Focused ion and electron beams for synthesis and characterization of nanomaterials

• Aleksandra Szkudlarek

Beilstein J. Nanotechnol. 2025, 16, 613–616, doi:10.3762/bjnano.16.47

• ], charged particle beams have been instrumental in advancing modern science and technology. These beams are essential for both fabricating and characterizing materials, enabling researchers to probe fundamental properties of matter, investigate atomic-scale processes, and design novel materials with

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• tone resist) or soluble (positive tone resist) in the subsequent development step. The drive to fabricate devices with ever reducing dimensions has meant that alternatives to diffraction-limited photon-based lithography have evolved, using charged particle beams [103]. Electron beam lithography (EBL

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput. Keywords: charged particle beams

• lithography are the leading top-down methods. In this review we focus on another top-down generic technology, namely nanostructuring by charged particle beams used to expose a resist, which can be used as a mask for pattern transfer etching and metal deposition etc. Nanolithography using charged particle

• particle beams and the resolution obtained is set by the scattering of the beam in the resist layer and the underlying substrate. Scattering and range depend upon a combination of electron scattering and nuclear scattering. The latter is of particular importance for heavy ions like Ga+ and causes damage to