukshetra University, Kurukshetra-136119, India 10.3762/bjnano.16.25 Abstract In this study, zinc telluride (ZnTe) films were grown on quartz substrates at room temperature, 300 °C, 400 °C, 500

• crystallinity, high transmittance, and high conductivity of the ZnTe film produced at 600 °C make it a suitable candidate for use as a buffer layer in solar cell applications. Keywords: bandgap; physical properties; RF sputtering; substrate temperature; ZnTe; Introduction The industrialization and burning of

• to quantum confinement size effects, metal chalcogenides are of importance in different technological domains. Metal chalcogen compounds are composed of a transition metal with one or more members of the chalcogen family, and they exhibit semiconducting properties. Zinc telluride (ZnTe) is a binary

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• semiconductors and emit from the UV to the red region of the visible spectrum via bandgap tuning (i.e., on alloying with In and Al [5][6][7]). Similarly, other active materials for quantum dot light-emitting diodes (QLED), such as the II–VI semiconductor family include ZnO, CdSe, CdS, CdTe, ZnSe, ZnS, ZnTe, and

Non-equilibrium electron transport induced by terahertz radiation in the topological and trivial phases of Hg_1−xCd_xTe

• Alexandra V. Galeeva,
• Alexey I. Artamkin,
• Alexey S. Kazakov,
• Sergey N. Danilov,
• Sergey A. Dvoretskiy,
• Nikolay N. Mikhailov,
• Ludmila I. Ryabova and
• Dmitry R. Khokhlov

Beilstein J. Nanotechnol. 2018, 9, 1035–1039, doi:10.3762/bjnano.9.96

• synthesized by MBE. ZnTe and CdTe buffer layers, a CdTe-rich mercury cadmium telluride relaxed layer, a 3D Hg1−xCdxTe layer, and a CdTe-rich cap layer were successively grown on a GaAs (013) semi-insulating substrate (see the inset in upper right corner of the Figure 1). The active 3D Hg1−xCdxTe layer

• structure for both solid solutions is shown schematically to the left of the plots. The heterostructure layers are outlined in the right upper corner. The cap and relaxed Hg1−yCdyTe, buffer CdTe and ZnTe layers are indicated by the numbers from 1 to 4, respectively. Dependence of the absolute value of the

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• change of the chemical composition of the contacting materials. Electrical-current-induced thermal effects have been studied in various one-dimensional nanostructures such as Si [92], Ge [10][54], carbon nanotubes (CNTs) [93][94][95], GaN [96][97] and ZnTe [98]. The evolution of a nanocontact between a

Nanostructure-directed chemical sensing: The IHSAB principle and the dynamics of acid/base-interface interaction

• James L. Gole and
• William Laminack

Beilstein J. Nanotechnol. 2013, 4, 20–31, doi:10.3762/bjnano.4.3

• ZnTe) [12] as long as the combined porous nano/microstructure can be generated in these materials. The configuration of Figure 1 can also be reconstructed as a pass-through microporous membrane [13]. This enhances the potential range of interface combinations that can be used to form alternate

Characterization and properties of micro- and nanowires of controlled size, composition, and geometry fabricated by electrodeposition and ion-track technology

• Maria Eugenia Toimil-Molares

Beilstein J. Nanotechnol. 2012, 3, 860–883, doi:10.3762/bjnano.3.97

• the template method in combination with electrodeposition of semiconductor nanowires (such as ZnO, Si, or ZnTe) has been rather limited. Cylindrical ZnO nanowires have been electrochemically grown from aqueous solutions in the pores of both alumina and etched ion-track membranes with a rather limited