Beilstein J. Nanotechnol.2025,16, 910–920, doi:10.3762/bjnano.16.69
conditions, but the deposit has lower Pt content for Cs+. The electrical resistivity of the deposit is found to be higher for Cs+ than for Ga+ and decreasing with increasing acceleration voltage.
Keywords: cesiumionsource; cold atom ion source; focused ion beam (FIB); FIB-induced deposition (FIBID
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Figure 1:
(a) SEM images of Pt deposited with Cs+ ions at 16, 8, 5, and 2 kV on Si. The upper part of the ima...