Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• , skewness, and kurtosis were determined. Current–voltage characteristics indicate that the conductivity of the films increased with substrate temperature. The observed variations in structural, morphological, and optical parameters have been discussed and correlated. The wide bandgap (3.11 eV), high

Green synthesis of carbon dot structures from Rheum Ribes and Schottky diode fabrication

• Muhammed Taha Durmus and
• Ebru Bozkurt

Beilstein J. Nanotechnol. 2024, 15, 1369–1375, doi:10.3762/bjnano.15.110

• steady-state fluorescence measurements. In the second part of the study, CDs were dripped onto silicon substrates, and a CDs thin film was formed by evaporation. A diode structure was obtained by evaporating gold with the shadow mask technique on the CDs film, and the current–voltage characteristics of

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• obtained by conducting UPS analysis, and then the energy graph of the solar cell was built. Impedance spectroscopy results showed increased conductivity of the active layer upon doping with quantum dots. Current–voltage characteristics and standard parameters of photovoltaic cells were simulated for two

• solar cells. Current–voltage characteristics for (a) ITO/active layer/Al and (b) ITO/PEDOT:PSS/P3HT:PCBM:QD/aluminium bulk heterojunctions cells. Designations of the nanodots used in the system. Refractive indices and extinction coefficient parameters for investigated quantum dots thin films. Roughness

Spatial variations of conductivity of self-assembled monolayers of dodecanethiol on Au/mica and Au/Si substrates

• Julian Skolaut,
• Jędrzej Tepper,
• Federica Galli,
• Wulf Wulfhekel and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2023, 14, 1169–1177, doi:10.3762/bjnano.14.97

• SAM by the tip during imaging. Studies of the extent and type presented here can be used as the basis for well-founded statements concerning electronic properties such as the current–voltage characteristics of the molecular SAM. To this purpose, the characteristics should only be averaged over

A distributed active patch antenna model of a Josephson oscillator

• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2023, 14, 151–164, doi:10.3762/bjnano.14.16

• , connected by the transmission line impedance ZTL. (a) Simulated current–voltage characteristics of a junction with L = 5λJ, Φ/Φ0 = 5 and α = 0.1. Blue symbols represent the full numeric solution of the sine-Gordon equation (up and down current sweep). The red line represents the approximate (perturbative

Frontiers of nanoelectronics: intrinsic Josephson effect and prospects of superconducting spintronics

• Anatolie S. Sidorenko,
• Horst Hahn and
• Vladimir Krasnov

Beilstein J. Nanotechnol. 2023, 14, 79–82, doi:10.3762/bjnano.14.9

• magnetic proximity effect at a ferromagnetic–insulator–superconductor (FIS) interface was investigated through combined experimental and theoretical work [25]. Manifestations of nonlinear features in magnetic dynamics and current–voltage characteristics of the 0 Josephson junction in superconductor

Observation of collective excitation of surface plasmon resonances in large Josephson junction arrays

• Roger Cattaneo,
• Mikhail A. Galin and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2022, 13, 1578–1588, doi:10.3762/bjnano.13.132

• formation of standing waves at the electrode/substrate interface. We observe that resonant steps in the current–voltage characteristics appear above some threshold number of junctions, Nth ≈ 100, and then progressively enhance in amplitude with further increment of the number of junctions in the resistive

Induced electric conductivity in organic polymers

• Konstantin Y. Arutyunov,
• Anatoli S. Gurski,
• Vladimir V. Artemov,
• Alexander L. Vasiliev,
• Azat R. Yusupov,
• Danfis D. Karamov and
• Alexei N. Lachinov

Beilstein J. Nanotechnol. 2022, 13, 1551–1557, doi:10.3762/bjnano.13.128

• mechanical stress is applied. In this work, the transport properties of thin-film layered lead–PDP–lead structures were experimentally studied in a wide temperature range. At sufficiently high temperatures, the current voltage characteristics are satisfactorily described in terms of the injection model of

• that in the measured Pb–PDP–Pb structure, the shape of the current–voltage characteristics strongly depends on temperature. At 300 K the I–V dependencies have a nonlinear character j ≈ kUn, typical for organic dielectrics. At temperatures ≈77 K and below, the dependence j = f(U) is also nonlinear, but

• described in terms of the injection current model limited by the space charge. At low temperatures, the tunneling mechanism is the predominant mechanism. Figure 3 shows the current–voltage characteristics of Pb–PDP–Pb structures with different PDP film thicknesses. With increase of the polymer film

Density of states in the presence of spin-dependent scattering in SF bilayers: a numerical and analytical approach

• Tairzhan Karabassov,
• Valeriia D. Pashkovskaia,
• Nikita A. Parkhomenko,
• Anastasia V. Guravova,
• Elena A. Kazakova,
• Boris G. Lvov,
• Alexander A. Golubov and
• Andrey S. Vasenko

Beilstein J. Nanotechnol. 2022, 13, 1418–1431, doi:10.3762/bjnano.13.117

• spin–orbit scattering on the DOS behavior. Then, we provide a comparison with the exact numerical calculation using a self-consistent two-step iterative method. Furthermore, we briefly discuss the consequences of the different kinds of scattering on the current–voltage characteristics in SFIFS

• features is the examination of the current–voltage characteristics. Utilizing the Werthamer expression for the quasiparticle current in tunneling junctions, we can calculate the I–V curves for an SFIFS junction. The current then reads Here, Nf1,2(E) is the density of states (DOS) in the corresponding

• influence on the current. Figure 8 demonstrates the current–voltage characteristics of the SFIFS junction calculated in the presence of parallel magnetic (Figure 8a), spin–orbit (Figure 8b), and perpendicular magnetic scattering (Figure 8c). From the plots, we can notice that while a magnetic scattering

Efficiency of electron cooling in cold-electron bolometers with traps

• Dmitrii A. Pimanov,
• Vladimir A. Frost,
• Anton V. Blagodatkin,
• Anna V. Gordeeva,
• Andrey L. Pankratov and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 896–901, doi:10.3762/bjnano.13.80

• the measured bolometric structure. After the program run, we get the fitted current–voltage characteristics in a numerical form, as well as a set of all parameters that gives the best solution of the equations. In this way, we can determine the parameters of Andreev current and leakage current, as

• as in [7]. The current–voltage characteristics of this sample were measured in a Triton 200 dilution cryostat at different phonon temperatures from 100 to 300 mK. According to these characteristics, the electron temperature, as well as the contribution of Andreev and leakage currents, were determined

• with the use of the heat balance equation (Equation 1). The theoretical current–voltage characteristics show good matching with the experimental ones, as it can be seen in Figure 1a. In Figure 1b we show the plots of differential resistances to demonstrate that the fit agrees well not only for the

Approaching microwave photon sensitivity with Al Josephson junctions

• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Leonid S. Revin,
• Dmitry A. Ladeynov,
• Anton A. Yablokov and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 582–589, doi:10.3762/bjnano.13.50

• , used before for terahertz receiver applications [27][28], in Figure 2a one can see a typical current–voltage characteristics (IVC) with the critical current close to the theoretical value [29]. Besides, a subgap structure is visible at the inverse branch of the IVC. Such a structure with peculiarities

• (assuming front smoothing due to twisted pairs) and voltage across the JJ. (a) The current–voltage characteristics of the Josephson junction with Ic = 8.6 μA at 50 mK. The red point indicates the state of JJ in a “waiting” mode, the arrow shows a jump to the resistive state after absorption of photons. (b

A chemiresistive sensor array based on polyaniline nanocomposites and machine learning classification

• Jiri Kroutil,
• Alexandr Laposa,
• Ali Ahmad,
• Jan Voves,
• Vojtech Povolny,
• Ladislav Klimsa,
• Marina Davydova and
• Miroslav Husak

Beilstein J. Nanotechnol. 2022, 13, 411–423, doi:10.3762/bjnano.13.34

• the PANI. Current–voltage characteristics of active layers. Temperature dependence characteristics of active layers. Schematic diagram of the gas sensing characterizations apparatus. Gas characterization of active layers towards (a) 25 ppm of NH3, (b) 25 ppm of NO2, (c) 25 ppm of CO, (d) 250 ppm of

• +, characteristic band of the polaron radical cation); (6) 1412 cm−1 (phenazine structures); (7) 1498 cm−1 (C=N of the quinoid nonprotonated diimine units); (8) 1590 cm−1 (C=C stretching vibration of the quinonoid ring) [16][17]. Current–voltage and temperature analysis Figure 3 shows current–voltage

• characteristics of active layers. These characteristics were examined for currents up to 200 mA and exhibit an almost linear character. Figure 4 shows the temperature dependence of the relative resistance of PANI/nanocomposite layers for different temperatures. All layers exhibit a decrease in resistance with

A broadband detector based on series YBCO grain boundary Josephson junctions

• Egor I. Glushkov,
• Alexander V. Chiginev,
• Leonid S. Kuzmin and
• Leonid S. Revin

Beilstein J. Nanotechnol. 2022, 13, 325–333, doi:10.3762/bjnano.13.27

• (Z) = RL, dIm(Z)/dω = 2LL, and . For the serial resonance at 250 GHz, RL = 43 Ω, LL = 500 pH, and CL = 0.8 fF. Figure 5, right, shows the current–voltage characteristics (IVCs) of a single junction with the antenna under the influence of an external signal. A bias current regime with the optimum

• . Figure 7a shows the current–voltage characteristics for a signal power level PMW = 3 μW and different numbers of junctions in series. With an increase in the number of junctions, the Shapiro steps are blurred. This is due to an increase in the spread of the amplitudes Ai in different junctions according

• schematic of JJs in a series array interacting via a common RLC load. Right: current–voltage characteristics of a single junction in the absence and under the influence of an external 250 GHz signal, from bottom to top: PMW = 250, 50, and 0 nW. The dotted line is the optimal bias current. (a) Response ΔV

Design aspects of Bi₂Sr₂CaCu₂O_8+δ THz sources: optimization of thermal and radiative properties

• Mikhail M. Krasnov,
• Natalia D. Novikova,
• Roger Cattaneo,
• Alexey A. Kalenyuk and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 1392–1403, doi:10.3762/bjnano.12.103

• of both devices. Current–voltage characteristics of mesa structures on (a) whisker- and (b) crystal-based devices. (c, d) On-chip generation–detection experiment for (c) whisker- and (d) crystal-based devices. Here, the ac resistance of the detector mesa is shown as function of the total dc

Nonmonotonous temperature dependence of Shapiro steps in YBCO grain boundary junctions

• Leonid S. Revin,
• Dmitriy V. Masterov,
• Alexey E. Parafin,
• Sergey A. Pavlov and
• Andrey L. Pankratov

Beilstein J. Nanotechnol. 2021, 12, 1279–1285, doi:10.3762/bjnano.12.95

• depends on the characteristic frequency ωc = 2eIcRN/ℏ of the JJ. Results First, the current–voltage characteristics (IVCs) were measured, and the value of the critical current as a function of temperature was found, see Figure 1. The Ic(T) dependence is similar to the experimental observations for other

In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures

• Olena M. Kapran,
• Roman Morari,
• Taras Golod,
• Evgenii A. Borodianskyi,
• Vladimir Boian,
• Andrei Prepelita,
• Nikolay Klenov,
• Anatoli S. Sidorenko and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 913–923, doi:10.3762/bjnano.12.68

• ) transition occurs with Tc(S) = 8 K and T′c(S′) = 7.8 K and the shape of Rxx(T) remains the same. This indicates that the current–voltage characteristics at low bias are almost linear and resistance is almost bias-independent. However, at high bias, Iac = 500 μA, Rxx(T) is significantly smeared out and the

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• solar cells. Figure 5b presents the current–voltage characteristics of the textured and planar ZnO/Si solar cells. Both types of the samples were investigated under standard test conditions (100 mW·cm−2, AM 1.5G, 25 °C). A better performance was observed for sample A. Short-circuit current values were

• (a, c) textured and (b, d) planar solar cells studied by SEM (top row) and AFM (bottom row). (a) External quantum efficiency and (b) current voltage characteristics of ZnO/Si solar cells. Current–voltage–temperature characteristics of (a) textured and (b) planar ZnO/Si solar cells. Temperature

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

• Piotr Caban,
• Rafał Pietruszka,
• Jarosław Kaszewski,
• Monika Ożga,
• Bartłomiej S. Witkowski,
• Krzysztof Kopalko,
• Piotr Kuźmiuk,
• Katarzyna Gwóźdź,
• Ewa Płaczek-Popko,
• Krystyna Lawniczak-Jablonska and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

• sample. Current–voltage characteristics Current–voltage characteristics are presented in Figure 9 for the samples A1–A4 (Figure 9a) and B1–B4 (Figure 9b). The corresponding values of PV parameters were collected in Table 4. First it can be noticed that the values of current density for particular samples

Absorption and photoconductivity spectra of amorphous multilayer structures

• Oxana Iaseniuc and
• Mihail Iovu

Beilstein J. Nanotechnol. 2020, 11, 1757–1763, doi:10.3762/bjnano.11.158

• : Ge0.09As0.09Se0.82, 3: As0.40S0.30Se0.30, 4: As0.40S0.30Se0.30/Ge0.09As0.09Se0.82/Ge0.30As0.04S0.66). Current–voltage characteristics of the amorphous thin-film HS with a positive voltage applied to the top Al electrode, in the dark (1) and under illumination (2). Current–voltage characteristics of the amorphous

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• monodisperse Ag2S NPs when using the CTAB surfactant. The optoelectronic properties of α-Ag2S/p-Si photodetector, such as current–voltage characteristics and responsivity in the dark and under illumination, were also improved after using the CTAB surfactant. The responsivity of the photodetector increases from

Excitonic and electronic transitions in Me–Sb₂Se₃ structures

• Nicolae N. Syrbu,
• Victor V. Zalamai,
• Ivan G. Stamov and
• Stepan I. Beril

Beilstein J. Nanotechnol. 2020, 11, 1045–1053, doi:10.3762/bjnano.11.89

• (In–Sb2Se3) contacts, the structures were obtained by either thermal sputtering under vacuum or electrochemical deposition onto the cleaved faces of single crystals (Figure 3A). Current–voltage characteristics suggest that the contacts have an ohmic behavior. The impedance has a frequency dependence

A new photodetector structure based on graphene nanomeshes: an ab initio study

• Babak Sakkaki,
• Hassan Rasooli Saghai,
• Ghafar Darvish and
• Mehdi Khatir

Beilstein J. Nanotechnol. 2020, 11, 1036–1044, doi:10.3762/bjnano.11.88

• electronic and optical characteristics of various GNM structures. To investigate the device-level properties of GNMs, their current–voltage characteristics are explored by DFT-based tight-binding (DFTB) in combination with non-equilibrium Green’s function (NEGF) methods. Band structure analysis shows that

• the current transport in the device channel. The effect of the finite bias voltage on the channel potential is calculated using the Poisson equation with the NEGF method. Figure 4 shows the current–voltage characteristics of the three types of studied devices. Figure 4a shows that 6-AGNR and 7-AGNR

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• light. The current–voltage characteristics measured with and without illumination reveal a good ohmic quality of the prepared Cr/Au contacts (Figure 8). Therefore, one can conclude that the detector works in the photoconductor mode. The responsivity of the detector is defined as where Iphoto is the

• in (A) shows a photo of five contacted GaAs nanowires on the same glass substrate. (B) Photocurrent build-up and relaxation of the photodetector measured for an IR illumination density of 800 mW·cm−2. Current–voltage characteristics measured in dark (curve 1) and under IR illumination with power

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• contact on the p-type Si substrate. Figure 9 and Figure 10 compare the current–voltage characteristics of p-Si/n-Zn1−xMgxO heterojunctions for two films deposited by spin coating with x values of 0.10 (Figure 9) and 0.40 (Figure 10). One can see from Figure 9b and Figure 10b that in both cases the current

• , the investigated heterojunctions work as photodetectors at forward bias, while a classical p–n junction should function as a photodetector at reverse bias. Since the current–voltage characteristics are fit to straight lines in the log–log coordinates, it means that they correspond to a power function

• heterojunction with a Zn0.6Mg0.4O film, the current–voltage characteristics fit to the MG law both in the dark and under illumination (see Figure 10c). These observations suggest that the investigated heterojunctions work at forward bias as injection photodiodes [53][54]. A more detailed investigation of

A Josephson junction based on a highly disordered superconductor/low-resistivity normal metal bilayer

• Pavel M. Marychev and
• Denis Yu. Vodolazov

Beilstein J. Nanotechnol. 2020, 11, 858–865, doi:10.3762/bjnano.11.71

• of a single S layer at zero temperature). Our calculations show, that the proper choice of the thickness of the N layer leads both to nonhysteretic current–voltage characteristics even at low temperatures and a relatively large product IcRn. Keywords: normal metal–superconductor bilayer; Josephson

• in the current–voltage characteristics is important for devices based on Josephson junctions. The hysteresis in Dayem bridge, variable-thickness, S’-S-S’ or S-N-S junctions is mainly caused by the temperature rise in the weak-link region in the resistive state due to Joule heating and the formation

• voltage standards [1], where a large value of Vc allows for a reduction of the number of junctions and for the use of Shapiro steps of orders higher than one. Nonhysteretic current–voltage characteristics with large Vc at low temperatures allow for the use of these structures for various low-temperature